PN2369A FAIRCHILD | Alldatasheet

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PN2369A / MMBT2369A / MMPQ2369 PN2369A MMPQ2369MMBT2369A NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.5 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units PN2369A MMBT2369A* MMPQ2369 PD Total Device Dissipation Derate above 25°C 350 2.8 225 1.8 1,000 8.0 mW mW/ °C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient Effective 4 Die Each Die 357 556 125 240 °C/W °C/W °C/W C B E TO-92 C B E SOT-23 Mark: 1S C C C C C C C C SOIC-16 E B E B E B E B *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." Discrete POWER & Signal Technologies  1997 Fairchild Semiconductor Corporation

PN2369A / MMBT2369A / MMPQ2369 Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 15 V V(BR)CES Collector-Emitter Breakdown Voltage IC = 10 µ A, VBE = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µ A, IE = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 4.5 V ICBO Collector Cutoff Current V CB = 20 V, IE = 0 VCB = 20 V, IE = 0, TA = 125°C 0.4 µA µA ON CHARACTERISTICS hFE DC Current Gain* I C = 10 mA, VCE = 1.0 V IC = 10 mA,VCE = 0.35 V,TA = -55°C IC = 100 mA, VCE = 2.0 V 120 VCE(sat) Collector-Emitter Saturation Voltage* IC = 10 mA, IB = 1.0 mA IC = 10 mA, IB = 1.0 mA,TA = 125°C IC = 30 mA, IB = 3.0 mA IC = 100 mA, IB = 10 mA 0.2 0.3 0.25 0.5 V V V V VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 10 mA, IB = 1.0 mA,TA = -55°C IC = 10 mA, IB = 1.0 mA,TA = 125°C IC = 30 mA, IB = 3.0 mA IC = 100 mA, IB = 10 mA 0.7 0.59 0.85 1.02 1.15 1.6 V V V V V Symbol Parameter Test Conditions Min Max Units SMALL SIGNAL CHARACTERISTICS Cobo Output Capacitance V CB = 5.0 V, IE = 0, f = 1.0 MHz 4.0 pF Cibo Input Capacitance V EB = 0.5 V, IC = 0, f = 1.0 MHz 5.0 pF hfe Small-Signal Current Gain I C = 10 mA, VCE = 10 V, R G = 2.0 kΩ , f = 100 MHz 5.0 SWITCHING CHARACTERISTICS (except MMPQ2369) *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Spice Model Itf=.3 Vtf=4 Xtf=4 Rb=10) ts Storage Time I B1 = IB2 = IC = 10 mA 13 ns ton Turn-On Time V CC = 3.0 V, IC = 10 mA, IB1 = 3.0 mA 12 ns toff Turn-Off Time V CC = 3.0 V, IC = 10 mA, IB1 = 3.0 mA, IB2 = 1.5 mA 18 ns NPN Switching Transistor (continued)

PN2369A / MMBT2369A / MMPQ2369 DC Typical Characteristics NPN Switching Transistor (continued) DC Current Gain vs Collector Current 0.01 0.1 1 10 100 100 150 200 I - COLLECTOR CURRENT (mA) h - DC CURRENT GAIN FE C V = 1VCE - 40 ºC 25 °C 125 °C Collector-Emitter Saturation Voltage vs Collector Current P2 1 0.1 1 10 100 500 0.1 0.2 0.3 0.4 0.5 I - COLLECTOR CURRENT (mA) V - COLLECTOR-EMITTER VOLTAGE (V)CESAT - 40 ºC 25 °C C ββ = 10 125 °C Base-Emitter Saturation Voltage vs Collector Current P2 1 0.1 1 10 100 300 0.4 0.6 0.8 1.2 1.4 I - COLLECTOR CURRENT (mA) V - BASE-EMITTER VOLTAGE (V)BESAT C ββ = 10 - 40 ºC 25 °C 125 °C Base-Emitter ON Voltage vs Collector Current P2 1 0.1 1 10 100 0.2 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - BASE-EMITTER ON VOLTAGE (V)BE(ON) C V = 1VCE - 40 ºC 25 °C 125 °C Collector-Cutoff Current vs Ambient Temperature 25 50 75 100 125 150 100 600 T - AMBIENT TEMPERATURE ( C) I - COLLECTOR CURRENT (nA) A V = 20VCB º CBO

PN2369A / MMBT2369A / MMPQ2369 AC Typical Characteristics Output Capacitances vs. Reverse Bias Voltage Switching Times vs. Collector Current Storage Time vs. Turn On and Turn Off Base Currents Switching Times vs. Ambient Temperature Storage Time vs. Turn On and Turn Off Base Currents Storage Time vs. Turn On and Turn Off Base Currents NPN Switching Transistor (continued)

PN2369A / MMBT2369A / MMPQ2369 AC Typical Characteristics (continued) NPN Switching Transistor (continued) Fall Time vs. Turn On and Turn Off Base Currents Fall Time vs. Turn On and Turn Off Base Currents Fall Time vs. Turn On and Turn Off Base Currents Delay Time vs. Base-Emitter OFF Voltage and Turn On Base Current Rise Time vs. Turn On Base Current and Collector Current

PN2369A / MMBT2369A / MMPQ2369 AC Typical Characteristics (continued) Test Circuits - 10 VIN VIN 0.1 µµµµµF 'A' 500 ΩΩΩΩΩ 890 ΩΩΩΩΩ 0.1 µµµµµF 1 KΩΩΩΩΩ +6V VOUT - 4V 10% VOUT ts toff 10% 90%VOUT VIN 0VOUT 10% Pulse waveform at point ' A' toff VBB = 12 V VIN = - 20.9 V VIN VOUT 10% 90% VIN ton ton V BB = - 3.0 V V IN = + 15.25 V To sampling oscilloscope input impedance = 50Ω Rise Time ≤ 1 nsPulse generator VIN Rise Time < 1 ns Source Impedance = 50Ω PW ≥ 300 ns Duty Cycle < 2% 0.0023µµµµµF 0.0023 µµµµµF 0.0023µµµµµF 0.0023µµµµµF 10 µµµµµF 10 µµµµµF

11 V 10 V

500 ΩΩΩΩΩ 91 ΩΩΩΩΩ 0.05 µµµµµF 0.05 µµµµµF 0.1 µµµµµF 0.1 µµµµµF

3.3 KΩΩΩΩΩ

50 ΩΩΩΩΩ 3.3 KΩΩΩΩΩ 220 ΩΩΩΩΩ 50 ΩΩΩΩΩ VCC = 3.0 VVBB Pulse generator VIN Rise Time < 1 ns Source Impedance = 50Ω PW ≥ 300 ns Duty Cycle < 2% 56 ΩΩΩΩΩ FIGURE 1: Charge Storage Time Measurement Circuit FIGURE 2: tON , tOFF Measurement Circuit POWER DISSIPATION vs AMBIENT TEMPERATURE 0 25 50 75 100 125 150 0.25 0.5 0.75 TEMPERA TURE ( C) P - POWER DISSIP A TION (W)D o SOT-223 SOT-23 TO-92 NPN Switching Transistor (continued)