FFB2222A FAIRCHILD | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

FFB2222A / FMB2222A / MMPQ2222A NPN Multi-Chip General Purpose Amplifier Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 75 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 500 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Discrete POWER & Signal Technologies  1998 Fairchild Semiconductor Corporation Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units FFB2222A FMB2222A MMPQ2222A PD Total Device Dissipation Derate above 25°C 300 2.4 700 5.6 1,000 8.0 mW mW/ °C R θJA Thermal Resistance, Junction to Ambient Effective 4 Die Each Die 415 180 125 240 °C/W °C/W °C/W FFB2222A SC70-6 Mark: .1P pin #1 FMB2222A SuperSOT  -6 Mark: .1P pin #1 This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. MMPQ2222A SOIC-16 C1 C1C2 C2C3 C3 C4C4E1 B3 E4 B4

FFB2222A / FMB2222A / MMPQ2222A Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS ON CHARACTERISTICS SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 20 mA, VCE = 20 V, f = 100 MHz

300 MHz

C obo Output Capacitance V CB = 10 V, IE = 0, f = 100 kHz 4.0 pF C ibo Input Capacitance V EB = 0.5 V, IC = 0, f = 100 kHz 20 pF NF Noise Figure IC = 100 µA, VCE = 10 V, R S = 1.0 kΩ , f = 1.0 kHz 2.0 dB SWITCHING CHARACTERISTICS *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown VoltageIC = 10 µA, IE = 0 75 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 6.0 V ICEX Collector Cutoff Current V CE = 60 V, VEB(OFF) = 3.0 V 10 nA ICBO Collector Cutoff Current V CB = 60 V, IE = 0 VCB = 60 V, IE = 0, TA = 125°C 0.01 µA µA IEBO Emitter Cutoff Current V EB = 3.0 V, IC = 0 10 nA IBL Base Cutoff Current V CE = 60 V, VEB(OFF) = 3.0 V 20 nA hFE DC Current Gain I C = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 10 mA,VCE = 10 V,TA= -55°C IC = 150 mA, VCE = 10 V* IC = 150 mA, VCE = 1.0 V* IC = 500 mA, VCE = 10 V* 100 300 VCE(sat) Collector-Emitter Saturation Voltage* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 0.3 1.0 V V VBE(sat) Base-Emitter Saturation Voltage* IC = 150 mA, IB = 1.0 mA IC = 500 mA, IB = 50 mA 0.6 1.2 2.0 V V td Delay Time V CC = 30 V, VBE(OFF) = 0.5 V, 8 ns tr Rise Time I C = 150 mA, IB1 = 15 mA 20 ns ts Storage Time V CC = 30 V, IC = 150 mA, 180 ns tf Fall Time I B1 = IB2 = 15 mA 40 ns NPN Multi-Chip General Purpose Amplifier (continued)

FFB2222A / FMB2222A / MMPQ2222A Typical Characteristics NPN Multi-Chip General Purpose Amplifier (continued) Base-Emitter ON Voltage vs Collector Current 0.1 1 10 25 0.2 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - BASE-EMITTER ON VOLTAGE (V)BE(ON) C V = 5VCE 25 °C 125 °C - 40 °C Base-Emitter Saturation Voltage vs Collector Current 1 10 100 500 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - BASE-EMITTER VOLTAGE (V)BESA T C β = 10 25 °C 125 °C - 40 °C Collector-Emitter Saturation Voltage vs Collector Current 11 0 1 0 0 5 0 0 0.1 0.2 0.3 0.4 I - COLLECTOR CURRENT (mA) V - COLLECTOR-EMITTER VOLTAGE (V)CESAT 25 °C C β = 10 125 °C - 40 °C Typical Pulsed Current Gain vs Collector Current 0.1 0.3 1 3 10 30 100 300 100 200 300 400 500 I - COLLECTOR CURRENT (mA) h - TYPICAL PULSED CURRENT GAIN C FE 125 °C 25 °C - 40 °C V = 5VCE Collector-Cutoff Current vs Ambient Temperature 25 50 75 100 125 150 0.1 100 500 T - AMBIENT TEMPERATURE ( C) I - COLLECTOR CURRENT (nA) A V = 40VCB CBO Emitter Transition and Output Capacitance vs Reverse Bias Voltage 0.1 1 10 100 REVERSE BIAS VOLTAGE (V) CAPACITANCE (pF) f = 1 MHz C ob C te

FFB2222A / FMB2222A / MMPQ2222A Typical Characteristics (continued) Turn On and Turn Off Times vs Collector Current 10 100 1000 160 240 320 400 I - COLLECTOR CURRENT (mA) TIME (nS) I = I = t on t off C Ic V = 25 Vcc Switching Times vs Collector Current 10 100 1000 160 240 320 400 I - COLLECTOR CURRENT (mA) TIME (nS) I = I = tr t s C Ic V = 25 Vcc tf td Power Dissipation vs Ambient Temperature 0 2 55 07 5 1 0 0 1 2 5 1 5 0 0.25 0.5 0.75 TEMPERATURE ( C) P - POWER DISSIPATION (W)D o SOT-6 NPN Multi-Chip General Purpose Amplifier (continued)

FFB2222A / FMB2222A / MMPQ2222A Test Circuits 30 V

1.0 KΩΩΩΩΩ

500 ΩΩΩΩΩ 200 ΩΩΩΩΩ 50 ΩΩΩΩΩ 37 ΩΩΩΩΩ - 15 V 6.0 V 30 V FIGURE 2: Saturated Turn-Off Switching Time FIGURE 1: Saturated Turn-On Switching Time NPN Multi-Chip General Purpose Amplifier (continued)