MMPQ2907A

FFB2907A_1 FAIRCHILD | Alldatasheet

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Symbol Parameter Value Units VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 600 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  1998 Fairchild Semiconductor Corporation PNP Multi-Chip General Purpose Amplifier Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units FFB2907A FMB2907A MMPQ2907A PD Total Device Dissipation Derate above 25°C 300 2.4 700 5.6 1,000 8.0 mW mW/ °C R θJA Thermal Resistance, Junction to Ambient Effective 4 Die Each Die 415 180 125 240 °C/W °C/W °C/W FFB2907A SC70-6 Mark: .2F pin #1 FMB2907A SuperSOT  -6 Mark: .2F Dot denotes pin #1 pin #1 MMPQ2907A This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. SOIC-16 Mark: MMPQ2907A C1 C1C2 C2C3 C3 C4C4E1 B3 E4 B4 pin #1NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. FFB2907A / FMB2907A / MMPQ2907A

Itf=.65 Vtf=5 Xtf=1.7 Rb=10) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS ON CHARACTERISTICS SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 50 mA, VCE = 20 V, f = 100 MHz

250 MHz

C obo Output Capacitance V CB = 10 V, IE = 0, f = 100 kHz 6.0 pF C ibo Input Capacitance V EB = 2.0 V, IC = 0, f = 100 kHz 12 pF SWITCHING CHARACTERISTICS ton Turn-on Time V CC = 30 V, IC = 150 mA, 30 ns td Delay Time I B1 = 15 mA 8.0 ns tr Rise Time 20 ns toff Turn-off Time V CC = 6.0 V, IC = 150 mA 80 ns ts Storage Time I B1 = IB2 = 15 mA 60 ns tf Fall Time 20 ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Symbol Parameter Test Conditions Min Typ Max Units V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 60 V V(BR)CBO Collector-Base Breakdown VoltageIC = 10 µA, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V IB Base Cutoff Current V CB = 30 V, VEB = 0.5 V 50 nA ICEX Collector Cutoff Current V CE = 30 V, VBE = 0.5 V 50 nA ICBO Collector Cutoff Current V CB = 50 V, IE = 0 VCB = 50 V, IE = 0, TA = 125°C 0.02 µA µA hFE DC Current Gain I C = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V* IC = 500 mA, VCE = 10 V* 100 100 100 300 VCE(sat) Collector-Emitter Saturation Voltage* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 0.4 1.6 V V VBE(sat) Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA* IC = 500 mA, IB = 50 mA 1.3 2.6 V V PNP Multi-Chip General Purpose Amplifier (continued) FFB2907A / FMB2907A / MMPQ2907A

Typical Pulsed Current Gain vs Collector Current 0.1 0.3 1 3 10 30 100 300 100 200 300 400 500 I - COLLECTOR CURRENT (mA) h - TYPICAL PULSED CURRENT GAIN C FE 125 °C 25 °C - 40 °C V = 5VCE Input and Output Capacitance vs Reverse Bias Voltage 0.1 1 10 50 REVERSE BIAS VOLTAGE (V) CAPACITANCE (pF) C ob C ib Collector-Cutoff Current vs Ambient Temperature 25 50 75 1 00 1 25 0. 01 0.1 10 0 T - A MBI E NT TEMP ER ATUR E ( C) I - COLL EC TOR CUR RENT (nA ) A CBO V = 35VCB Collector-Emitter Saturation Voltage vs Collector Current 11 0 1 0 0 5 0 0 0.1 0.2 0.3 0.4 0.5 I - COLLECTOR CURRENT (mA) V - COLLECTOR EMIT TER VOLT AGE (V)C CE SAT β = 10 25 °C - 40 °C 125 °C Base-Emitter Saturation Voltage vs Collector Current 11 0 1 0 0 5 0 0 0.2 0.4 0.6 0.8 I - COLLECTOR CU RR EN T (mA ) V - B ASE EMIT TER VOLT AGE (V) C BE SAT 25 °C - 40 °C 125 °C β = 10 Base Emitter ON Voltage vs Collector Current 0 .1 1 10 25 0.2 0.4 0.6 0.8 I - COLLECTOR CU RR EN T (mA ) V - BA SE EMITTER ON VOLT AGE (V) C BE( ON) V = 5VCE 25 °C - 40 °C 125 °C PNP Multi-Chip General Purpose Amplifier (continued) FFB2907A / FMB2907A / MMPQ2907A

FFB2907A / FMB2907A / MMPQ2907A PNP Multi-Chip General Purpose Amplifier (continued) Typical Characteristics (continued) Switching Times vs Collector Current 10 100 1000 100 150 200 250 I - COLLECTOR CURRENT (mA) TIME (nS) I = I = tr t s C Ic V = 15 Vcc tf td Turn On and Turn Off Times vs Collector Current 10 100 1000 100 200 300 400 500 I - COLLECTOR CURRENT (mA) TIME (nS) I = I = ton t off C Ic V = 15 Vcc Rise Time vs Collector and Turn On Base Currents 10 100 500 I - COLLECTOR CURRENT (mA) I - TURN 0N BASE CURRENT (mA) 30 ns C t = 15 Vr 60 ns Power Dissipation vs Ambient Temperature 0 25 50 75 1 00 125 1 50 0.2 5 0.5 0.7 5 T EMPER A TURE ( C) P - P OWER DI SS IP A TI ON ( W) D SOIC-16 SOT-6 SC70-6

Typical Common Emitter Characteristics (f = 1.0kHz) Common Emitter Characteristics 12 5 1 0 2 0 5 0 0.1 0.2 0.5 I - COLLECTOR CURRENT (mA) CHAR. RELATIVE TO VALUES AT I = -10mA V = -10 VCE C C T = 25 CA o hoe hre hfe hie Common Emitter Characteristics -20-16-12-8-4 0.8 0.9 1.1 1.2 1.3 V - COLLECTOR VOL TAGE (V) CHAR. RELATIVE TO VALUES A T V = -10V I = -10mAC CE CE T = 25 CA o hoe h and hre hfe hie oe hfe hie hre Common Emitter Characteristics -40 -20 0 20 40 60 80 100 0.5 0.6 0.7 0.8 0.9 1.1 1.2 1.3 1.4 1.5 T - AMBIENT TEMPERATURE ( C) CHAR. RELATIVE TO VALUES AT T = 25 C V = -10 VCE A A hoe hre hfe hie o o I = -10mAC hfe hie hre hoe FFB2907A / FMB2907A / MMPQ2907A PNP Multi-Chip General Purpose Amplifier (continued)

PNP Multi-Chip General Purpose Amplifier (continued) FFB2907A / FMB2907A / MMPQ2907A Test Circuits FIGURE 1: Saturated Turn-On Switching Time Test Circuit FIGURE 2: Saturated Turn-Off Switching Time Test Circuit

1.0 KΩΩΩΩΩ

• 6.0 V1.5 V
• 30 V - 16 V 50 ΩΩΩΩΩ 200 ΩΩΩΩΩ

1 KΩΩΩΩΩ 37 ΩΩΩΩΩ

50 ΩΩΩΩΩ - 30 V

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