MMPQ3904

FFB3904 FAIRCHILD | Alldatasheet

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FFB3904 / FMB3904 / MMPQ3904 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Discrete POWER & Signal Technologies  1998 Fairchild Semiconductor Corporation Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units FFB3904 FMB3904 MMPQ3904 PD Total Device Dissipation Derate above 25°C 300 2.4 700 5.6 1,000 8.0 mW mW/ °C R θJA Thermal Resistance, Junction to Ambient Effective 4 Die Each Die 415 180 125 240 °C/W °C/W °C/W FFB3904 SC70-6 Mark: .1A pin #1 FMB3904 SuperSOT  -6 Mark: .1A pin #1 MMPQ3904 SOIC-16 C1 C1C2 C2C3 C3 C4C4E1 B3 E4 B4

FFB3904 / FMB3904 / MMPQ3904 NPN Multi-Chip General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown VoltageIC = 10 µA, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 6.0 V IBL Base Cutoff Current V CE = 30 V, VEB = 0 50 nA ICEX Collector Cutoff Current V CE = 30 V, VEB = 0 50 nA OFF CHARACTERISTICS ON CHARACTERISTICS* SMALL SIGNAL CHARACTERISTICS SWITCHING CHARACTERISTICS *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V, f = 100 MHz

450 MHz

C obo Output Capacitance V CB = 5.0 V, IE = 0, f = 1.0 MHz 2.5 pF C ibo Input Capacitance V EB = 0.5 V, IC = 0, f = 1.0 MHz 6.0 pF NF Noise Figure (except MMPQ3904) IC = 100 µA, VCE = 5.0 V, R S =1.0kΩ , f=10 Hz to 15.7 kHz 2.0 dB td Delay Time V CC = 3.0 V, VBE = 0.5 V, 18 ns tr Rise Time I C = 10 mA, IB1 = 1.0 mA 20 ns ts Storage Time V CC = 3.0 V, IC = 10mA 150 ns tf Fall Time I B1 = IB2 = 1.0 mA 25 ns hFE DC Current Gain I C = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V 100 300 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 0.2 0.3 V V VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 0.65 0.85 0.95 V V

FFB3904 / FMB3904 / MMPQ3904 Typical Characteristics Base-Emitter ON Voltage vs Collector Current 0.1 1 10 100 0.2 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - BASE-EMITTER ON VOLTAGE (V)BE(ON) C V = 5VCE 25 °C 125 °C - 40 °C Typical Pulsed Current Gain vs Collector Current 0.1 1 10 100 100 200 300 400 500 I - COLLECTOR CURRENT (mA) h - TYPICAL PULSED CURRENT GAIN FE - 40º C 25 °C C V = 5VCE 125 °C Base-Emitter Saturation Voltage vs Collector Current 0.1 1 10 100 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - BASE-EMITTER VOLTAGE (V) BESAT C β = 10 25 °C 125 °C - 40 °C Collector-Emitter Saturation Voltage vs Collector Current 0.1 1 10 100 0.05 0.1 0.15 I - COLLECTOR CURRENT (mA) V - COLLECTOR-EMITTER VOLTAGE (V)CESAT 25 °C C β = 10 125 °C - 40 °C Collector-Cutoff Current vs Ambient Temperature 25 50 75 100 125 150 0.1 100 500 T - AMBIENT TEMPERATURE ( C) I - COLLECTOR CURRENT (nA) A V = 30VCB CBO Capacitance vs Reverse Bias Voltage 0.1 1 10 100 REVERSE BIAS VOLTAGE (V) CAPACITANCE (pF) C obo C ibo f = 1.0 MHz NPN Multi-Chip General Purpose Amplifier (continued)

FFB3904 / FMB3904 / MMPQ3904 Typical Characteristics (continued) Noise Figure vs Frequency 0.1 1 10 100 f - FREQUENCY (kHz) NF - NOISE FIGURE (dB) V = 5.0VCE I = 100 µA, R = 500 ΩC S I = 1.0 mA R = 200Ω C S I = 50 µA R = 1.0 kΩ C S I = 0.5 mA R = 200Ω C S kΩ Noise Figure vs Source Resistance 0.1 1 10 100 R - SOURCE RESISTANCE ( ) NF - NOISE FIGURE (dB) I = 100 µAC I = 1.0 mAC S I = 50 µAC I = 5.0 mAC θ - DEGREES 100 120 140 160 180 Current Gain and Phase Angle vs Frequency 1 10 100 1000 f - FREQUENCY (MHz) h - CURRENT GAIN (dB) θ V = 40VCE I = 10 mAC h fe fe Turn-On Time vs Collector Current 11 0 1 0 0 100 500 I - COLLECTOR CURRENT (mA) TIME (nS) I = I = B1 C Ic 40V 15V 2.0V t @ V = 0VCBd t @ V = 3.0VCCr Rise Time vs Collector Current 1 10 100 100 500 I - COLLECTOR CURRENT (mA) t - RISE TIME (ns) I = I = B1 C Ic T = 125°C T = 25°CJ V = 40VCC r J NPN Multi-Chip General Purpose Amplifier (continued) Power Dissipation vs Ambient Temperature 0 25 50 75 100 125 150 0.25 0.5 0.75 TEMPERATURE ( C) P - POWER DISSIPATION (W)D o SOT-6

FFB3904 / FMB3904 / MMPQ3904 Typical Characteristics (continued) Storage Time vs Collector Current 1 10 100 100 500 I - COLLECTOR CURRENT (mA) t - STORAGE TIME (ns) I = I = B1 C Ic S T = 125°C T = 25°CJ J Fall Time vs Collector Current 1 10 100 100 500 I - COLLECTOR CURRENT (mA) t - FALL TIME (ns) I = I = B1 C Ic V = 40VCC f T = 125°C T = 25°CJ J Test Circuits

10 KΩΩΩΩΩ

3.0 V 275 ΩΩΩΩΩ Duty Cycle ===== 2% Duty Cycle ===== 2% - 0.5 V 300 ns 10.6 V 10.9 V - 9.1 V 3.0 V 275 ΩΩΩΩΩ 1N916 FIGURE 2: Storage and Fall Time Equivalent Test Circuit FIGURE 1: Delay and Rise Time Equivalent Test Circuit NPN Multi-Chip General Purpose Amplifier (continued)