TN3725A FAIRCHILD | Alldatasheet

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This device is designed for high speed core driver applications up to collector currents of 1.0 A. Sourced from Process 25. Absolute Maximum Ratings TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 1.2 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics TA = 25°C unless otherwise noted MMPQ3725 Symbol Characteristic Max Units TN3725A MMPQ3725 PD Total Device Dissipation Derate above 25°C 1.0 8.0 1.0 8.0 W mW/ °C RθJC Thermal Resistance, Junction to Case 50 °C/W RθJA Thermal Resistance, Junction to Ambient Effective 4 Die Each Die 125 125 240 °C/W °C/W °C/W TO-226C B E C C C C C C C C SOIC-16 E B E B E B E B Discrete POWER & Signal Technologies  1997 Fairchild Semiconductor Corporation

Electrical Characteristics TA= 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 04 0V V(BR)CES Collector-Emitter Breakdown Voltage IC = 10 µ A, VBE = 0 60 V V(BR)CBO Collector-Base Breakdown VoltageIC = 10 µ A, ICE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µ A, IC = 0 6.0 V ICBO Collector Cutoff Current V CB = 60 V, IE = 0 VCB = 60 V, IE = 0, TA = 100°C 1.7 120 µ A µ A ICES Collector Cutoff Current V CE = 80 V, VEB = 0 10 µ A ON CHARACTERISTICS* *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0% SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 50 mA, VCE = 10 V, f = 100 MHz

300 MHz

Cobo Output Capacitance V CB = 10 V, IE = 0, f = 1.0 MHz 10 pF Cibo Input Capacitance V EB = 0.5 V, IC = 0, f = 1.0 MHz 55 pF SWITCHING CHARACTERISTICS (except MMPQ3725) ton Turn-on Time VCC = 30 V, VBE(off) = 3.8 V, 35 ns td Delay Time I C = 500 mA, IB1 = 50 mA 10 ns tr Rise Time 30 ns toff Turn-off Time V CC = 30 V, IC = 500 mA 60 ns ts Storage Time I B1 = IB2 = 50 mA 50 ns tf Fall Time 30 ns hFE DC Current Gain I C = 10 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC =100mA,V CE =1.0V,TA = -55°C IC = 300 mA, VCE = 1.0 V IC = 500 mA, VCE = 1.0 V IC =500mA,V CE =1.0V,TA = -55°C IC = 800 mA, VCE = 2.0 V IC = 1.0 A, VCE = 5.0 V 150 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 100 mA, IB = 10 mA IC = 300 mA, IB = 30 mA IC = 500 mA, IB = 50 mA IC = 800 mA, IB = 80 mA IC = 1.0 A, IB = 100 mA 0.25 0.26 0.4 0.52 0.8 0.95 V V V V V V VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 100 mA, IB = 10 mA IC = 300 mA, IB = 30 mA IC = 500 mA, IB = 50 mA IC = 800 mA, IB = 80 mA IC = 1.0 A, IB = 100 mA 0.76 0.86 1.1 1.2 1.5 1.7 V V V V V V NPN Switching Transistor (continued)

DC Typical Characteristics Typical Pulsed Current Gain vs Collector Current 0.001 0.01 0.1 1 100 150 200 I - COLLECTOR CURRENT (A) h - TYPICAL PULSED CURRENT GAIN FE C V = 1VCE 125 ºC - 40 ºC 25 °C Collector-Emitter Saturation Voltage vs Collector Current P2 5 1 10 100 1000 0.2 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - COLLECTOR-EMITTER VOLTAGE (V)CESAT C ββ = 10 125 ºC - 40 ºC 25 °C Base-Emitter Saturation Voltage vs Collector Current 1 10 100 1000 0.2 0.4 0.6 0.8 1.2 I - COLLECTOR CURRENT (mA) V - BASE-EMITTER VOLTAGE (V) BESAT 125 ºC - 40 ºC 25 °C C ββ = 10 Base-Emitter ON Voltage vs Collector Current 0.1 1 10 25 0.2 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - BASE-EMITTER ON VOLTAGE (V)BE(ON) C V = 1VCE 125 ºC - 40 ºC 25 °C Collector-Cutoff Current vs Ambient Temperature P2 5 25 50 75 100 125 150 0.1 100 T - AMBIENT TEMPERATURE ( C) I - COLLECTOR CURRENT (uA) A V = 40VCB º CBO NPN Switching Transistor (continued)

(continued) Input/Output Capacitance vs. Reverse Bias Contours of Constant Bandwidth Product (fT) AC Typical Characteristics Switching Time vs. Collector Current Turn On / Turn Off Times vs. Collector Current Switching Times vs. Ambient Temperature Delay Time vs. Turn On Base Current and Reverse Base-Emitter Voltage

AC Typical Characteristics (continued) Storage Time vs. Turn On and Turn Off Base Currents Rise Time vs. Collector and Turn On Base Currents Fall Time vs. Turn On and Turn Off Base Currents Storage Time vs. Turn On and Turn Off Base Currents Storage Time vs. Turn On and Turn Off Base Currents NPN Switching Transistor (continued)

(continued) AC Typical Characteristics (continued) Fall Time vs. Turn On and Turn Off Base Currents Fall Time vs. Turn On and Turn Off Base Currents TO-226 POWER DISSIPATION vs AMBIENT TEMPERATURE 0 25 50 75 100 125 150 0.25 0.5 0.75 TEMPERATURE ( C) P - POWER DISSIPA TION (W) D o SOT-223

3.8 V 30 V

100 ΩΩΩΩΩ

1.0 KΩΩΩΩΩ

VIN = 9.7 V tr and tf ≤ 1 ns PW = 1.0 µs ZIN = 50 Ω Duty Cycle < 2% To sampling scope tr < 1.0 ns ZIN ≥ 100 KΩ 62 ΩΩΩΩΩ 43 ΩΩΩΩΩ 10 µµµµµF 1.0 µµµµµF 15 ΩΩΩΩΩ FIGURE 1: Switching Time Test Circuit (IC = 500 mA, IB1 = 50 mA, IB2 = 50 mA) Test Circuit