MMSD301T1 ONSEMI | Alldatasheet
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The MMSD301T1, and MMSD701T1 devices are spin–offs of our popular MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications.
- Extremely Low Minority Carrier Lifetime
- Very Low Capacitance
- Low Reverse Leakage MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage MMSD301T1 MMSD701T1 VR 30 Vdc Forward Power Dissipation TA = 25°C PF 225 mW Junction Temperature TJ –55 to +125 °C Storage Temperature Range Tstg –55 to +150 °C DEVICE MARKING MMSD301T1 = XT, MMSD701T1 = XH ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (IR = 10 µA) MMSD301T1 MMSD701T1 V(BR)R Volts Diode Capacitance (VR = 0, f = 1.0 MHz, Note 1) MMSD301T1 MMSD701T1 C T 0.9 0.5 1.5 1.0 pF Total Capacitance (VR = 15 Volts, f = 1.0 MHz) MMSD301T1 (VR = 20 Volts, f = 1.0 MHz) MMSD701T1 C T 0.9 0.5 1.5 1.0 pF Reverse Leakage (VR = 25 V) MMSD301T1 (VR = 35 V) MMSD701T1 IR 9.0 200 200 nAdc nAdc Forward Voltage (IF = 1.0 mAdc) MMSD301T1 (IF = 10 mA) (IF = 1.0 mAdc) MMSD701T1 (IF = 10 mA) VF 0.38 0.52 0.42 0.7 0.45 0.6 0.5 1.0 Vdc Preferred devices are ON Semiconductor recommended choices for future use and best overall value. ON Semiconductor Semiconductor Components Industries, LLC, 2001 September, 2001 – Rev. 2
1 Publication Order Number:
CASE 425–04, STYLE 1 SOD–123 ON Semiconductor Preferred Devices Cathode Anode
http://onsemi.com The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. INFORMATION FOR USING THE SOD–123 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. SOD–123 POWER DISSIPATION PD = TJ(max) – TA R θJA PD = 150°C – 25°C 556°C/W = 225 milliwatts The power dissipation of the SOD–123 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipa- tion. Power dissipation for a surface mount device is deter- mined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOD–123 package, PD can be calculated as follows: The 556°C/W for the SOD–123 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milli- watts. There are other alternatives to achieving higher power dissipation from the SOD–123 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad . Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. There- fore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected.
- Always preheat the device.
- The delta temperature between the preheat and soldering should be 100°C or less.*
- When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C.
- The soldering temperature and time shall not exceed 260°C for more than 10 seconds.
- When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less.
- After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress.
- Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause exces- sive thermal shock and stress which can result in damage to the device. SOD–123 ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ mm inches 0.91 0.036 1.22 0.048 2.36 0.093 4.19 0.165
http://onsemi.com PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. STYLE 1: PIN 1. CATHODE 2. ANODE ÂÂÂ ÂÂÂ B D K A C E J H DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.055 0.071 1.40 1.80 B 0.100 0.112 2.55 2.85 C 0.037 0.053 0.95 1.35 D 0.020 0.028 0.50 0.70 H 0.000 0.004 0.00 0.10 K 0.140 0.152 3.55 3.85 CASE 425–04 ISSUE C SOD–123
http://onsemi.com Notes
http://onsemi.com Notes
http://onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION JAPAN : ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone : 81–3–5740–2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. MMSD301T1/D Thermal Clad is a trademark of the Bergquist Company. Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone : 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800–282–9855 Toll Free USA/Canada