MMSF5P02HD MOTOROLA | Alldatasheet

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1Motorola TMOS Power MOSFET Transistor Device Data /C0068/C0101/C0115/C0105/C0103/C0110/C0101/C0114/C0039/C0115 /C0068/C0097/C0116/C0097 /C0083/C0104/C0101/C0101/C0116 Medium Power Surface Mount Products /C0084/C0077/C0079/C0083 /C0083/C0105/C0110/C0103/C0108/C0101 /C0080/C0045/C0067/C0104/C0097/C0110/C0110/C0101/C0108 /C0070/C0105/C0101/C0108/C0100 /C0069/C0102/C0102/C0101/C0099/C0116 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114/C0115 MiniMOS  devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

  • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
  • Logic Level Gate Drive — Can Be Driven by Logic ICs
  • Miniature SO–8 Surface Mount Package — Saves Board Space
  • Diode Is Characterized for Use In Bridge Circuits
  • Diode Exhibits High Speed, With Soft Recovery
  • IDSS Specified at Elevated Temperature
  • Avalanche Energy Specified
  • Mounting Information for SO–8 Package Provided DEVICE MARKING ORDERING INFORMATION S5P02H Device Reel Size Tape Width Quantity S5P02H MMSF5P02HDR2 13″ 12 mm embossed tape 4000 units Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Preferred devices are Motorola recommended choices for future use and best overall value. Order this document by MMSF5P02HD/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA  Motorola, Inc. 1997 CASE 751–05, Style 13 SO–8 /C0077/C0077/C0083/C0070/C0053/C0080/C0048/C0050/C0072/C0068 SINGLE TMOS POWER MOSFET

8.7 AMPERES

20 VOLTS

R DS(on) = 0.03 OHM Motorola Preferred Device Source 1 Top View Source Source Gate Drain Drain Drain Drain D S G REV 2

/C0077/C0077/C0083/C0070/C0053/C0080/C0048/C0050/C0072/C0068

2 Motorola TMOS Power MOSFET Transistor Device Data

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Negative sign for P–Channel devices omitted for clarity Rating Symbol Max Unit Drain–to–Source Voltage VDSS 20 V Drain–to–Gate Voltage (RGS = 1.0 MΩ ) VDGR 20 V Gate–to–Source Voltage — Continuous VGS ± 8.0 V 1 inch SQ. FR–4 or G–10 PCB 10 seconds Thermal Resistance — Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current — Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (1) R THJA PD ID ID IDM 2.5 8.7 7.0 43.5 °C/W Watts mW/ °C A A A Minimum FR–4 or G–10 PCB 10 seconds Thermal Resistance — Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current — Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (1) R THJA PD ID ID IDM 1.56 12.5 6.9 5.5 °C/W Watts mW/ °C A A A Operating and Storage Temperature Range TJ, Tstg – 55 to 150 °C Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 20 Vdc, VGS = 4.5 Vdc, Peak IL = 19 Apk, L = 5.5 mH, RG = 25 /C0087) EAS 1000 mJ (1) Repetitive rating; pulse width limited by maximum junction temperature.

/C0077/C0077/C0083/C0070/C0053/C0080/C0048/C0050/C0072/C0068 3Motorola TMOS Power MOSFET Transistor Device Data ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (Cpk ≥ 2.0) (1) (3) (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) V(BR)DSS Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS 1.0 µAdc Gate–Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0) IGSS — — 100 nAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (Cpk ≥ 2.0) (1) (3) (VDS = VGS , ID = 0.25 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) 0.7 0.9 2.6 1.4 Vdc mV/°C Static Drain–to–Source On–Resistance (Cpk ≥ 2.0) (1) (3) (VGS = 4.5 Vdc, ID = 6.4 Adc) (VGS = 2.5 Vdc, ID = 5.1 Adc) R DS(on) m Ω On–State Drain Current (VDS ≤ 5.0 V, VGS = 4.5 V) (VDS ≤ 5.0 V, VGS = 2.5 V) ID(on) 5.0 A Forward Transconductance (VDS = 9.0 Vdc, ID = 6.4 Adc) (1) gFS 14 18 — Mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 16 Vdc V 0 Vdc C iss — 1400 1960 pF Output Capacitance (VDS = 16 Vdc, VGS = 0 Vdc, f = 1.0 MHz) C oss — 925 1300 Transfer Capacitance f = 1.0 MHz) C rss — 370 520 SWITCHING CHARACTERISTICS (2) Turn–On Delay Time (V 6 0 Vd I 1 0 Ad td(on) — 19 40 ns Rise Time (VDD = 6.0 Vdc, ID = 1.0 Adc, VGS =45V d c tr — 28 55 Turn–Off Delay Time VGS = 4.5 Vdc, R G = 6.0 Ω ) (1) td(off) — 130 200 Fall Time G )( ) tf — 90 150 Gate Charge See Figure 8 (V 6 0 Vd I 6 4 Ad Q T — 27.3 38 nC See Figure 8 (VDS = 6.0 Vdc, ID = 6.4 Adc, Q 1 — 3.4 —( DS , D , VGS = 4.5 Vdc) (1) Q 2 — 12 — Q 3 — 8.0 — SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage(1) (IS = 2.5 Adc, VGS = 0 Vdc) (1) (IS = 2.5 Adc, VGS = 0 Vdc, TJ = 125°C) VSD 0.77 0.6 1.2 Vdc Reverse Recovery Time See Figure 15 (I 2 5 Ad V 0 Vd trr — 95 180 ns See Figure 15 (IS = 2.5 Adc, VGS = 0 Vdc, ta — 35 —(S , GS , dIS/dt = 100 A/µs) (1) tb — 60 — Reverse Recovery Stored Charge Q RR — 0.151 — µC (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. (3) Reflects typical values. C pk = Max limit – Typ 3 x SIGMA (4) Repetitive rating; pulse width limited by maximum junction temperature.

