MMK160S160B MACMIC | Alldatasheet
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Technical content
y Electrically Isolated by DBC Ceramic y DC Motor Control and Drives y High Surge Current Capability y Battery Charges ,Heater controls,Light dimmers y Low Inductance Package y Static switches MMK160S 160A Thyristor/Diode Module May 2015 Version 01 RoHS Compliant
APPLICATIONS
MAXIMUM VOLTAGE RATINGS T C =25°C unless otherwise specified Unit Unit KA2S Unit KA2S Module Type VRRM/VDRM VRSM MMK160S120B MMK160S120UK MMK160S120UA 1200 1300 VMMK160S140B MMK160S140UK MMK160S140UA 1400 1500 MMK160S160B MMK160S160UK MMK160S160UA 1600 1700 ABSOLUTE MAXIMUM RATINGS (Thyristor) Symbol Parameter/Test Conditions Values IT(AV) Average On State Current Single phase, half wave, 180°conduction, Tc= 80℃ 160 AIT(RMS) R.M.S. On State Current 250 ITSM Non-Repetitive Surge On-State Current 1/2 cycle, 50/60HZ, peak value, Tc =45℃ 3300/3600 I2t For Fusing 1/2 cycle, 50/60HZ, peak value ,Tc =45℃ 54.4/53.7 TJ Junction Temperature(Thyristor) -40 to +125 ABSOLUTE MAXIMUM RATINGS (Diode) Symbol Parameter/Test Conditions Values IF(AV) Average Forward Current Single phase, half wave, 180°conduction, Tc= 95℃ 160 AIF(RMS) R.M.S. Forward Current 250 IFSM Non-Repetitive Surge Forward Current 1/2 cycle, 50/60HZ, peak value, Tc =45℃ 5500/6000 I2t For Fusing 1/2 cycle, 50/60HZ, peak value ,Tc =45℃ 151.2/149.4 TJ Junction Temperature(Diode) -40 to +150 MM i S i & Thl C L t d MacMic Science & Technology Co., Ltd. Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com All d ata sheet.com
V V mΩ V mA mA mA A Typ. Max. MMK160S ELECTRICAL CHARACTERISTICS (Thyristor) T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Min. mA IRRM Maximum Peak Reverse Current VR = VRRM, TJ = 125℃ 25 IDRM Maximum Peak Off-State Current VD = VDRM, TJ = 125℃ VTM Maximum on-state voltage drop ITM=500A,td=10 ms, half sine 1.75 VTO For power-loss calculations only TJ = 125℃ 0.85 rT 2.0 VGT Max. required DC gate voltage to trigger VA=6V, RA=1Ω,TJ = -40℃ 4.0 VVA=6V, RA=1Ω 1.0 2.5 VA=6V, RA=1Ω,TJ = 125℃ 1.7 IGT Max. required DC gate current to trigger VA=6V, RA=1Ω,TJ = -40℃ 270 mAVA=6V, RA=1Ω 75 150 VA=6V, RA=1Ω,TJ = 125℃ 80 VGD Max. required DC gate voltage not to trigger,VD = VDRM, TJ = 125℃ 0.25 IGD Max. required DC gate current not to trigger,VD = VDRM, TJ = 125℃ 6 IH Maximum holding current 100 200 IL Maximum latching current 200 400 PGM Maximum peak gate power 12 W PG(AV) Maximum average gate power 3.0 I Maximum peak gate current 30 A V Unit V V mΩ V N.m N.m K /W g IGM Maximum peak gate current 3.0 -VGM Maximum peak negative gate voltage 10 dv/dt Critical Rate of Rise of Off-State Voltage,TJ=125℃,exponential to 67% rated VDRM
1000 V/μs
di/dt Max.Rate of Rise of Turned-on Current, TJ =125℃,ITM=500A, rated VDRM 150 A/μs ELECTRICAL CHARACTERISTICS (Diode) Symbol Parameter/Test Conditions Min. Typ. Max. IRM Maximum Reverse Leakage Current VR = VRRM 0.5 mAVR = VRRM, TJ = 125℃ 10 VF Forward Voltage Drop IF=500A 1.5 VTO For power-loss calculations only , TJ = 125°C 0.88 rT 1.25 MODULE CHARACTERISTICS T C =25°C unless otherwise specified TJ Junction Temperature -40 to +125 TSTG Storage Temperature Range -40 to +125 VISO Isolation Breakdown Voltage AC, 50Hz(R.M.S), t=1minute 3000 Torque to heatsink Recommended（M6） 3～5 Torque to terminal Recommended（M6） 3～5 Rth(J-C) Junction-to-Case Thermal Resistance(Per Thyristor/Per Diode) 0.16/0.18 Weight 160 gg 160 All d ata sheet.com
Figure1. Forward Voltage Drop vs Forward Current Figure2. Power dissipation vs. IT/IF(AV) 100 200 300 400 500 600 0 0.5 1 1.5 2 2.5 Thyristor Diode 100 150 200 250 0 40 80 120 160 3000 4000 5000 6000 Thyristor Diode IT/IF(AV)(A)VTM/VF(V) IT/IF(AV)(A) PAV (W) M (A) 25℃ DC 180° 120 160 200 F(AV)(A) max. θ:Conduction Angle 120° 180°Conduction Angle Thyristor Diode Figure3. Diode and SCR Max Non-Repetitive Surge Figure4. Diode IF(AV) and SCR IT(AV)vs.TC 1000 2000 3000 1 10 100 IFSM/ITSM Cycles 50HZ 0 25 50 75 100 125 150 Thyristor Diode TC（℃） IT/IF 0.001 0.01 0.1 0.001 0.01 0.1 1 10 Thyristor Diode ZthJC (K/W) Figure5. Transient Thermal Impedance of Diode and SCR Rectangular Pulse Duration (S) All d ata sheet.com
Figure 6. SCR Gate Characteristics