MMSF4P01HDR2G VBSEMI | Alldatasheet

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Technical content

P-Channel 12-V (D-S) MOSFET

FEATURES

  • Halogen-free According to IEC 61249 -2-21 Definition  TrenchFET ® Power MOSFET  Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

 Load Switch  B attery Switch PRODUCT SUMMARY VDS (V) RDS(on) (Ω)I D (A) - 12 0.0050 at VGS = - 4.5 V - 16 0.0065 at VGS = - 2.5 V - 15 0.0100 at VGS = - 1.8 V - 13 S D S D S D G D SO-8 T op V i e w S G D P-Channel MOSFET Notes: a. Surface Mounted on 1" x 1" FR4 board. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s S teady State Unit Drain-Source Voltage VDS - 12 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C ID - 16 - 10 A TA = 70 °C - 11.5 - 8 Pulsed Drai n Current IDM - 50 Continuous Source Current (Diode Conduction)a IS - 2.7 - 1.36 Max imum Power Dissipationa TA = 25 °C PD 3.0 1.5 WTA = 70 °C 1.9 0.95 Operating J unction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symb ol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 10 s RthJA 33 42 °C/WSteady State 70 84 Maximum J unction-to-Foot (Drain) Steady State RthJF 16 21 MMSF4P01HDR2G E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

Notes: Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond t hose listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C unless otherwise noted SPECIFICATIONS TJ = 25 °C, un less otherwise noted Parameter Symb ol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 600 µA - 0.5 - 1.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 n A Z ero Gate Voltage Drain Current IDSS VDS = - 12 V, VGS = 0 V - 1 µAVDS = - 12 V, VGS = 0 V, TJ = 70 °C - 10 On-State Drain Currenta ID(on) V DS = - 5 V, VGS = - 4.5 V - 30 A Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 14 A 0.0050 ΩVGS = - 2.5 V, ID = - 13 A 0.0065 VGS = - 1.8 V, ID = - 12 A 0.0100 Forward Tra nsconductancea gfs VDS = - 6 V, ID = - 14 A 80 S Diode Forwar d Voltagea VSD IS = - 2.7 A, VGS = 0 V - 0.6 - 1.1 V Dynamicb Total Gate Charge Qg VDS = - 6 V, VGS = - 5 V, ID = - 14 A 110 165 nCGate-Sou rce Charge Qgs 15 Gate-Drain Charg e Qgd 27.5 Tur n-O n Delay Time td(on) VDD = - 6 V, RL = 6 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω 110 170 ns Rise Time tr 235 350 Turn -Off Delay Time td(off) 410 620 Fall Time tf 285 430 Gate Re sistance Rg 3.6 Ω Source-Drain Reve rse Recovery Time trr IF = - 2.1 A, dI/dt = 100 A/µs 180 270 ns Output Characteristics 012345 VGS = 5 thru 2 V VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D 1.5 V Transfer Ch aracteristics 1.25 1.50 1.75 TC = 125 °C - 55 °C 25 °C VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D MMSF4P01HDR2G E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

STICS 25 °C unless otherwise noted On-Resistance vs. Drain Curren t Gate Charge Source-Drain Diode Forward Voltage - On-Resistance (Ω)RDS(on) 0.000 0.003 0.006 0.009 0.012 0.015 0 8 16 24 32 ID - Drain Current (A) VGS = 1.8 V VGS = 4.5 V VGS = 2.5 V 0 26 52 78 104 130 VDS = 6 V ID = 14 A - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) V GS 1.0 1.2 TJ = 25 °C 0.1 VSD - Source-to-Drain Voltage (V) - Source Current (A)I S TJ = 150 °C Capacitance On-Resistance vs. Jun ction Temperature On-Resistance vs. Gate-to-Source Voltage 2000 4000 6000 8000 10000 12000 02468 1 0 1 2 VDS - Drain-to-Source Voltage (V) Crss Coss Ciss C - Capacitance (pF) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 VGS = 4.5 V ID = 14 A TJ - Junction Temper ature (°C) (Normalized) - On-ResistanceRDS(on) 0.000 0.006 0.012 0.018 0.024 0.030 8.0 ID = 14 A - On-Resistance (Ω)RDS(on) VGS - Gate-to-Source Voltage (V) MMSF4P01HDR2G E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C unless otherwise noted Threshold Voltage - 0.4 - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 ID = 600 µA Variance (V)VGS(th) TJ - Temperature (°C) Single Pulse Power, Ju nction-to-Ambient 100 Power (W) Time (s) 0.1 1010.010.001 Safe Operating Area, Jun ction-to-Case 100 0.1 1 10 100 0.1 100 ms

0.1 TC = 25 °C

Limited by RDS(on)* VDS - Drain-to-Source Voltage (V) * VDS > minimum VGS at which RDS(on) is specified ID - Drain Current (A) Normalized Thermal Trans ient Impedance, Junction-to-Ambient 10-3 10-2 1 10 60010-110-4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective T ransient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 70 °C/W 3. TJM - T A = PDMZthJA(t) Notes: 4. Surface Mounted PDM MMSF4P01HDR2G E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

STICS 25 °C unless otherwise noted Normalized Th ermal Transient Impedance, Junction-to-Foot 10-3 10-2 11 010-110-4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective T ransient Thermal Impedance MMSF4P01HDR2G E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. MMSF4P01HDR2G E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com