4 Motorola TMOS Power MOSFET Transistor Device Data

Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics Figure 3. On–Resistance versus Drain Current Figure 4. On–Resistance versus Drain Current Figure 5. On–Resistance Variation with Figure 6. Drain–to–Source Leakage Current

by recognizing that the power MOSFET is charge controlled. by current from the generator. and Q2 and VGSP are read from the gate charge curve. on–state when calculating td(off). voltage at the source which reduces the gate drive current. tion of drain current, the mathematical solution is complex. sure and, consequently, is not specified. Figure 7. Capacitance Variation

6 Motorola TMOS Power MOSFET Transistor Device Data

Figure 8. Gate–to–Source and Figure 9. Resistive Switching Time Variation switching losses, radiated noise, EMI and RFI. teristic and is usually the culprit that induces current ringing. Figure 10. Diode Forward Voltage versus

8 Motorola TMOS Power MOSFET Transistor Device Data

Figure 14. Thermal Response Figure 15. Diode Reverse Recovery Waveform

/C0077/C0077/C0083/C0070/C0053/C0080/C0048/C0050/C0072/C0068 9Motorola TMOS Power MOSFET Transistor Device Data INFORMATION FOR USING THE SO–8 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self–align when subjected to a solder reflow process. mm inches 0.060 1.52 0.275 7.0 0.024 0.6 0.050 1.270 0.155 4.0 SO–8 POWER DISSIPATION The power dissipation of the SO–8 is a function of the input pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet for the SO–8 package, PD can be calculated as follows: PD = TJ(max) – TA R θJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 1.6 Watts. PD = 150°C – 25°C 80°C/W = 1.6 Watts The 80 °C/W for the SO–8 package assumes the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 1.6 Watts using the footprint shown. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad . Using board material such as Thermal Clad, the power dissipation can be doubled using the same footprint. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected.

  • Always preheat the device.
  • The delta temperature between the preheat and soldering should be 100°C or less.*
  • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C.
  • The soldering temperature and time shall not exceed 260°C for more than 10 seconds.
  • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less.
  • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress.
  • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.

10 Motorola TMOS Power MOSFET Transistor Device Data

vary among soldering systems, but it is a good starting point. efficiently, then distributes this energy to the components. up to 30 degrees cooler than the adjacent solder joints.

40 TO 80 SECONDS

Figure 16. Typical Solder Heating Profile

/C0077/C0077/C0083/C0070/C0053/C0080/C0048/C0050/C0072/C0068 11Motorola TMOS Power MOSFET Transistor Device Data PACKAGE DIMENSIONS STYLE 13: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN CASE 751–05 SO–8 ISSUE P SEATING PLANE C K 4X P A0.25 (0.010)M TB SS 0.25 (0.010)M B M 8X D R M J X 45 /C0095 /C0095 F –A– –B– –T– DIM MIN MAX MILLIMETERS A 4.80 5.00 B 3.80 4.00 C 1.35 1.75 D 0.35 0.49 F 0.40 1.25 G 1.27 BSC J 0.18 0.25 K 0.10 0.25 M 0 7 P 5.80 6.20 R 0.25 0.50 /C0095/C0095 G NOTES: 1. DIMENSIONS A AND B ARE DATUMS AND T IS A DATUM SURFACE. 2. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 3. DIMENSIONS ARE IN MILLIMETER. 4. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 6. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.

/C0077/C0077/C0083/C0070/C0053/C0080/C0048/C0050/C0072/C0068

12 Motorola TMOS Power MOSFET Transistor Device Data

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;JAPAN : Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315 – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET : http://www.mot.com/SPS/ MMSF5P02HD/D◊