TN3467A FAIRCHILD | Alldatasheet

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This device is designed for high speed saturated switching applications at currents to 800 mA. Sourced from Process 70. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1.2 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C MMPQ3467 Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units TN3467A MMPQ3467 PD Total Device Dissipation Derate above 25°C 1.0 8.0 1.0 8.0 W mW/ °C RθJC Thermal Resistance, Junction to Case 50 °C/W RθJA Thermal Resistance, Junction to Ambient Effective 4 Die Each Die 125 125 240 °C/W °C/W °C/W TO-226C B E C C C C C C C C SOIC-16 E B E B E B E B Discrete POWER & Signal Technologies  1997 Fairchild Semiconductor Corporation

(continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS SMALL SIGNAL CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units ON CHARACTERISTICS* V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 04 0V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µ A, IE = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V IBEV Base-Cutoff Current V CE = 30 V, VBE = 3.0 V 120 nA ICEX Collector-Cutoff Current V CE = 30 V, VBE = 3.0 V 100 nA ICBO Collector-Cutoff Current V CB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150°C 0.01 µ A µ A SWITCHING CHARACTERISTICS (except for MMPQ3467) *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0% td Delay Time V CC = 30 V, VBE = 2.0 V, 10 ns tr Rise Time I C = 500 mA, IB1 = 50 mA 30 ns ts Storage Time V CC = 30 V, IC = 500 mA, 60 ns tf Fall Time I B1 = IB2 = 50 mA 30 ns hFE DC Current Gain I C = 150 mA, VCE = 1.0 V IC = 500 mA, VCE = 1.0 V IC = 1.0 A, VCE = 5.0 V 120 VCE(sat) Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 1.0 A, IB = 100 mA 0.3 0.5 1.0 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 1.0 A, IB = 100 mA 0.8 1.0 1.2 1.6 V V V fT Current Gain-Bandwidth Product IC = 50 mA, VCE = 10 V, f = 100 MHz

175 MHz

Cobo Output Capacitance V CB = 10 V, IE = 0, f = 1.0 KHz 25 pF Cibo Input Capacitance V BE = 0.5 V, IC = 0, f = 1.0 KHz 100 pF

DC Typical Characteristics Typical Pulsed Current Gain vs Collector Current 0.01 0.1 1 100 120 140 I - COLLECTOR CURRENT (A) h - TYPICAL PULSED CURRENT GAIN FE C V = 1VCE 125 ºC - 40 ºC 25 °C Collector-Emitter Saturation Voltage vs Collector Current 10 100 300 500 0.1 0.2 0.3 0.4 I - COLLECTOR CURRENT (mA) V - COLLECTOR-EMITTER VOLTAGE (V)CESAT C ββ = 10 125 ºC - 40 ºC 25 °C Base-Emitter Saturation Voltage vs Collector Current 10 100 1000 0.2 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - BASE-EMITTER VOLTAGE (V)BESA T 125 ºC - 40 ºC 25 °C C ββ = 10 Base-Emitter ON Voltage vs Collector Current 10 100 300 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - BASE-EMITTER ON VOLTAGE (V)BE(ON) C V = 5VCE 125 ºC - 40 ºC 25 °C Collector-Cutoff Current vs Ambient Temperature 25 50 75 100 125 150 100 1000 6000 T - AMBIENT TEMPERATURE ( C) I - COLLECTOR CURRENT (nA) A V = 30VCB º CBO PNP Switching Transistor (continued)

(continued) AC Typical Characteristics Switching Times vs. Collector Current Input / Output Capacitance vs. Reverse Bias Voltage Switching Times vs. Ambient Temperature Delay Time vs. Turn On Base Current and Reverse Bias Emitter Voltage Rise Time vs. Collector Current and Turn On Base Current Turn On / Turn Off Times vs. Collector Current

AC Typical Characteristics (continued) Fall Time vs. Turn On and Turn Off Base Currents Fall Time vs. Turn On and Turn Off Base Currents Storage Time vs. Turn On and Turn Off Base Currents Storage Time vs. Turn On and Turn Off Base Currents PNP Switching Transistor (continued)