MMSF2P02E MOTOROLA | Alldatasheet

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1Motorola TMOS Power MOSFET Transistor Device Data /C0068/C0101/C0115/C0105/C0103/C0110/C0101/C0114/C0039/C0115 /C0068/C0097/C0116/C0097 /C0083/C0104/C0101/C0101/C0116 Medium Power Surface Mount Products /C0084/C0077/C0079/C0083 /C0083/C0105/C0110/C0103/C0108/C0101 /C0080/C0045/C0067/C0104/C0097/C0110/C0110/C0101/C0108 /C0070/C0105/C0101/C0108/C0100 /C0069/C0102/C0102/C0101/C0099/C0116 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114/C0115 MiniMOS  devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface mount MOSFET s feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and powe r managemen t in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage m otor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

  • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
  • Logic Level Gate Drive — Can Be Driven by Logic ICs
  • Miniature SO–8 Surface Mount Package — Saves Board Space
  • Diode Is Characterized for Use In Bridge Circuits
  • Diode Exhibits High Speed
  • Avalanche Energy Specified
  • Mounting Information for SO–8 Package Provided
  • IDSS Specified at Elevated Temperature MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)(1) Rating Symbol Value Unit Drain–to–Source Voltage VDSS 20 Vdc Gate–to–Source Voltage — Continuous VGS ± 20 Vdc Drain Current — Continuous @ TA = 25°C (2) Drain Current — Continuous @ TA = 100°C Drain Current — Single Pulse (tp ≤ 10 µs) ID ID IDM 2.5 1.7 Adc Apk Total Power Dissipation @ TA = 25°C (2) PD 2.5 Watts Operating and Storage T emperature Range TJ, Tstg – 55 to 150 °C Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 20 Vdc, VGS = 5.0 Vdc, IL = 6.0 Apk, L = 12 mH, RG = 25 Ω ) EAS 216 mJ Thermal Resistance — Junction to Ambient(2) R θJA 50 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C DEVICE MARKING S2P02 (1) Negative sign for P–Channel device omitted for clarity.

ORDERING INFORMATION

Device Reel Size Tape Width Quantity MMSF2P02ER2 13″ 12 mm embossed tape 2500 units Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics— are given to facilitate “worst case” design. Designer’s, HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a registered trademark of Bergquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. REV 4 Order this document by MMSF2P02E/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA  Motorola, Inc. 1996 CASE 751–05, Style 13 SO–8 N–C 1 Top View Source Source Gate Drain Drain Drain Drain D S G /C0077/C0077/C0083/C0070/C0050/C0080/C0048/C0050/C0069 SINGLE TMOS POWER MOSFET

