MMHS60R650RFZ MGCHIP | Alldatasheet

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Aug. 2024 Revision 1.1 Magnachip Semiconductor Ltd. 1 Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 0.650 Ω VTH,typ 4.0 V ID 8.0 A Qg,typ 13.0 nC Order Code Marking Temp. Range Package Packing RoHS Status MMHS60R650RFZURH 60R650RFZ -55 ~ 150oC SOT-223-2L Reel Compliant  Features  Ultra-fast Body Diode  Low Power Loss by High Speed Switching and Low On-Resistance  100% Avalanche Tested  Green Package – Pb Free Plating, Halogen Free  Zener - Integrated  Applications  Soft-switching Applications  Motor drive  Adapters  Lighting MMHS60R650RFZ 600V 0.65Ω N-channel MOSFET  Description MMHS60R650RFZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters  Ordering Information  Package & Internal Circuit G D S

Aug. 2024 Revision 1.1 Magnachip Semiconductor Ltd. 2 Parameter Symbol Rating Unit Note Drain - Source voltage VDSS 600 V Gate - Source voltage VGSS ±25 V Continuous drain current (1) ID

8.0 A TC=25℃

5.0 A TC=100℃

Pulsed drain current (2) IDM 24.0 A Power dissipation PD 7.40 W Single - pulse avalanche energy (3) EAS 130 mJ MOSFET dv/dt ruggedness dv/dt 50 V/ns Diode dv/dt ruggedness (4) dv/dt 50 V/ns Storage temperature Tstg -55 ~150 oC Maximum operating junction temperature Tj 150 oC 1) ID limited by maximum junction temperature 2) Pulse width tP limited by Tj,max 3) IAS = 1.3 A 4) ISD ≤ ID, di/dt = 500A/μs, VDS peak ≤ V(BR)DSS, VDD= 400V, Tj=25oC Parameter Symbol Value Unit Thermal resistance, junction-case max(5) RthJC 16.9 oC/W Thermal resistance, junction-ambient max(6) RthJA 84.3 oC/W 5) From junction to case (solder point) 6) Device mounted on copper area for drain connection and cooling.  Thermal Characteristics  Absolute Maximum Rating (Tc=25oC unless otherwise specified)

Aug. 2024 Revision 1.1 Magnachip Semiconductor Ltd. 3 Parameter Symbol Min. Typ. Max. Unit Test Condition Drain – Source Breakdown voltage V(BR)DSS 600 - - V VGS = 0V, ID = 1mA Gate Threshold Voltage VGS(th) 3.0 4.0 5.0 V VDS = VGS, ID = 250μA Zero Gate Voltage Drain Current IDSS - - 8 μA VDS = 600V, VGS = 0V Gate Leakage Current IGSS - - 10 μA VGS = ±25V, VDS =0V Drain-Source On State Resistance RDS(ON) - 0.59 0.65 Ω VGS = 10V, ID = 2.5A Parameter Symbol Min. Typ. Max. Unit Test Condition Input Capacitance Ciss - 430 - pF VDS = 100V, VGS = 0V, f = 400kHz Output Capacitance Coss - 20 - Reverse Transfer Capacitance Crss - 3 - Effective Output Capacitance Energy Related (7) Co(er) - 32 - VDS = 0V to 480V, VGS = 0V, f = 400kHz Turn On Delay Time td(on) - 17.0 - ns VGS = 10V, RG = 25Ω, VDS = 300V, ID = 8A Rise Time tr - 40.0 - Turn Off Delay Time td(off) - 27.0 - Fall Time tf - 17.0 - Total Gate Charge Qg - 13.0 - nC VGS = 10V, VDS = 480V, ID = 8A Gate – Source Charge Qgs - 5.0 - Gate – Drain Charge Qgd - 6.0 - Gate Resistance RG - 6.0 - Ω VGS = 0V, f = 1MHz 7) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS  Static Characteristics (Tc=25oC unless otherwise specified)  Dynamic Characteristics (Tc=25oC unless otherwise specified)

Aug. 2024 Revision 1.1 Magnachip Semiconductor Ltd. 4 Parameter Symbol Min. Typ. Max. Unit Test Condition Continuous Diode Forward Current ISD - - 8.0 A Diode Forward Voltage VSD - - 1.4 V ISD = 8A, VGS = 0V Reverse Recovery Time trr - 170 - ns ISD = 8A di/dt = 100A/μs VDD = 100V Reverse Recovery Charge Qrr - 0.70 - μC Reverse Recovery Current Irrm - 8.0 - A  Reverse Diode Characteristics (Tc=25oC unless otherwise specified)

Aug. 2024 Revision 1.1 Magnachip Semiconductor Ltd. 5  Characteristic Graph

Aug. 2024 Revision 1.1 Magnachip Semiconductor Ltd. 6

Aug. 2024 Revision 1.1 Magnachip Semiconductor Ltd. 7

Aug. 2024 Revision 1.1 Magnachip Semiconductor Ltd. 8  Test Circuit

Aug. 2024 Revision 1.1 Magnachip Semiconductor Ltd. 9  Physical Dimension SOT-223(2L) Note : Package body size, length and width do not include mold flash, protrusions and gate burrs

Aug. 2024 Revision 1.1 Magnachip Semiconductor Ltd. 10 DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. Magnachip reserves the right to change the specifications and circuitry wi thout notice at any time. Magnachip does not consider responsibility for use of any circuitry other than circuitry entirely included in a Magnachip product. is a registered trademark of Magnachip Semiconductor Ltd.