MMN1000DB010B MACMIC | Alldatasheet
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ƶ 10K /g525 Gate Protected Resistance Inside ƶ Synchronous Rectifier PackageTJmax MMN1000DB010B 100V 1000A N-ch Power MOSFET Module RoHS Compliant March 2016 ƶ RDS(ON).typ=0.57m/g525@VGS=10V ƶ Fast Recovery body Diode ƶ Low Gate Charge Minimize Switching Loss ƶ 175ćoperating temperature Preliminary PRODUCT FEATURES ƶ High efficiency DC/DC Converters Type RDS(ON) max TJ=25ćIDVDS Unit W mJ Unit K/W V g Nm Weight 240 Visol Torque to heatsink Recommended˄M5˅ 2.5̚5 3000 Marking RthJC Thermal resistance,junction to case Per MOSFET MMN1000DB010B THERMAL AND MODULE CHARACTERISTICS (T C =25°C unless otherwise specified) Gate - Source Voltage IDM Parameter/Test Conditions ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) A Values ID PackageTJmax 175ć 1360 NDB Pulsed Drain Current at VGS=10V VDD=50V,L=1mH Maximum Power Dissipation to terminal Recommended˄M5˅ 2.5̚5 Values TC=80ć 1250 TJmax TSTG Symbol EAS Single Pulse Avalanche Energy 2500 V Symbol PD Continuous Drain Current 1000 VGSS -40̚125 Drain - Source Voltage TC=25ć Max. Junction Temperature Limited by TJmax TJ=25ć Storage Temperature Range 2000 Parameter/Test Conditions 0.11 AC, 50Hz(R.M.S), t=1minute ć 175 100 ±20 VDSS Isolation Breakdown Voltage Type MMN1000DB010B RDS(ON).max TJ=25ć 0.75m/g525 ID 1000A VDS 100V MacMic Science & Technology Co., Ltd. Add˖#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China Tel.˖+86-519-85163708 Fax˖+86-519-85162291 Post Code˖213022 Website˖www.macmicst.com1 All d ata sheet.com
V mA V mA /g525 nC nC nC nF nF nF ns ns ns ns TJ=25ć tr IGSS Gate Leakage Current Rgint Ciss Input Capacitance Output Capacitance Crss td(on) Turn on Delay Time VDD=60V,ID=200A, RG =5/g525, VGS=10V, Resistive LoadTurn off Delay Time tf VDS=25V, VGS=0V, f =1MHzCoss Rise Time td(off) 23Fall Time Qgd VDD=65V, ID=600A , VGS=10VQgs Total Gate ChargeQg Gate Source Charge V(BR)DSS Parameter/Test Conditions IDSS Symbol Drain Source Breakdown Voltage 0.8 VGS=10V, ID=500A(chip) 0.57 Max. 100 VGS=10V, ID=500A(terminal) VGS=0V, ID=1mA 0.95 Typ. Drain Source Leakage Current 1320 ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) -2VDS=0V,VGS=±20V MOSFET VGS= VDS , ID=2mA Integrated Gate Resistor Min. VDS=100V,VGS=0V 1.6 340 1.45Reverse Transfer Capacitance Gate Drain Charge 2.0 450 6.1 MMN1000DB010B 0.75 Drain Source ON ResistanceRDS(ON) 364 Gate Threshold Voltage m/g525 4.0VGS(th) Unit A A V ns nC IF=200A , VGS=0V dIF/dt=-100A//g541s Forward Voltage QRR 2000 VSD ISD ISDM Pulse Source Drain Current Source-Drain BODY-DIODE CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol IS=500A , VGS=0V Continuous Source Drain Current 1250 1.2 4400 1.0 Max. Limited by TJmax Min.Parameter/Test Conditions Typ. Reverse Recovery Charge 220Reverse Recovery timetrr 2 2 All d ata sheet.com