MMG3004NT1_08 FREESCALE | Alldatasheet

Document overview

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Technical content

Features

  • Frequency: 400-2200 MHz
  • P1dB: 27 dBm @ 2140 MHz
  • Small-Signal Gain: 16 dB @ 2140 MHz
  • Third Order Output Intercept Point: 44 dBm @ 2140 MHz
  • Single 5 Volt Supply
  • Internally Prematched to 50 Ohms
  • RoHS Compliant
  • In Tape and Reel. T1 Suffix = 1000 Units per 16 mm, 13 inch Reel. 400-2200 MHz, 16 dB 27 dBm InGaP HBT CASE 1543-03 PQFN 5x5 PLASTIC

Table 1. Typical Performance (1) Table 2. Maximum Ratings

  1. For reliable operation, the junction temperature should not

Table 3. Thermal Characteristics (VDC = 5 Vdc, IDC = 250 mA, TC = 25°C) Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2005-2008. All rights reserved.

Table 4. Electrical Characteristics (VDC = 5 Vdc, 2140 MHz, TC = 25°C, 50 ohm system, in Freescale Application Circuit)

  1. For reliable operation, the junction temperature should not exceed 150 °C.

Table 5. Functional Pin Description

Description

RFin 2, 3, 4 RF input for the power amplifier. This pin is DC-coupled and requires a DC-blocking series capacitor. RFout/ VCC 10, 11, 12 RF output for the power amplifier. This pin is DC-coupled and requires a DC-blocking series capacitor. VCC 14 Collector voltage supply. VBA 16 Bias voltage supply. GND Backside Center Metal The center metal base of the PQFN package provides both DC and RF ground as well as heat sink contact for the power amplifier. Table 6. ESD Protection Characteristics Table 7. Moisture Sensitivity Level Figure 1. Pin Connections

50 OHM TYPICAL CHARACTERISTICS

Figure 2. Collector Current versus Bias Voltage Figure 3. MTTF versus Junction Temperature

50 OHM APPLICATION CIRCUIT: 900 MHz

Figure 4. 50 Ohm Test Circuit Schematic Table 8. 50 Ohm Test Circuit Component Designations and Values

Figure 5. 50 Ohm Test Circuit Component Layout

50 OHM TYPICAL CHARACTERISTICS: 900 MHz

Figure 6. Small-Signal Gain (S21) versus Figure 7. Input Return Loss (S11) versus Figure 8. Output Return Loss (S22) versus Figure 9. P1dB versus Frequency Figure 10. Third Order Output Intercept

1 MHz Tone Spacing

Figure 11. Noise Figure versus Frequency

Figure 12. IS-95 Adjacent Channel Power Ratio Figure 13. IS-95 Adjacent Channel Power Ratio

50 OHM APPLICATION CIRCUIT: 1900-2200 MHz

Figure 14. 50 Ohm Test Circuit Schematic Table 9. 50 Ohm Test Circuit Component Designations and Values

Figure 15. 50 Ohm Test Circuit Component Layout

50 OHM TYPICAL CHARACTERISTICS: 1900-2200 MHz

Figure 16. Small-Signal Gain (S21) versus Figure 17. Input Return Loss (S11) versus Figure 18. Output Return Loss (S22) versus Figure 19. P1dB versus Frequency Figure 20. Third Order Output Intercept Figure 21. Noise Figure versus Frequency

Figure 22. IS-95 Adjacent Channel Power Ratio Figure 23. IS-95 Adjacent Channel Power Ratio Figure 24. Single-Carrier W-CDMA Adjacent

Table 10. Common Emitter S-Parameters (VDC = 5 Vdc, IDC = 250 mA, TC = 25°C, 50 Ohm System)

Table 10. Common Emitter S-Parameters (VDC = 5 Vdc, IDC = 250 mA, TC = 25°C, 50 Ohm System) (continued)

Figure 25. Recommended Mounting Configuration

  1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE
  2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS

METAL GROUND LANDING PATTERN.

  1. REFER TO FREESCALE APPLICATION NOTE AN2467 FOR

ADDITIONAL PQFN PCB GUIDELINES.

Refer to the following documents to aid your design process. Application Notes

  • AN1955: Thermal Measurement Methodology of RF Power Amplifiers
  • AN3100: General Purpose Amplifier Biasing

REVISION HISTORY

The following table summarizes revisions to this document. Revision Date Description 2 Mar. 2007 • Replaced Case Outline 1543-02 with updated 1543-03, Issue C, p. 1, 16-18

  • Added VCC callout to Pin Connections 10, 11, and 12 in Fig. 1, Pin Connections, p. 3
  • Updated Part Numbers in Table 8, Component Designations and Values, 900 MHz, to RoHS compliant part numbers, p. 5
  • Corrected circuit board callouts, Vp to VBA and VCC to VSUPPLY, Fig. 5, 50 Ohm Test Circuit Component Layout, 900 MHz, p. 6
  • Removed IDC value due to its variability over temperature, Figs. 12-13, IS-95 Adjacent Channel Power Ratio versus Output Power, 900 MHz, p. 8
  • Updated Part Numbers in Table 9, Component Designations and Values, 1900-2200 MHz, to RoHS compliant part numbers, p. 9
  • Corrected circuit board callouts, Vp to VBA and VCC to VSUPPLY, Fig. 15, 50 Ohm Test Circuit Component Layout, 1900-2200 MHz, p. 10
  • Removed IDC value due to its variability over temperature, Figs. 22-23, IS-95 Adjacent Channel Power Ratio versus Output Power, 1900-2200 MHz, and Fig. 24, Single-Carrier W-CDMA Adjacent Channel Power Ratio versus Output Power, 1900-2200 MHz, p. 12
  • Replaced Table 10, S-Parameters, p. 13-15
  • Added Product Documentation and Revision History, p. 19 3 Mar. 2008 • Corrected Tape and Reel information from 12 mm, 7 inch Reel to 16 mm, 13 inch Reel, p. 1
  • Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings, p. 1
  • Corrected Fig. 24, Single-Carrier W-CDMA Adjacent Channel Power Ratio versus Output Power y-axis (ACPR) unit of measure to dBc, p. 12
  • Corrected S-Parameter table frequency column label to read “MHz” versus “GHz” and corrected frequency values from GHz to MHz, p. 13, 14, 15

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