FFB3906 FAIRCHILD | Alldatasheet

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FFB3906 / FMB3906 / MMPQ3906 pin #1 pin #1 PNP Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA. Sourced from Process 66. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C  1998 Fairchild Semiconductor Corporation Thermal Characteristics TA = 25°C unless otherwise noted FFB3906 SC70-6 Mark: .2A FMB3906 SuperSOT  -6 Mark: .2A MMPQ3906 Symbol Characteristic Max Units FFB3904 FMB3904 MMPQ3904 PD Total Device Dissipation Derate above 25°C 300 2.4 700 5.6 1,000 8.0 mW mW/ °C R θJA Thermal Resistance, Junction to Ambient Effective 4 Die Each Die 415 180 125 240 °C/W °C/W °C/W NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. SOIC-16 Mark: MMPQ3906 C1 C1C2 C2C3 C3 C4C4E1 E3 B3 E4 B4 pin #1

FFB3906 / FMB3906 / MMPQ3906 Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS ON CHARACTERISTICS SMALL SIGNAL CHARACTERISTICS SWITCHING CHARACTERISTICS *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown VoltageIC = 10 µA, IE = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V IBL Base Cutoff Current V CE = 30 V, VBE = 3.0 V 50 nA ICEX Collector Cutoff Current V CE = 30 V, VBE = 3.0 V 50 nA hFE DC Current Gain * I C = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V 100 300 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 0.25 0.4 V V VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 0.65 0.85 0.95 V V fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V, f = 100 MHz

450 MHz

C obo Output Capacitance V CB = 5.0 V, IE = 0, f = 100 kHz 3.0 pF C ibo Input Capacitance V EB = 0.5 V, IC = 0, f = 100 kHz 8.0 pF NF Noise Figure (except MMPQ3906) IC = 100 µA, VCE = 5.0 V, R S =1.0kΩ , f=10 Hz to 15.7 kHz 2.5 dB td Delay Time V CC = 3.0 V, VBE = 0.5 V, 15 ns tr Rise Time I C = 10 mA, IB1 = 1.0 mA 20 ns ts Storage Time V CC = 3.0 V, IC = 10mA 110 ns tf Fall Time I B1 = IB2 = 1.0 mA 40 ns PNP Multi-Chip General Purpose Amplifier (continued) Spice Model Xtf=6 Rb=10)

FFB3906 / FMB3906 / MMPQ3906 Typical Characteristics Common-Base Open Circuit Input and Output Capacitance vs Reverse Bias Voltage 0.1 1 10 REVERSE BIAS VOLTAGE (V) CAPACITANCE (pF) C obo C ibo PNP Multi-Chip General Purpose Amplifier (continued) Typical Pulsed Current Gain vs Collector Current 0.1 0.2 0.5 1 2 5 10 20 50 100 100 150 200 250 I - COLLECTOR CURRENT (mA) h - TYPICAL PULSED CURRENT GAIN C FE 125 °C 25 °C - 40 °C V = 1.0VCE Collector-Cutoff Current vs Ambient Temperature 25 50 75 100 125 0.01 0.1 100 T - AMBIENT TEMPERATURE ( C) I - COLLECTOR CURRENT (nA) A CBO º V = 25VCB Collector-Emitter Saturation Voltage vs Collector Current 11 0 1 0 0 2 0 0 0.05 0.1 0.15 0.2 0.25 0.3 I - COLLECTOR CURRENT (mA) V - COLLECTOR EMITTER VOLTAGE (V)C CESAT 25 °C - 40 ºC 125 ºC β = 10 Base-Emitter Saturation Voltage vs Collector Current 11 0 1 0 0 2 0 0 0.2 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - BASE EMITTER VOLTAGE (V) C BESA T β = 10 25 °C - 40 ºC 125 ºC Base Emitter ON Voltage vs Collector Current 0.1 1 10 25 0.2 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - BASE EMITTER ON VOLTAGE (V) C BE(ON) V = 1VCE 25 °C - 40 ºC 125 ºC

FFB3906 / FMB3906 / MMPQ3906 Power Dissipation vs Ambient Temperature 0 25 50 75 100 125 150 0.25 0.5 0.75 TEMPERATURE ( C) P - POWER DISSIP ATION (W) º D SOT-6 SOIC-16 SC70-6 Typical Characteristics (continued) PNP Multi-Chip General Purpose Amplifier (continued) Noise Figure vs Frequency 0.1 1 10 100 f - FREQUENCY (kHz) NF - NOISE FIGURE (dB) I = 100 µA, R = 200ΩC V = 5.0VCE S I = 100 µA, R = 2.0 kΩC S I = 1.0 mA, R = 200ΩC S Noise Figure vs Source Resistance 0.1 1 10 100 R - SOURCE RESISTANCE ( ) NF - NOISE FIGURE (dB) kΩ I = 100 µAC V = 5.0V f = 1.0 kHz CE I = 1.0 mAC S Switching Times vs Collector Current 1 10 100 100 500 I - COLLECTOR CURRENT (mA ) TIME (nS) I = I = tr t s C Ic t f td Turn On and Turn Off Times vs Collector Current 1 10 100 100 500 I - COLLECTOR CURRENT (mA ) TIME (nS) I = I = t off C Ic t on V = 0.5VBE(OFF) t I = on t off Ic

FFB3906 / FMB3906 / MMPQ3906 Typical Characteristics (continued) Voltage Feedback Ratio 0.1 1 10 100 I - COLLECTOR CURRENT (mA) h - VOLTAGE FEEDBACK RATIO (x10 ) C re Input Impedance 0.1 1 10 0.1 I - COLLECTOR CURRENT (mA) h - INPUT IMPEDANCE (k ) V = 10 VCE C ie f = 1.0 kHzΩ Output Admittance 0.1 1 10 100 1000 I - COLLECTOR CURRENT (mA) h - OUTPUT ADMITTANCE ( mhos) V = 10 VCE C oe f = 1.0 kHz µ Current Gain 0.1 1 10 100 200 500 1000 I - COLLECTOR CURRENT (mA) h - CURRENT GAIN V = 10 VCE C fe f = 1.0 kHz PNP Multi-Chip General Purpose Amplifier (continued)

ACEx™ CoolFET™ CROSSVOLT™ E 2CMOS TM FACT™ FACT Quiet Series™ FAST FASTr™ GTO™ HiSeC™ The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. UHC™ VCX™