MMK35LB160HB MACMIC | Alldatasheet
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Technical content
y Electrically Isolated by DBC Ceramic y DC Motor Control and Drives y High Surge Current Capability y Supply for DC power Equipment y Low Inductance Package MMK35LB160HB Half Controlled Single Phase Rectifier Bridge May 2015 Version 01 RoHS Compliant
APPLICATIONS
MAXIMUM VOLTAGE RATINGS T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Values Unit Unit A2S Unit A2S Symbol Parameter/Test Conditions UnitMMK35LB160HB VRRM Repetitive Peak Reverse Voltage 1600 VVDRM Repetitive Peak Off State Voltage 1600 VRSM Non-Repetitive Peak Reverse Voltage 1700 ABSOLUTE MAXIMUM RATINGS (Thyristor) Symbol Parameter/Test Conditions Values IT(AV) Average On State Current Single phase, half wave, 180°conduction, Tc= 95℃ AIT(RMS) R.M.S. On State Current 55 ITSM Non-Repetitive Surge On-State Current 1/2 cycle, 50/60HZ, peak value, Tc =45℃ 450/500 I2t For Fusing 1/2 cycle, 50/60HZ, peak value ,Tc =45℃ 1012/1037 TJ Junction Temperature(Thyristor) -40 to +125 ABSOLUTE MAXIMUM RATINGS (Diode) Symbol Parameter/Test Conditions Values IF(AV) Average Forward Current Single phase, half wave, 180°conduction, Tc= 105 AIF(RMS) R.M.S. Forward Current 55 IFSM Non-Repetitive Surge Forward Current 1/2 cycle, 50/60HZ, peak value, Tc =45℃ 600/650 I2t For Fusing 1/2 cycle, 50/60HZ, peak value ,Tc =45℃ 1800/1753 TJ Junction Temperature(Diode) -40 to +150 MacMic Science & Technology Co Ltd MacMic Science & Technology Co., Ltd. Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com All d ata sheet.com
V V mΩ V mA mA mA A Typ. Max. MMK35LB160HB ELECTRICAL CHARACTERISTICS (Thyristor) T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Min. mA IRRM Maximum Peak Reverse Current VR = VRRM, TJ = 125℃ 25 IDRM Maximum Peak Off-State Current VD = VDRM, TJ = 125℃ VTM Maximum on-state voltage drop ITM=110A,td=10 ms, half sine 1.75 VTO For power-loss calculations only TJ = 125℃ 0.97 rT 8.8 VGT Max. required DC gate voltage to trigger VA=6V, RA=1Ω,TJ = -40℃ 4.0 VVA=6V, RA=1Ω 1.0 2.5 VA=6V, RA=1Ω,TJ = 125℃ 1.7 IGT Max. required DC gate current to trigger VA=6V, RA=1Ω,TJ = -40℃ 270 mAVA=6V, RA=1Ω 75 150 VA=6V, RA=1Ω,TJ = 125℃ 80 VGD Max. required DC gate voltage not to trigger,VD = VDRM, TJ = 125℃ 0.25 IGD Max. required DC gate current not to trigger,VD = VDRM, TJ = 125℃ 6 IH Maximum holding current 100 200 IL Maximum latching current 200 400 PGM Maximum peak gate power 10 W PG(AV) Maximum average gate power 2.5 I Maximum peak gate current 25 A V Unit V V mΩ V N.m K /W g IGM Maximum peak gate current 2.5 -VGM Maximum peak negative gate voltage 10 dv/dt Critical Rate of Rise of Off-State Voltage,TJ=125℃,exponential to 67% rated VDRM
1000 V/μs
di/dt Max.Rate of Rise of Turned-on Current, TJ =125℃,ITM=110A, rated VDRM 150 A/μs ELECTRICAL CHARACTERISTICS (Diode) Symbol Parameter/Test Conditions Min. Typ. Max. IRM Maximum Reverse Leakage Current VR = VRRM 0.5 mAVR = VRRM, TJ = 125℃ 10 VF Forward Voltage Drop IF=35A 1.02 1.25 VTO For power-loss calculations only , TJ = 125℃ 0.88 rT 8.5 MODULE CHARACTERISTICS T C =25°C unless otherwise specified TJ Junction Temperature -40 to +125 TSTG Storage Temperature Range -40 to +125 VISO Isolation Breakdown Voltage AC, 50Hz(R.M.S), t=1minute 3000 Torque to heatsink Recommended（M5） 2.5～5 Rth(J-C) Junction-to-Case Thermal Resistance(Per Thyristor/Per Diode) 0.6/1.0 Weight 85 2 2 All d ata sheet.com
Figure1. Forward Voltage Drop vs Forward Current Figure2. Power dissipation vs. IT/IF(AV) 100 0 0.5 1 1.5 2 2.5 Thyristor Diode 0 1 02 03 04 0 300 400 500 600 Thyristor Diode IT/IF(AV)(A)VTM/VF(V) IT/IF(AV)(A) PAV (W) M (A) 25℃ DC 180° Thyristor F(AV)(A) max. θ:Conduction Angle 120° 180°Conduction Angle Thyristor Diode Figure3. Diode and SCR Max Non-Repetitive Surge Figure4. Diode IF(AV) and SCR IT(AV)vs.TC 100 200 300 1 10 100 IFSM/ITSM Cycles 50HZ 0 25 50 75 100 125 150 Thyristor Diode TC（℃） IT/IF 0.01 0.1 0.001 0.01 0.1 1 10 Thyristor Diode ZthJC (K/W) Figure5. Transient Thermal Impedance of Diode and SCR Rectangular Pulse Duration (S) All d ata sheet.com
Figure 6. SCR Gate Characteristics