MML1225 DCCOM | Alldatasheet
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Technical content
DC COMPONENTS CO., LTD. TECHNICAL SPECIFICA TIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 300 to 380 Volts CURRENT - 0.8 Ampere
Description
These Silicon Controlled Rectifiers are high performance planar diffused PNPN devices. They are intended for low cost, high volume applications. Pinning 1 = Gate 2 = Anode 3 = Cathode Characteristic Symbol Rating Unit Peak Repetitive Off-State MML1225 VDRM 300 V Voltage(RGK=1KΩ) MXL1225 380 On-State RMS Current(TC=40oC) IT(RMS) 0.8 A Peak Gate Current(10µs Max) IGM 1 A Gate Power Dissipation(20ms Max) PG(AV) 0.1 W Reverse Peak Gate Voltage VGRM 8 V Operating Junction Temperature TJ -40 to +125 oC Storage Temperature TSTG -40 to +125 oC Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Min Typ Max Unit Test Conditions Peak Repetitive Forward TA=25oC IDRM - - 5 µA VAK=Rated VDRM or VRRM Off-State Blocking Current TA=125oC - - 100 RGK=1KΩ Peak Forward On-State Voltage VTM - - 1.4 V ITM=0.4A Peak, TJ=25oC - - 2.2 ITM=0.8A Peak, TJ=25oC Continuous DC Gate Trigger Current IGT - - 200 µA VAK=7V DC, RL=100Ω Continuous DC Gate Trigger Voltage VGT - - 0.8 V VAK=7V DC, RL=100Ω DC Holding Current IH - - 5 mA RGK=1KΩ, Gate Open DC Latching Current IL - - 6 mA RGK=1KΩ, Gate Open Critical Rate-of-Rise of Off-State Voltage dv/dt 25 - - V/µS VD=0.67VDRM, RGK=1KΩ, TJ=125oC Critical Rate-of-Rise of Off-State Current di/dt 30 - - A/µS IG=10mA, diG/dt=0.1A/µS, TJ=125oC Gate Controlled Delay Time Tgd - - 0.5 µsec IG=10mA, diG/dt=0.1A/µS Thermal Resistance, Junction to Case RθJC 100 - - oC/W -
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified) SOT-89 Dimensions in inches and (millimeters) .063(1.60) .055(1.40) .066(1.70) .014(0.35) .120(3.04) .117(2.96) .181(4.60) .173(4.40) .060(1.52) .058(1.48) .020(0.51) .014(0.36) .102(2.60) .095(2.40) 1 2 3