MMSF60R190Q MGCHIP | Alldatasheet
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Technical content
May. 2021. Revision 1.3 Magnachip Semiconductor Ltd. 1 Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 0.19 Ω VTH,typ 3 V ID 20 A Qg,typ 36 nC Order Code Marking Temp. Range Package Packing RoHS Status MMSF60R190QTH 60R190QS -55 ~ 150℃ TO-220SF Tube Halogen Free Features Low Power Loss by High Speed Switching and Low On-Resistance 100% Avalanche Tested Green Package – Pb Free Plating, Halogen Free Applications PFC Power Supply Stages Switching Applications Adapter MMSF60R190Q 600V 0.19Ω N-channel MOSFET Description MMSF60R190Q is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss. Key Parameters Ordering Information Package & Internal Circuit G D S G D S
May. 2021. Revision 1.3 Magnachip Semiconductor Ltd. 2 Parameter Symbol Rating Unit Note Drain – Source voltage VDSS 600 V Gate – Source voltage VGSS ±30 V Continuous drain current(1) ID
20 A TC = 25℃
13 A TC = 100℃
Pulsed drain current(2) IDM 60 A Power dissipation PD 33 W Single - pulse avalanche energy EAS 420 mJ MOSFET dv/dt ruggedness dv/dt 50 V/ns Diode dv/dt ruggedness(3) dv/dt 15 V/ns Storage temperature Tstg -55 ~150 ℃ Maximum operating junction temperature Tj 150 ℃ 1) Id limited by maximum junction temperature 2) Pulse width tP limited by Tj,max 3) ISD ≤ ID, VDS peak ≤ V(BR)DSS Parameter Symbol Value Unit Thermal resistance, junction-case max Rthjc 3.75 ℃/W Thermal resistance, junction-ambient max Rthja 75 ℃/W Thermal Characteristics Absolute Maximum Rating (Tc=25℃ unless otherwise specified)
May. 2021. Revision 1.3 Magnachip Semiconductor Ltd. 3 Parameter Symbol Min. Typ. Max. Unit Test Condition Drain – Source Breakdown voltage V(BR)DSS 600 - - V VGS = 0V, ID = 0.25mA Gate Threshold Voltage VGS(th) 2 3 4 V VDS = VGS, ID = 0.25mA Zero Gate Voltage Drain Current IDSS - - 1 μA VDS = 600V, VGS = 0V Gate Leakage Current IGSS - - 100 nA VGS = ±30V, VDS = 0V Drain-Source On State Resistance RDS(ON) - 0.17 0.19 Ω VGS = 10V, ID = 9.5A Parameter Symbol Min. Typ. Max. Unit Test Condition Input Capacitance Ciss - 1336 - pF VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 1352 - Reverse Transfer Capacitance Crss - 52 - Effective Output Capacitance Energy Related (4) Co(er) - 39 - VDS = 0V to 480V, VGS = 0V, f = 1.0MHz Turn On Delay Time td(on) - 24 - ns VGS = 10V, RG = 25Ω, VDS = 300V, ID = 20A Rise Time tr - 89 - Turn Off Delay Time td(off) - 212 - Fall Time tf - 68 - Total Gate Charge Qg - 36 - nC VGS = 10V, VDS = 480V, ID = 20A Gate – Source Charge Qgs - 9 - Gate – Drain Charge Qgd - 14 - Gate Resistance RG - 8 - Ω VGS = 0V, f = 1.0MHz 4) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS Static Characteristics (Tc=25℃ unless otherwise specified) Dynamic Characteristics (Tc=25℃ unless otherwise specified)
May. 2021. Revision 1.3 Magnachip Semiconductor Ltd. 4 Parameter Symbol Min. Typ. Max. Unit Test Condition Continuous Diode Forward Current ISD - - 20 A Pulsed Diode Forward Current(2) ISD,pulse - - 60 A Diode Forward Voltage VSD - - 1.4 V ISD = 20A, VGS = 0V Reverse Recovery Time trr - 347 - ns ISD = 20A di/dt = 100A/μs VDD = 100V Reverse Recovery Charge Qrr - 5.3 - μC Reverse Recovery Current Irrm - 30.5 - A Reverse Diode Characteristics (Tc=25℃ unless otherwise specified)
May. 2021. Revision 1.3 Magnachip Semiconductor Ltd. 5 Characteristic Graph
May. 2021. Revision 1.3 Magnachip Semiconductor Ltd. 6
May. 2021. Revision 1.3 Magnachip Semiconductor Ltd. 7
May. 2021. Revision 1.3 Magnachip Semiconductor Ltd. 8 Test Circuit
May. 2021. Revision 1.3 Magnachip Semiconductor Ltd. 9 Physical Dimension TO-220SF(3L) Note : Package body size, length and width do not include mold flash, protrusions and gate burrs.
May. 2021. Revision 1.3 Magnachip Semiconductor Ltd. 10 DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. Magnachip reserves the right to change the specifications and circuitry without notice at any time. Magnachip does not consider responsibility for use of any circuitry other than circuitry entirely included in a Magnachip product. is a registered tradema rk of Magnachip Semiconductor Ltd.