MMPQ2222A

FFB2222A_1 FAIRCHILD | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 7

Technical content

NPN Multi-Chip General Purpose Amplifier Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 75 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 500 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C  1998 Fairchild Semiconductor Corporation Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units FFB2222A FMB2222A MMPQ2222A PD Total Device Dissipation Derate above 25°C 300 2.4 700 5.6 1,000 8.0 mW mW/ °C R θJA Thermal Resistance, Junction to Ambient Effective 4 Die Each Die 415 180 125 240 °C/W °C/W °C/W FFB2222A FMB2222A SuperSOT  -6 Mark: .1P Dot denotes pin #1 pin #1 This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. MMPQ2222A SOIC-16 Mark: MMPQ2222A C1 C1C2 C2C3 C3 C4C4E1 B3 E4 B4 pin #1NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. pin #1 SC70-6 Mark: .1P FFB2222A / FMB2222A / MMPQ2222A

Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS ON CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown VoltageIC = 10 µA, IE = 0 75 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V ICBO Collector Cutoff Current V CB = 60 V, IE = 0 10 nA IEBO Emitter Cutoff Current V EB = 3.0 V, IC = 0 10 nA hFE DC Current Gain I C = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V* IC = 150 mA, VCE = 1.0 V* IC = 500 mA, VCE = 10 V* 100 300 VCE(sat) Collector-Emitter Saturation Voltage* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 0.3 1.0 V V VBE(sat) Base-Emitter Saturation Voltage* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 1.2 2.0 V V NPN Multi-Chip General Purpose Amplifier (continued) Spice Model Vtf=1.7 Xtf=3 Rb=10) SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 20 mA, VCE = 20 V, f = 100 MHz

300 MHz

C obo Output Capacitance V CB = 10 V, IE = 0, f = 100 kHz 4.0 pF C ibo Input Capacitance V EB = 0.5 V, IC = 0, f = 100 kHz 20 pF NF Noise Figure IC = 100 µA, VCE = 10 V, R S = 1.0 kΩ , f = 1.0 kHz 2.0 dB SWITCHING CHARACTERISTICS *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% td Delay Time V CC = 30 V, VBE(OFF) = 0.5 V, 8 ns tr Rise Time I C = 150 mA, IB1 = 15 mA 20 ns ts Storage Time V CC = 30 V, IC = 150 mA, 180 ns tf Fall Time I B1 = IB2 = 15 mA 40 ns FFB2222A / FMB2222A / MMPQ2222A

Typical Pulsed Current Gain vs Collector Current 0.1 0.3 1 3 10 30 100 300 100 200 300 400 500 I - COLLECTOR CURRENT (mA) h - TYPICAL PULSED CURRENT GAIN C FE 125 °C 25 °C - 40 °C V = 5VCE Collector-Emitter Saturation Voltage vs Collector Current 1 10 100 500 0.1 0.2 0.3 0.4 I - COLLECTOR CURRENT (mA) V - COLLECTOR-EMITTER VOLTAGE (V) CES AT 25 °C C β = 10 125 °C - 40 °C Base-Emitter Saturation Voltage vs Collector Current 1 10 100 500 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - BASE-EMITTER VOLTAGE (V) BESA T C β = 10 25 °C 125 °C - 40 °C Base-Emitter ON Voltage vs Collector Current 0.1 1 10 25 0.2 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - BASE-EMITTER ON VOLTAGE (V) BE (ON) C V = 5VCE 25 °C 125 °C - 40 °C Collector-Cutoff Current vs Ambient Temperature 25 50 75 100 125 150 0.1 100 500 T - AMBIENT TEMPERATURE ( C) I - COLLECTOR CURRENT (nA) A V = 40VCB CBO Emitter Transition and Output Capacitance vs Reverse Bias Voltage 0.1 1 10 100 REVERSE BIAS VOL TAGE (V) CAPACITANCE (pF) f = 1 MHz C ob C te NPN Multi-Chip General Purpose Amplifier (continued) FFB2222A / FMB2222A / MMPQ2222A

Typical Characteristics (continued) NPN Multi-Chip General Purpose Amplifier (continued) Turn On and Turn Off Times vs Collector Current 10 100 1000 160 240 320 400 I - COLLECTOR CURRENT (mA) TIME (nS) I = I = ton t off C Ic V = 25 Vcc Switching Times vs Collector Current 10 100 1000 160 240 320 400 I - COLLECTOR CURRENT (mA) TIME (nS) I = I = tr t s C Ic V = 25 Vcc tf td FFB2222A / FMB2222A / MMPQ2222A Power Dissipation vs Am bient Tem pe rat ure 0 25 50 75 1 00 125 1 50 0. 2 5 0.5 0. 7 5 T EMPER A TURE ( C) P - POWE R D IS SI PATION (W) D SOIC-16 SOT-6 SC70-6

Typical Common Emitter Characteristics (f = 1.0kHz) Common Emitter Characteristics 0 1 02 03 04 05 06 0 I - COLLECTOR CURRENT (mA) CHAR. RELATIVE TO VALUES AT I = 10mA V = 10 VCE C C T = 25 CA o hoe hre hfe hie Common Emitter Characteristics 0 2 04 06 08 0 1 0 0 0.4 0.8 1.2 1.6 2.4 T - AMBIENT TEMPERATURE ( C) CHAR. RELATIVE TO VALUES AT T = 25 C V = 10 VCE A A I = 10 mAC hoe hre hfe hie o o Common Emitter Characteristics 0 5 10 15 20 25 30 35 0.75 0.8 0.85 0.9 0.95 1.05 1.1 1.15 1.2 1.25 1.3 V - COLLECTOR VOL TAGE (V) CHAR. RELATIVE TO VALUES AT V = 10V CE CE T = 25 CA o hoe hre hfe hie I = 10 mAC NPN Multi-Chip General Purpose Amplifier (continued) FFB2222A / FMB2222A / MMPQ2222A

1.0 KΩΩΩΩΩ

500 ΩΩΩΩΩ 200 ΩΩΩΩΩ 50 ΩΩΩΩΩ 37 ΩΩΩΩΩ - 1.5 V 6.0 V 30 V FIGURE 2: Saturated Turn-Off Switching Time FIGURE 1: Saturated Turn-On Switching Time NPN Multi-Chip General Purpose Amplifier (continued) FFB2222A / FMB2222A / MMPQ2222A

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Rev. G ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E 2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST SyncFET™ TinyLogic™ UHC™ VCX™