MMSF3P02HDR2G VBSEMI | Alldatasheet

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P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω)I D (A) Q g (Typ.) - 20 0.015 at VGS = - 4.5 V - a 20 nC0.026 at VGS = - 2.5 V - a 0.065 at VGS = - 1.8 V - 8 Notes: a. Package limited. b. Surface Mounted on 1" x 1 " FR4 board. c. t = 5 s. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under Steady State conditions is 80 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, un less otherwise noted Parameter Symbol Limit U nit Drain-Source Voltage VDS - 20 VGate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID a A TC = 70 °C - a TA = 25 °C - b, c TA = 70 °C - .1 b, c Pulsed Drain Current IDM - 50 Continuous Source-Drain Diode Curren t TC = 25 °C IS - 6a TA = 25 °C - 2.9b, c Maximum Po wer Dissipation TC = 25 °C PD WTC = 70 °C 12 TA = 25 °C 3.5b, c TA = 70 °C 2.2b, c Operating Junction and S torage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temper ature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maxim u m Unit Maximum Junction-to-Ambientb, e t ≤ 5 s RthJA 28 36 °C/WMaximum Junction-to-Case (Dr ain) Steady State R thJC 5.3 6.5

FEATURES

 Halogen-free According to IEC 61249-2-21 Definition  TrenchFET ® Power MOSFET  100 % R g Tested  Bui lt in ESD Protection with Zener Diode  Typical ESD Performance: 1800 V  Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

 Portable Devices - Load Switch - Battery Sw itch - Charger Switch S S D D D S G D SO-8 Top View S G D P-Channel MOSFET MMSF3P02HDR2G E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

Notes: Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond t hose listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, un less otherwise noted Paramete r Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 20 V VDS Temperature Coefficient ΔVDS/TJ ID = - 250 µA - 12 mV/°CVGS(th) Temperature Coefficient ΔVGS(th)/TJ 3 Gate-Source Threshold V oltage VGS(th) VDS = VGS, ID = - 250 µA - 0.5 - 1.2 V Gate-So urce Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 20 µA VDS = 0 V, Zero Gate V oltage Drain Current IDSS VDS = - 20 V, VGS = 0 V - 1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS ≤ - 5 V, VGS = - 4.5 V - 20 A Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 5.6 A 0.015 0.018 ΩVGS = - 2.5 V, ID = - 5.3 A 0.021 0.026 VGS = - 1.8 V, ID = - 2.5 A 0.040 0.065 Forward Tr ansconductancea gfs VDS = - 10 V, ID = - 5.6 A 35 S Dynamicb Total Gate Charge Qg VDS = - 10 V, VGS = - 8 V, ID = - 5 A 50 75 nCGate-Source Charge VDS = - 10 V, VGS = - 4.5 V, ID = - 5 A 20 30 Qgs 3.3 Gate-Drain Charge Qgd 8.4 Gate Resista nce Rg f = 1 MHz 0.2 1 2 k Ω Tur n-On Delay Time td(on) VDD = - 10 V, RL = 1 Ω ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 1 Ω 0.71 1.1 us Rise Time tr 1.7 2.6 Turn-Off Dela y Time td(off) 69 Fall Ti me tf 3.2 5 Tur n- On Delay Time td(on) VDD = - 10 V, RL = 1 Ω ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω 0.3 0.45 Rise Time tr 0.6 0.9 Turn-Off Dela y Time td(off) 10 15 Fall T ime tf 3.5 5.5 Drain-Source B ody Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 6 A Pulse Diode Forward C urrent ISM - 50 Body Diode Voltage VSD IS = - 5 A, VGS = 0 V - 0.85 - 1.2 V Body Diode Reve rse Recovery Time trr IF = 6 A, dI/dt = 100 A/µs, TJ = 25 °C 30 60 ns Body Diode Reverse Reco very Charge Qrr 20 40 nC Reverse Reco very Fall Time ta 13 ns Reverse Recove ry Rise Time tb 17 MMSF3P02HDR2G E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Gate Current vs. Gate-Source Vo ltage Output Characteristics On-Resistance vs. Drain Current - Gate Current (mA)IGSS VGS - Gate-to-Sou rce Voltage (V) TJ =2 5 ° C 0.0 0.2 0.4 0.6 0.8 1.0 03 69 1 2 15 3.0 VGS =5 V thru 3 V VGS =2V VGS =2 . 5V VGS =1 . 5V VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0 1 02 03 04 05 0 VGS =1 .8V VGS =4 . 5V VGS =2 . 5V - On-Resistance (Ω)RDS(on) ID - Drain Current (A) Gate Current vs. Gate-So urce Voltage Transfer Characteristics Gate Charge - Gate Current (A)IGSS VGS - Gate-to -Source Voltage (V) 0 3 6 9 12 15 10-9 10-8 10-7 10-6 10-5 10-4 10-3 10-2 TJ = 25 °C TJ = 150 °C TC = 25 °C TC = 125 °C TC =- 5 5 °C VGS - Gate-to-Sou rce Voltage (V) - Drain Current (A)I D 0 1 02 03 04 05 0 VDS =1 6V VDS =1 0V ID =-6A VDS =5V - Gate-to- Source Voltage (V) Qg - Total Gate Charge (nC) VGS MMSF3P02HDR2G E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Junction Temp erature On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 VGS =2 . 5V ID =-5.6 A VGS =4 . 5V TJ -J unction Temperature (°C) (Normalized) - On-ResistanceRDS(on) 0.00 0.01 0.02 0.03 0.04 0.05 0.06 012345 ID = -2.5 A; TJ = 125 °C ID = -5.6 A; TJ = 25 °C ID =-5.6 A; T J = 125 °C - On-Resistance ( Ω)RDS(on) VGS - Gate-to-Sou rce Voltage (V) ID = -2.5 A; TJ = 25 °C Power (W) Time (s) 10 10000.10.010.001 1001 Soure-Drain Dio de Forward Voltage Threshold Voltage Safe Operating Area, Junction-to-Ambient 0.1 100 1.2 TJ = 25 °C TJ = 150 °C VSD -S ource-to- Drain Voltage (V) - Source Current (A)I S 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA (V)VGS(th) TJ - Temperature (°C) 100 0.1 1 10 100 0.01

0.1 TA = 25 °C

Limited byR DS(on)* BVDSS Limited 1m s 100 µs 10 ms 1s ,1 0s DC VDS - Drain-to- Source Voltage (V) * VGS > minimu m VGS at which RDS(on) is specified - Drain Current (A)ID MMSF3P02HDR2G E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

25 °C, unless otherwise noted * The powe r d issipation PD is based on T J(max) = 150 °C, using ju nct ion-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 2 55 07 5 1 0 0 1 2 5 1 5 0 Package Limited TC - Case Temperature (°C) I D - Drain Current (A) Power Dera ting 25 50 75 100 125 150 TC - Case Temperature (°C) Power Dissipation (W) MMSF3P02HDR2G E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C , unless otherwise noted Normalized Thermal Transient Im pedance, Junction-to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 0.05 0.02 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Single Pulse Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 80 C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Duty Cycle = 0.5 Normalized Ther mal Transient Impedance, Junction-to-Case 10-3 10-210-4 0.1 0.2 0.1 Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.02 Single Pulse 0.05 10-1 MMSF3P02HDR2G E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.01 4 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 °8 °0 °8 ° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm 0.004"LBA 1 A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part N umber: MS-012 S MMSF3P02HDR2G E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR SO-8 0.246 (6.248) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) MMSF3P02HDR2G E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. MMSF3P02HDR2G E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com