MMG300B065PD6EN MACMIC | Alldatasheet
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W Unit V A2S □ Low switching losses ±20 MacMic Science & Technology Co., Ltd. Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com October 2015 Version 01 VCES Collector Emitter Voltage TJ=25℃ Repetitive Peak Collector Current VRRM 600 DC Collector Current TC=25℃ Repetitive Peak Forward Current tp=1ms TC=80℃ V VGES □ IGBT3 CHIP(Trench+Field Stop technology) □ Fast switching and short tail current IGBT-inverter 650 IFRM I2t ABSOLUTE MAXIMUM RATINGS T C =25°C unless otherwise specified Parameter/Test Conditions TC=25℃IF(AV) 3600 Values Diode-inverter □ VCE(sat) with positive temperature coefficient □ Free wheeling diodes with fast and soft reverse recovery 300 650 Ptot □ High frequency switching application □ Medical applications A □ Motion/servo control IC MMG300B065PD6EN ABSOLUTE MAXIMUM RATINGS T C =25°C unless otherwise specified Symbol Parameter/Test Conditions 650V 300A IGBT Module RoHS Compliant □ High short circuit capability,self limiting short circuit current Power Dissipation Per IGBT 300 Average Forward Current TJ =125℃, t=10ms, VR=0V ICM 600 A Symbol Repetitive Reverse Voltage
APPLICATIONS
□ UPS systems 856 TJ=25℃ Gate Emitter Voltage Values 400 tp=1ms All d ata sheet.com
Ω µC nF pF ns ns ns ns ns ns ns ns mJ mJ mJ mJ K /W Unit ns A µC mJ K /W IRRM Max. Reverse Recovery Current 110 tf 4.9 Collector Leakage Current Max. 1.7 Symbol Parameter/Test Conditions Fall Time TJ=25℃ VCE=VGE, IC=4.8mA Collector Emitter Saturation Voltage Min. VGE(th) Qg Integrated Gate Resistor Reverse Transfer Capacitance 320 450 TJ=150℃ 300 100 TJ=25℃ TJ=150℃ 100 500 Typ. RthJCD Reverse Recovery Energy 0.3 300 6.5 1.45 1.9 Input Capacitance -400 VCE=650V, VGE=0V, TJ=150℃ Cres IGES Cies Rgint Gate Charge Typ. Gate Emitter Threshold Voltage VCE=300V, IC=300A , VGE=±15V 5.8 1.9 IC=300A, VGE=15V, TJ=25℃ Gate Leakage Current VCE=650V, VGE=0V, TJ=25℃ VCE=0V,VGE=±15V, TJ=150℃ IC=300A, VGE=15V, TJ=150℃ tr td(off) V VCE=25V, VGE=0V, f =1MHz ELECTRICAL CHARACTERISTICS T C =25°C unless otherwise specified MMG300B065PD6EN IGBT-inverter VCE(sat) ICES td(on) Parameter/Test Conditions IF=300A , VGE=0V, TJ=150℃ V1.95 Junction to Case Thermal Resistance （ Per IGBT） Forward Voltage IF=300A , VGE=0V, TJ=25℃ 1.45 Min. Diode-inverter Symbol VF 1500 A Max. 11.5 Eon Turn on Energy ELECTRICAL CHARACTERISTICS T C =25°C unless otherwise specified RthJC ISC Eoff tpsc≤6µS , VGE=15V TJ=125℃,VCC=360VShort Circuit Current TJ=150℃ TJ=25℃ Junction to Case Thermal Resistance （ Per Diode） Reverse Recovery Charge 600 400 Turn off Delay Time VCC=300V,IC=300A RG =1.1Ω, VGE=±15V, Inductive Load VCC=300V,IC=300A RG =1.1Ω, VGE=±15V, Inductive Load 1.65 TJ=150℃ Turn off Energy 120 TJ=25℃ 1.55 2.65 0.175 IF=300A , VR=300V dIF/dt=-3200A/μs TJ =150℃ Erec VCC=300V,IC=300A RG =1.1Ω, VGE=±15V, Inductive Load TJ=150℃ TJ=25℃ TJ=150℃ TJ=25℃ Turn on Delay Time Rise Time trr Reverse Recovery Time QRR All d ata sheet.com