MMN400A006U1 MACMIC | Alldatasheet
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Type RDS(ON) max TJ=25℃IDVDS PRODUCT FEATURES □ High efficiency DC/DC Converters MMN400A006U1 60V 400A N-ch Power MOSFET Module RoHS Compliant August 2016 □ RDS(ON).typ=0.35mΩ@VGS=10V □ Fast Recovery body Diode □ Low Gate Charge Minimize Switching Loss □ 175℃operating temperature Preliminary □ 20K Ω Gate Protected Resistance Inside □ Inside the module,each MOSFET chip has a gate resistance:2.2 Ω □ ISG EV Products □ UPS inverter PackageTJmax Marking Unit W mJ Unit K/W g Type MMN400A006U1 RDS(ON).max TJ=25℃ 0.75mΩ ID 60V VDS 175 ±20 VDSS 400A -40～125 Drain - Source Voltage TC=25℃, TJmax=175℃ Max. Junction Temperature Limited by TJmax TJ=25℃ Storage Temperature Range 800 Parameter/Test Conditions 0.15 V Symbol PD Continuous Drain Current 400 VGSS Values TC=110℃, TJmax=175℃ 610 TJmax TSTG Symbol EAS Single Pulse Avalanche Energy TBD 2.5～5 175℃ 1000TC=25℃, TJmax=175℃ NA Pulsed Drain Current at VGS=10V VDD=50V,L=1mH Maximum Power Dissipation Values ID PackageTJmax Marking RthJC Thermal resistance,junction to case Per MOSFET MMN400A006U1 THERMAL AND MODULE CHARACTERISTICS (T C =25°C unless otherwise specified) Gate - Source Voltage IDM Parameter/Test Conditions ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) A Weight 110 Torque to heatsink Recommended（M5） 2.5～5 to terminal Recommended（M5） Nm MacMic Science & Technology Co., Ltd. Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com1 All d ata sheet.com
V mΩ mA V mA Ω nC nC nC nF nF nF ns ns ns ns 210 4.0V GS(th) 260 170 Gate Threshold Voltage VGS=10V, ID=400A 2.0 208 675 MMN400A006U1 0.75Drain Source ON ResistanceRDS(ON) Drain Source Leakage Current ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Drain Source Breakdown Voltage 1.8 223 Integrated Gate Resistor Gate Source Charge Min. VDS=60V,VGS=0V -2VDS=0V,VGS=±20V 1.05 MOSFET VGS= VDS , ID=1mA Max. 60VGS=0V, ID=1mA Typ. V(BR)DSS Parameter/Test Conditions IDSS Symbol 0.35 Qgd VDD=30V, ID=200A , VGS=10VQgs Total Gate ChargeQg Reverse Transfer Capacitance Gate Drain Charge Fall Time td(on) Turn on Delay Time VDD=30V,ID=300A, RG =1.5Ω, VGS=10V, Resistive Load Turn off Delay Time tf VDS=25V, VGS=0V, f =1MHzCoss Rise Time td(off) TJ=25℃ tr IGSS Gate Leakage Current Rgint Ciss Input Capacitance Output Capacitance Crss Unit A A V ns nC t rr 140Reverse Recovery time Reverse Recovery Charge Limited by T Jmax Min.Parameter/Test Conditions Typ. 400 1.2 550 0.85 Max. IS=400A , VGS=0V Continuous Source Drain Current QRR 800 VSD ISD ISDM Pulse Source Drain Current Source-Drain BODY-DIODE CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Forward Voltage IF=100A , VGS=0V dIF/dt=-100A/μs 2 2 All d ata sheet.com