MMK150T160UX MACMIC | Alldatasheet
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Technical content
y Isolated Module Package y Current Stabilized Power Supply y Isolation voltage 3000 V y Switching Power Supply y Three Phase Bridge and a Thyristor y Inverter For AC or DC Motor Control MMK150T160UX 1600V 150A Three Phase Diode+Thyristor Module May 2015 Version 01 RoHS Compliant
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS (Thyristor) T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Values VRRM Repetitive Peak Reverse Voltage 1600 VVDRM Repetitive Peak Off-State Voltage 1600 VRSM Non-Repetitive Peak Reverse Voltage 1700 IT(AV) Average On State Current Single phase, half wave, 180°conduction, Tc=85℃ 150 AIT(RMS) R.M.S. On State Current 235 ITSM Non-Repetitive Surge On-State Current 1/2 cycle, 50/60HZ, peak value, Tc =45℃ 2500/2750 I2t For Fusing 1/2 cycle, 50/60HZ, peak value ,Tc =45℃ 31.2/31.3 TJ Junction Temperature(Thyristor) -40 to +125 ABSOLUTE MAXIMUM RATINGS (Three Phase Diode) Symbol Parameter/Test Conditions Values VRRM Repetitive Peak Reverse Voltage 1600 V VRSM Non-Repetitive Peak Reverse Voltage 1700 I D Output Current(D.C.) Three phase, half wave, Tc= 95°C 150 A IFSM Non-Repetitive Surge Forward Current 1/2 cycle, 50/60HZ, peak value, Tc =45℃ 1730/1900 I2t For Fusing 1/2 cycle, 50/60HZ, peak value ,Tc =45℃ 14.9/14.9 TJ Junction Temperature(Diode) -40 to +150 MM i S i & Thl C L t d MacMic Science & Technology Co., Ltd. Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com All d ata sheet.com
V V mΩ V mA mA mA A Typ. Max. MMK150T160UX ELECTRICAL CHARACTERISTICS (Thyristor) T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Min. mA IRRM Maximum Peak Reverse Current VR = VRRM, TJ = 125℃ 25 IDRM Maximum Peak Off-State Current VD = VDRM, TJ = 125℃ VTM Maximum on-state voltage drop ITM=400A,td=10 ms, half sine 1.65 VTO For power-loss calculations only TJ = 125℃ 0.85 rT 2.2 VGT Max. required DC gate voltage to trigger VA=6V, RA=1Ω,TJ = -40℃ 4.0 VVA=6V, RA=1Ω 1.0 2.5 VA=6V, RA=1Ω,TJ = 125℃ 1.7 IGT Max. required DC gate current to trigger VA=6V, RA=1Ω,TJ = -40℃ 270 mAVA=6V, RA=1Ω 75 150 VA=6V, RA=1Ω,TJ = 125℃ 80 VGD Max. required DC gate voltage not to trigger,VD = VDRM, TJ = 125℃ 0.25 IGD Max. required DC gate current not to trigger,VD = VDRM, TJ = 125℃ 6 IH Maximum holding current 100 200 IL Maximum latching current 200 400 PGM Maximum peak gate power 12 W PG(AV) Maximum average gate power 3.0 I Maximum peak gate current 30 A V K /W Unit V V mΩ IGM Maximum peak gate current 3.0 -VGM Maximum peak negative gate voltage 10 dv/dt Critical Rate of Rise of Off-State Voltage,TJ=125℃,exponential to 67% rated VDRM
1000 V/μs
di/dt Max.Rate of Rise of Turned-on Current, TJ =125℃,ITM=400A, rated VDRM 150 A/μs Rth(J-C) Junction-to-Case Thermal Resistance 0.16 ELECTRICAL CHARACTERISTICS (Three Phase Diode) Symbol Parameter/Test Conditions Min. Typ. Max. IRM Maximum Reverse Leakage Current VR = VRRM 0.5 mAVR = VRRM, TJ = 125℃ 10 VF Forward Voltage Drop IF=150A 1.35 VTO For power-loss calculations only , TJ = 125°C 0.9 rT 3 Rth(J-C) Junction-to-Case Thermal Resistance per diode 0.72 K /W per module 0.12 2 2 All d ata sheet.com
V Nm Nm Nm g MMK150T160UX MODULE CHARACTERISTICS T C =25°C unless otherwise specified TJ Junction Temperature -40 to +125 TSTG Storage Temperature Range -40 to +125 VISO Isolation Breakdown Voltage AC, 50Hz(R.M.S), t=1minute 3000 Torque to heatsink Recommended（M6） 3～5 to terminal Recommended（M6） 3～5 to terminal Recommended（M4） 1～2 Weight 350 100 200 300 400 500 100 150 200 250 IT(A) PAV (W) 25℃ DC 180° max. 120° Figure1. Forward Voltage Drop vs Forward Current Figure2. Power dissipation vs. IT Figure3. SCR Max Non-Repetitive Surge Current Figure4. SCR IT(AV)vs.TC 100 0 0.5 1 1.5 2 2.5 0 30 60 90 120 150 500 1000 1500 2000 2500 1 10 100 IT(A)VTM(V) ITSM (A) Cycles 50HZ 100 150 200 0 25 50 75 100 125 150 TC（℃） IT(A) θ:Conduction Angle 180°Conduction Angle 3 3 All d ata sheet.com
Figure5. Forward Voltage Drop vs Forward Current Figure6. Power dissipation vs. ID 100 200 300 400 00 . 511 . 522 . 5 100 200 300 400 0 25 50 75 100 125 150 1200 1500 1800 150 200 ID(A)VF(V) IF(AV)(A) PAV (W) (A) Max. 25℃ Three-Phase Max. 50HZ DC Figure7. Diode Max Non-Repetitive Surge Current Figure8. Output current vs.Case temperature 0.001 0.01 0.1 0.001 0.01 0.1 1 10 Thyristor Diode ZthJC (K/W) 300 600 900 1 10 100 100 25 50 75 100 125 150 IFSM( Cycles TC（℃） ID(A 4Figure9. Transient Thermal Impedance of Per Diode and SCR Rectangular Pulse Duration (S) All d ata sheet.com
Figure 10. SCR Gate Characteristics