MMPQ3904

2N3904 NSC | Alldatasheet

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Discrete Power & Signal Technologies N 2N3904 / MMBT3904 / MMPQ3904 / PZT3904 2N3904 MMBT3904 MMPQ3904 PZT3904 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C C B E TO-92 B C C SOT-223 E C B E SOT-23 Mark: 1A C C C C C C C C SOIC-16 E B E B E B E B

NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 04 0V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µ A, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 6.0 V IBL Base Cutoff Current V CE = 30 V, VEB = 0 50 nA ICEX Collector Cutoff Current V CE = 30 V, VEB = 0 50 nA OFF CHARACTERISTICS ON CHARACTERISTICS* SMALL SIGNAL CHARACTERISTICS SWITCHING CHARACTERISTICS (except MMPQ3904) *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Itf=.4 Vtf=4 Xtf=2 Rb=10) Spice Model 2N3904 / MMBT3904 / MMPQ3904 / PZT3904 fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V, f = 100 MHz

300 MHz

Cobo Output Capacitance V CB = 5.0 V, IE = 0, f = 1.0 MHz 4.0 pF Cibo Input Capacitance V EB = 0.5 V, IC = 0, f = 1.0 MHz 8.0 pF NF Noise Figure (except MMPQ3904) IC = 100 µ A, VCE = 5.0 V, RS =1.0kΩ , f=10 Hz to 15.7 kHz 5.0 dB td Delay Time V CC = 3.0 V, VBE = 0.5 V, 35 ns tr Rise Time I C = 10 mA, IB1 = 1.0 mA 35 ns ts Storage Time V CC = 3.0 V, IC = 10mA 200 ns tf Fall Time I B1 = IB2 = 1.0 mA 50 ns hFE DC Current Gain I C = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V 100 300 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 0.2 0.3 V V VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 0.65 0.85 0.95 V V

NPN General Purpose Amplifier (continued) Thermal Characteristics TA = 25°C unless otherwise noted 2N3904 / MMBT3904 / MMPQ3904 / PZT3904 Symbol Characteristic Max Units 2N3904 *PZT3904 PD Total Device Dissipation Derate above 25°C 625 5.0 1,000 8.0 mW mW/ °C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 125 °C/W Symbol Characteristic Max Units **MMBT3904 MMPQ3904 PD Total Device Dissipation Derate above 25°C 350 2.8 1,000 8.0 mW mW/ °C RθJA Thermal Resistance, Junction to Ambient Effective 4 Die Each Die 357 125 240 °C/W °C/W °C/W Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.1 1 10 100 0.05 0.1 0.15 I - COLLECTOR CURRENT (mA) V - COLLECTOR-EMITTER VOLTAGE (V) CESA T 25 °C C ββ = 10 125 °C - 40 °C Base-Emitter Saturation Voltage vs Collector Current P2 3 0.1 1 10 100 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - BASE-EMITTER VOLTAGE (V)BESAT C ββ = 10 25 °C 125 °C - 40 °C Base-Emitter ON Voltage vs Collector Current 0.1 1 10 100 0.2 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - BASE-EMITTER ON VOLTAGE (V)BE(ON) C V = 5VCE 25 °C 125 °C - 40 °C Typical Pulsed Current Gain vs Collector Current 0.1 1 10 100 100 200 300 400 500 I - COLLECTOR CURRENT (mA) h - TYPICAL PULSED CURRENT GAIN FE - 40º C 25 °C C V = 5VCE 125 °C *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. **Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

NPN General Purpose Amplifier (continued) Typical Characteristics (continued) 2N3904 / MMBT3904 / MMPQ3904 / PZT3904 Collector-Cutoff Current vs Ambient Temperature 25 50 75 100 125 150 0.1 100 500 T - AMBIENT TEMPERA TURE ( C) I - COLLECTOR CURRENT (nA) A V = 30VCB CBO POWER DISSIPATION vs AMBIENT TEMPERATURE 0 2 55 07 5 1 0 0 1 2 5 1 5 0 0.25 0.5 0.75 TEMPERA TURE ( C) P - POWER DISSIP A TION (W) D o SOT-223 Test Circuits

10 KΩΩΩΩΩ

3.0 V 275 ΩΩΩΩΩ Duty Cycle ===== 2% Duty Cycle ===== 2% - 0.5 V 300 ns 10.6 V 10.9 V - 9.1 V 3.0 V 275 ΩΩΩΩΩ 1N916 FIGURE 2: Storage and Fall Time Equivalent Test Circuit FIGURE 1: Delay and Rise Time Equivalent Test Circuit