MMK200S MACMIC | Alldatasheet
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Electrically Isolated by DBC Ceramic DC Motor Control and Drives High Surge Current Capability Battery Charges ,Heater controls,Light dimmers Low Inductance Package Static switches Unit Unit KA2S Unit KA2S MMK200S MMK200S Thyristor/Diode Module December 2014 Version 03 RoHS Compliant
APPLICATIONS
MAXIMUM VOLTAGE RATINGS T C =25°C unless otherwise specified Module Type VRRM/VDRM VRSM MMK200S080B MMK200S080UK MMK200S080UA 800 900 V MMK200S120B MMK200S120UK MMK200S120UA 1200 1300 MMK200S140B MMK200S140UK MMK200S140UA 1400 1500 MMK200S160B MMK200S160UK MMK200S160UA 1600 1700 MMK200S180B MMK200S180UK MMK200S180UA 1800 1900 MMK200S200B MMK200S200UK MMK200S200UA 2000 2100 MMK200S220B MMK200S220UK MMK200S220UA 2200 2300 ABSOLUTE MAXIMUM RATINGS (Thyristor) Symbol Parameter/Test Conditions Values IT(AV) Average On State Current Single phase, half wave, 180°conduction, TC= 80°C 200 AIT(RMS) R.M.S. On State Current 310 ITSM Non Repetitive Surge On State Current 1/2 cycle, 50/60Hz, peak value, TC =45°C 5000/5400 I2t I2t (For Fusing) 1/2 cycle, 50/60Hz, peak value ,TC =45°C 125/121 TJ Junction Temperature(Thyristor) -40 to +125 ABSOLUTE MAXIMUM RATINGS (Diode) Symbol Parameter/Test Conditions Values IF(AV) Average Forward Current Single phase, half wave, 180°conduction, TC= 95°C 200 AIF(RMS) R.M.S. Forward Current 310 IFSM Non Repetitive Surge Forward Current 1/2 cycle, 50/60Hz, peak value, TC =45°C 6800/7300 I2t For Fusing 1/2 cycle, 50/60Hz, peak value ,TC =45°C 231.2/221.1 MacMic Science & Technology Co., Ltd. Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com All d ata sheet.com
V V mΩ V mA mA mA A V Unit V V mΩ V Nm Nm K /W g Typ. Max. MMK200S ELECTRICAL CHARACTERISTICS (Thyristor) T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Min. mAIRRM Maximum Peak Reverse Current VR = VRRM, TJ = 125°C 25 IDRM Maximum Peak Off-State Current VD = VDRM, TJ = 125°C VTM Maximum on state voltage drop ITM=500A,td=10 ms, half sine 1.75 VTO For power loss calculations only TJ = 125°C 0.80 rT 2.0 VGT Max. required DC gate voltage to trigger VA=6V, RA=1Ω,TJ = -40°C 4.0 VVA=6V, RA=1Ω 1.0 2.5 VA=6V, RA=1Ω,TJ = 125°C 1.7 IGT Max. required DC gate current to trigger VA=6V, RA=1Ω,TJ = -40°C 270 mAVA=6V, RA=1Ω 75 150 VA=6V, RA=1Ω,TJ = 125°C 80 VGD Max. required DC gate voltage not to trigger,VD = VDRM, TJ = 125°C 0.25 IGD Max. required DC gate current not to trigger,VD = VDRM, TJ = 125°C 6 IH Maximum holding current 100 200 IL Maximum latching current 200 400 PGM Maximum peak gate power 12 WPG(AV) Maximum average gate power 3.0 IGM Maximum peak gate current 3.0 -VGM Maximum peak negative gate voltage 10 dv/dt Critical Rate of Rise of Off-State Voltage,TJ=125°C,exponential to 67% rated VDRM
1000 V/μs
di/dt Max.Rate of Rise of Turned on Current, TJ =125°C,ITM=500A, rated VDRM 150 A/μs ELECTRICAL CHARACTERISTICS (Diode) Symbol Parameter/Test Conditions Min. Typ. Max. IRM Maximum Reverse Leakage Current VR = VRRM 0.5 mAVR = VRRM, TJ = 125°C 10 VF Forward Voltage Drop IF=500A 1.5 VTO For power-loss calculations only , TJ = 125°C 0.9 rT 1.0 MODULE CHARACTERISTICS T C =25°C unless otherwise specified TJ Junction Temperature -40 to +125 TSTG Storage Temperature Range -40 to +125 VISO Isolation Breakdown Voltage AC, 50Hz(R.M.S), t=1minute 3000 Torque to heatsink Recommended（M6） 3～5 Torque to terminal Recommended（M6） 3～5 RthJC Junction-to-Case Thermal Resistance(Per Thyristor/Per Diode) 0.12/0.14 Weight 160 All d ata sheet.com