2.5 AMPERES

20 VOLTS

R DS(on) = 0.250 OHM Motorola Preferred Device

/C0077/C0077/C0083/C0070/C0050/C0080/C0048/C0050/C0069

2 Motorola TMOS Power MOSFET Transistor Device Data

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) V(BR)DSS 24.7 Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS 1.0 µAdc Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS — — 100 nAdc ON CHARACTERISTICS (2) Gate Threshold Voltage (VDS = VGS , ID = 250 µAdc) Threshold T emperature Coefficient (Negative) VGS(th) 1.0 2.0 4.7 3.0 Vdc mV/°C Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 2.0 Adc) (VGS = 4.5 Vdc, ID = 1.0 Adc) R DS(on) 0.19 0.3 0.25 0.4 Ohm Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc) gFS 1.0 2.8 — Mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 16 Vdc, VGS = 0 Vdc, f = 1.0 MHz) C iss — 340 475 pF Output Capacitance (VDS = 16 Vdc, VGS = 0 Vdc, f = 1.0 MHz) C oss — 220 300 Transfer Capacitance f = 1.0 MHz) C rss — 75 150 SWITCHING CHARACTERISTICS (3) Turn–On Delay Time (VDD = 10 Vdc, ID = 2.0 Adc, VGS = 5.0 Vdc, R G = 6.0 Ω ) td(on) — 20 40 ns Rise Time (VDD = 10 Vdc, ID = 2.0 Adc, VGS = 5.0 Vdc, R G = 6.0 Ω ) tr — 40 80 Turn–Off Delay Time VGS = 5.0 Vdc, R G = 6.0 Ω ) td(off) — 53 106 Fall Time G = 6.0 Ω ) tf — 41 82 Turn–On Delay Time (VDD = 10 Vdc, ID = 2.0 Adc, VGS = 10 Vdc, R G = 6.0 Ω ) td(on) — 13 26 ns Rise Time (VDD = 10 Vdc, ID = 2.0 Adc, VGS = 10 Vdc, R G = 6.0 Ω ) tr — 29 58 Turn–Off Delay Time VGS = 10 Vdc, R G = 6.0 Ω ) td(off) — 30 60 Fall Time G = 6.0 Ω ) tf — 28 56 Gate Charge (VDS = 16 Vdc, ID = 2.0 Adc, VGS = 10 Vdc) Q T — 10 15 nC (VDS = 16 Vdc, ID = 2.0 Adc, VGS = 10 Vdc) Q 1 — 1.1 —(VDS = 16 Vdc, ID = 2.0 Adc, VGS = 10 Vdc) Q 2 — 3.3 — Q 3 — 2.5 — SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage(2) (IS = 2.0 Adc, VGS = 0 Vdc) VSD — 1.5 2.0 Vdc Reverse Recovery Time (IS = 2.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) trr — 34 64 ns (IS = 2.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) ta — 18 —(IS = 2.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) tb — 16 — Reverse Recovery Stored Charge Q RR — 0.035 — µC (1)Negative sign for P–Channel device omitted for clarity. (2) Pulse Test: Pulse Width ≤/n636861720000000000000000300 µs, Duty Cycle ≤ 2%. (3)Switching characteristics are independent of operating junction temperature.

4 Motorola TMOS Power MOSFET Transistor Device Data

by recognizing that the power MOSFET is charge controlled. by current from the generator. and Q2 and VGSP are read from the gate charge curve. on–state when calculating td(off). voltage at the source which reduces the gate drive current. tion of drain current, the mathematical solution is complex. sure and, consequently, is not specified. Figure 7. Capacitance Variation Figure 8. Gate–to–Source and Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage

6 Motorola TMOS Power MOSFET Transistor Device Data

Figure 15. Diode Reverse Recovery Waveform device junction to ambient; and the operating temperature, TA. substrate or an aluminum core board such as Thermal Clad . dissipation can be doubled using the same footprint.

  • Always preheat the device.
  • The delta temperature between the preheat and soldering should be 100°C or less.*
  • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C.
  • The soldering temperature and time shall not exceed 260°C for more than 10 seconds.
  • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less.
  • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress.
  • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. TYPICAL SOLDER HEATING PROFILE For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones and a figure for belt speed. Taken together, these control settings make up a heating “profile” for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 13 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems, but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/in- frared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177–189°C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. STEP 1 PREHEAT ZONE 1 “RAMP” STEP 2 VENT “SOAK” STEP 3 HEATING ZONES 2 & 5 “RAMP” STEP 4 HEATING ZONES 3 & 6 “SOAK” STEP 5 HEATING ZONES 4 & 7 “SPIKE” STEP 6 VENT STEP 7 COOLING 200°C 150°C 100°C 50°C TIME (3 TO 7 MINUTES TOTAL) TMAX SOLDER IS LIQUID FOR

40 TO 80 SECONDS

Figure 16. Typical Solder Heating Profile

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8 Motorola TMOS Power MOSFET Transistor Device Data

STYLE 13: PIN 1. N.C. 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN CASE 751–05 SO–8 ISSUE P SEATING PLANE C K 4X P A0.25 (0.010)M T B S S 0.25 (0.010)M B M 8X D R M J X 45 /C0095 /C0095 F –A– –B– –T– DIM MIN MAX MILLIMETERS A 4.80 5.00 B 3.80 4.00 C 1.35 1.75 D 0.35 0.49 F 0.40 1.25 G 1.27 BSC J 0.18 0.25 K 0.10 0.25 M 0 7 P 5.80 6.20 R 0.25 0.50 /C0095/C0095 G NOTES: 1. DIMENSIONS A AND B ARE DATUMS AND T IS A DATUM SURFACE. 2. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 3. DIMENSIONS ARE IN MILLIMETER. 4. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 6. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution;JAPAN : Nippon Motorola Ltd.; T atsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, P .O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454 3–14–2 T atsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315 INTERNET : http://Design–NET .com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 MMSF2P02E/D /C0042/C0077/C0077/C0083/C0070/C0050/C0080/C0048/C0050/C0069/C0047/C0068/C0042