MMK75U160UX MACMIC | Alldatasheet
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Technical content
y Isolated Module Package y Current Stabilized Power Supply y Isolation voltage 3000 V y Switching Power Supply y Three Phase Bridge and a Thyristor y Inverter For AC or DC Motor Control MMK75U160UX 1600V 75A Three Phase Diode+Thyristor Module May 2015 Version 01 RoHS Compliant
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS (Thyristor) T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Values VRRM Repetitive Peak Reverse Voltage 1600 VVDRM Repetitive Peak Off-State Voltage 1600 VRSM Non-Repetitive Peak Reverse Voltage 1700 IT(AV) Average On State Current Single phase, half wave, 180°conduction, Tc=90℃ AIT(RMS) R.M.S. On State Current 117 ITSM Non-Repetitive Surge On-State Current 1/2 cycle, 50/60HZ, peak value, Tc =45℃ 1500/1650 I2t For Fusing 1/2 cycle, 50/60HZ, peak value ,Tc =45℃ 11.2/11.3 TJ Junction Temperature(Thyristor) -40 to +125 ABSOLUTE MAXIMUM RATINGS (Three Phase Diode) Symbol Parameter/Test Conditions Values VRRM Repetitive Peak Reverse Voltage 1600 V VRSM Non-Repetitive Peak Reverse Voltage 1700 I D Output Current(D.C.) Three phase, half wave, Tc= 95°C 75 A IFSM Non-Repetitive Surge Forward Current 1/2 cycle, 50/60HZ, peak value, Tc =45℃ 1050/1150 I2t For Fusing 1/2 cycle, 50/60HZ, peak value ,Tc =45℃ 5.5/5.49 TJ Junction Temperature(Diode) -40 to +150 MM i S i & Thl C L t d MacMic Science & Technology Co., Ltd. Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com All d ata sheet.com
V V mΩ V mA mA mA A Typ. Max. MMK75U160UX ELECTRICAL CHARACTERISTICS (Thyristor) T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Min. mA IRRM Maximum Peak Reverse Current VR = VRRM, TJ = 125℃ 25 IDRM Maximum Peak Off-State Current VD = VDRM, TJ = 125℃ VTM Maximum on-state voltage drop ITM=250A,td=10 ms, half sine 1.5 VTO For power-loss calculations only TJ = 125℃ 0.85 rT 2.7 VGT Max. required DC gate voltage to trigger VA=6V, RA=1Ω,TJ = -40℃ 4.0 VVA=6V, RA=1Ω 1.0 2.5 VA=6V, RA=1Ω,TJ = 125℃ 1.7 IGT Max. required DC gate current to trigger VA=6V, RA=1Ω,TJ = -40℃ 270 mAVA=6V, RA=1Ω 75 150 VA=6V, RA=1Ω,TJ = 125℃ 80 VGD Max. required DC gate voltage not to trigger,VD = VDRM, TJ = 125℃ 0.25 IGD Max. required DC gate current not to trigger,VD = VDRM, TJ = 125℃ 6 IH Maximum holding current 100 200 IL Maximum latching current 200 400 PGM Maximum peak gate power 12 W PG(AV) Maximum average gate power 3.0 I Maximum peak gate current 30 A V K /W Unit V V mΩ IGM Maximum peak gate current 3.0 -VGM Maximum peak negative gate voltage 10 dv/dt Critical Rate of Rise of Off-State Voltage,TJ=125℃,exponential to 67% rated VDRM
1000 V/μs
di/dt Max.Rate of Rise of Turned-on Current, TJ =125℃,ITM=250A, rated VDRM 150 A/μs Rth(J-C) Junction-to-Case Thermal Resistance 0.3 ELECTRICAL CHARACTERISTICS (Three Phase Diode) Symbol Parameter/Test Conditions Min. Typ. Max. IRM Maximum Reverse Leakage Current VR = VRRM 0.5 mAVR = VRRM, TJ = 125℃ 10 VF Forward Voltage Drop IF=75A 1.35 VTO For power-loss calculations only , TJ = 125°C 0.93 rT 5 Rth(J-C) Junction-to-Case Thermal Resistance per diode 0.9 K /W per module 0.15 2 2 All d ata sheet.com
V Nm Nm g MMK75U160UX MODULE CHARACTERISTICS T C =25°C unless otherwise specified TJ Junction Temperature -40 to +125 TSTG Storage Temperature Range -40 to +125 VISO Isolation Breakdown Voltage AC, 50Hz(R.M.S), t=1minute 3000 Torque to heatsink Recommended（M6） 3～5 to terminal Recommended（M5） 2.5～5 Weight 215 100 200 300 400 100 125 IT(A) PAV (W) 25℃ DC 180° max. 120° Figure1. Forward Voltage Drop vs Forward Current Figure2. Power dissipation vs. IT Figure3. SCR Max Non-Repetitive Surge Current Figure4. SCR IT(AV)vs.TC 0 0.5 1 1.5 2 2.5 0 1 53 04 56 07 5 300 600 900 1200 1500 1 10 100 IT(A)VTM(V) ITSM (A) Cycles 50HZ 100 0 25 50 75 100 125 150 TC（℃） IT(A) θ:Conduction Angle 180°Conduction Angle 3 3 All d ata sheet.com
Figure5. Forward Voltage Drop vs Forward Current Figure6. Power dissipation vs. ID 100 150 200 250 300 00 . 511 . 522 . 5 100 150 200 250 300 0 2 04 06 08 0 1 0 0 800 1000 1200 100 ID(A)VF(V) IF(AV)(A) PAV (W) (A) Max. 25℃ Three-Phase Max. 50HZ DC Figure7. Diode Max Non-Repetitive Surge Current Figure8. Output current vs.Case temperature 0.001 0.01 0.1 0.001 0.01 0.1 1 10 Thyristor Diode ZthJC (K/W) 200 400 600 1 10 100 25 50 75 100 125 150 IFSM( Cycles TC（℃） ID(A 4Figure9. Transient Thermal Impedance of Per Diode and SCR Rectangular Pulse Duration (S) All d ata sheet.com
Figure 10. SCR Gate Characteristics