MMP60R195PB MGCHIP | Alldatasheet

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Jan. 2018 Revision 1.0 MagnaChip Semiconductor Ltd. 2 Parameter Value Unit VDS @ Tj, max 650 V RDS(on), max 0.195 Ω VTH, typ 3 V ID 20 A Qg, typ 44 nC Order Code Marking Temp. Range Package Packing RoHS Status MMP60R195PBTH 60R195PB -55 ~ 150oC TO-220 Tube Compliant MMP60R195PB 600V 0.195Ω N-channel MOSFET  Description MMP60R195PB is power MOSFET using M agnachip’s advanced super junction technology that can realize very low on -resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an ad vantage of Low EMI to designers as well as low switching loss.  Features  Low Power Loss by High Speed Switching and Low On-Resistance  100% Avalanche Tested  Green Package – Pb Free Plating, Halogen Free  Key Parameters  Ordering Information  Applications  PFC Power Supply Stages  Switching Applications  Adapter D G S G D S  Package & Internal Circuit

Jan. 2018 Revision 1.0 MagnaChip Semiconductor Ltd. 3 Parameter Symbol Rating Unit Note Drain – Source voltage VDSS 600 V Gate – Source voltage VGSS ±30 V Continuous drain current ID

20 A TC=25oC

12.7 A TC=100oC

Pulsed drain current(1) IDM 60 A Power dissipation PD 154 W Single - pulse avalanche energy EAS 420 mJ MOSFET dv/dt ruggedness dv/dt 50 V/ns Diode dv/dt ruggedness(2) dv/dt 15 V/ns Storage temperature Tstg -55 ~150 oC Maximum operating junction temperature Tj 150 oC 1) Pulse width tP limited by Tj,max 2) ISD ≤ ID, VDS peak ≤ V(BR)DSS Parameter Symbol Value Unit Thermal resistance, junction-case max Rthjc 0.81 oC/W Thermal resistance, junction-ambient max Rthja 62.5 oC/W  Thermal Characteristics  Absolute Maximum Rating (Tc=25oC unless otherwise specified)

Jan. 2018 Revision 1.0 MagnaChip Semiconductor Ltd. 4 Parameter Symbol Min. Typ. Max. Unit Test Condition Drain – Source Breakdown voltage V(BR)DSS 600 - - V VGS = 0V, ID = 0.25mA Gate Threshold Voltage VGS(th) 2 3 4 V VDS = VGS, ID = 0.25mA Zero Gate Voltage Drain Current IDSS - - 1 uA VDS = 600V, VGS = 0V Gate Leakage Current IGSS - - 100 nA VGS = ±30V, VDS = 0V Drain-Source On State Resistance RDS(ON) - 0.17 0.195 Ω VGS = 10V, ID = 7.3A Parameter Symbol Min. Typ. Max. Unit Test Condition Input Capacitance Ciss - 1569 - pF VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 999 - Reverse Transfer Capacitance Crss - 56 - Effective Output Capacitance Energy Related (4) Co(er) - 47 - VDS = 0V to 480V, VGS = 0V, f = 1.0MHz Turn On Delay Time td(on) - 24 - ns VGS = 10V, RG = 25Ω, VDS = 300V, ID = 20A Rise Time tr - 50 - Turn Off Delay Time td(off) - 150 - Fall Time tf - 46 - Total Gate Charge Qg - 44 - nC VGS = 10V, VDS = 480V, ID = 20A Gate – Source Charge Qgs - 11 - Gate – Drain Charge Qgd - 19 - Gate Resistance RG - 2.2 - Ω VGS = 0V, f = 1.0MHz 3) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS  Static Characteristics (Tc=25oC unless otherwise specified)  Dynamic Characteristics (Tc=25oC unless otherwise specified)

Jan. 2018 Revision 1.0 MagnaChip Semiconductor Ltd. 5 Parameter Symbol Min. Typ. Max. Unit Test Condition Continuous Diode Forward Current IS - - 20 A Diode Forward Voltage VSD - - 1.4 V IS = 20A, VGS = 0V Reverse Recovery Time trr - 403 - ns IS = 20A di/dt = 100A/us VDD = 100V Reverse Recovery Charge Qrr - 6.1 - uC Reverse Recovery Current Irrm - 30.3 - A  Reverse Diode Characteristics (Tc=25oC unless otherwise specified)

Jan. 2018 Revision 1.0 MagnaChip Semiconductor Ltd. 6  Characteristic Graph

Jan. 2018 Revision 1.0 MagnaChip Semiconductor Ltd. 7

Jan. 2018 Revision 1.0 MagnaChip Semiconductor Ltd. 8

Jan. 2018 Revision 1.0 MagnaChip Semiconductor Ltd. 9  Test Circuit

Jan. 2018 Revision 1.0 MagnaChip Semiconductor Ltd. 10  Physical Dimension

3 Leads, TO-220

Note : Package body size, length and width do not include mold flash, protrusions and gate burrs

Jan. 2018 Revision 1.0 MagnaChip Semiconductor Ltd. 11 DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider re sponsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered tra demark of MagnaChip Semiconductor Ltd.