MMQ60R044RF MGCHIP | Alldatasheet

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Technical content

  • Magnachip Semiconductor Ltd. Dec./2022/Revision/1.0 1 Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 0.044 Ω VTH,typ 4 V ID 60 A Qg,typ 160 nC Order Code Marking Temp. Range Package Packing RoHS Status MMQ60R044RFTH 60R044RF -55 ~ 150oC TO-247 Tube Halogen Free  Applications  Soft-switching Applications  Server Power Supply  Telecom  EV charging MMQ60R044RF 600V 0.044Ω N-channel MOSFET  Description MMQ60R044RF is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It has low gate charge and ultra-fast body diode, so turn off action is improved. MMQ60R044RF provides excellent performances, such as efficiency and EMI, in soft switching applications.  Features  Ultra-fast Body Diode  Low Power Loss by High Speed Switching and Low On-Resistance  100% Avalanche Tested  Green Package – Pb Free Plating, Halogen Free  Key Parameters  Ordering Information  Package & Internal Circuit G D S Downloaded From Oneyac.com
  • Magnachip Semiconductor Ltd. Dec./2022/Revision/1.0 2 Parameter Symbol Rating Unit Note Drain – Source voltage VDSS 600 V Gate – Source voltage VGSS ±30 V Continuous drain current(1) ID

60 A TC=25 oC

38 A TC=100 oC

Pulsed drain current(2) IDM 180 A Power dissipation PD 378.8 W Single - pulse avalanche energy(3) EAS 2100 mJ MOSFET dv/dt ruggedness dv/dt 50 V/ns Diode dv/dt ruggedness(4) dv/dt 50 V/ns Storage temperature Tstg -55 ~150 oC Maximum operating junction temperature Tj 150 oC 1) Id limited by maximum junction temperature 2) Pulse width tP limited by Tj,max 3) IAS = 13.5A 4) ISD ≤ ID, di/dt = 1000A/μs, VDS peak ≤ V(BR)DSS, VDD= 400V, Tj=25oC Parameter Symbol Value Unit Thermal resistance, junction-case max Rthjc 0.33 oC/W Thermal resistance, junction-ambient max Rthja 42.1 oC/W  Thermal Characteristics  Absolute Maximum Rating (Tc=25oC unless otherwise specified) Downloaded From Oneyac.com

  • Magnachip Semiconductor Ltd. Dec./2022/Revision/1.0 3 Parameter Symbol Min. Typ. Max. Unit Test Condition Drain – Source Breakdown voltage V(BR)DSS 600 - - V VGS = 0V, ID = 1mA Gate Threshold Voltage VGS(th) 3.0 4.0 5.0 V VDS = VGS, ID = 250μA Zero Gate Voltage Drain Current IDSS - - 10 μA VDS = 600V, VGS = 0V Gate Leakage Current IGSS - - 100 nA VGS = ±30V, VDS = 0V Drain-Source On State Resistance RDS(ON) - 38 44.4 mΩ VGS = 10V, ID = 30 A Parameter Symbol Min. Typ. Max. Unit Test Condition Input Capacitance Ciss - 6000 - pF VDS = 400V, VGS = 0V, f = 400kHz Output Capacitance Coss - 150 - Reverse Transfer Capacitance Crss - 18 - Effective Output Capacitance Energy Related (5) Co(er) - 241 - VDS = 0V to 480V, VGS = 0V, f = 400kHz Turn On Delay Time td(on) - 44.2 - ns VGS = 10V, RG = 2Ω, VDD = 300V, ID = 60A Rise Time tr - 199 - Turn Off Delay Time td(off) - 112 - Fall Time tf - 6.33 - Total Gate Charge Qg - 154 - nC VGS = 10V, VDD = 480V, ID = 60A Gate – Source Charge Qgs - 50 - Gate – Drain Charge Qgd - 64 - Gate Resistance RG - 3.4 - Ω VGS = 0V, f = 1MHz 5) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS  Static Characteristics (Tc=25oC unless otherwise specified)  Dynamic Characteristics (Tc=25oC unless otherwise specified) Downloaded From Oneyac.com
  • Magnachip Semiconductor Ltd. Dec./2022/Revision/1.0 4 Parameter Symbol Min. Typ. Max. Unit Test Condition Continuous Diode Forward Current ISD - - 60 A Diode Forward Voltage VSD - - 1.4 V ISD = 60 A, VGS = 0V Reverse Recovery Time trr - 230 - ns ISD = 60 A di/dt = 100A/μs VDD = 100V Reverse Recovery Charge Qrr - 2.0 - μC Reverse Recovery Current Irrm - 19.6 - A  Reverse Diode Characteristics (Tc=25oC unless otherwise specified) Downloaded From Oneyac.com
  • Magnachip Semiconductor Ltd. Dec./2022/Revision/1.0 5  Characteristic Graph Downloaded From Oneyac.com
  • Magnachip Semiconductor Ltd. Dec./2022/Revision/1.0 6 Downloaded From Oneyac.com
  • Magnachip Semiconductor Ltd. Dec./2022/Revision/1.0 7 Downloaded From Oneyac.com
  • Magnachip Semiconductor Ltd. Dec./2022/Revision/1.0 8  Test Circuit Downloaded From Oneyac.com
  • Magnachip Semiconductor Ltd. Dec./2022/Revision/1.0 9  Physical Dimension TO-247(3L) Note : Package body size, length and width do not include mold flash, protrusions and gate burrs. Downloaded From Oneyac.com
  • Magnachip Semiconductor Ltd. Dec./2022/Revision/1.0 10 DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. Magnachip reserves the right to change the specifications and circuitry without notice at any time. Magnachip does not consider responsibility for use of any circuitry other than circuitry entirely included in a Magna chip product. is a registered trademark of Magnachip Semiconductor Ltd. Downloaded From Oneyac.com