MMG25CB120X6TC MACMIC | Alldatasheet
Document overview
- Manufacturer or author: fqgao
- PDF pages: 6
Technical content
APPLICATIONS
□ Motion/servo control □ Inverter and power supplies □ Solder Contact Technology, Rugged mounting due to integrated Mounting clamps □ Temperature sense included □ Free wheeling diodes with fast and soft reverse recovery MMG25CB120X6TC 1200V 25A Six-Pack Module RoHS Compliant July 2018 □ Substrate for Low Thermal Resistance □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current Preliminary PRODUCT FEATURES □ AC motor control Unit W Unit V A2S Power Dissipation Per IGBT 1200 IC Parameter/Test Conditions ICM 203 ValuesSymbol Parameter/Test Conditions VGES Repetitive Reverse Voltage TJ=25℃ Gate Emitter Voltage ±20 Repetitive Peak Forward Current Average Forward Current DC Collector Current TJ =125℃, t=10ms, VR=0V 110 TC=25℃, TJmax=175℃ ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) ATC=100℃, TJmax=175℃ TC=25℃, TJmax=175℃ Diode-inverter A ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) tp=1msIFRM I2t VRRM Symbol Values IGBT-inverter VCES tp=1ms Collector Emitter Voltage 1200 IF(AV) 25 TJ=25℃ V Repetitive Peak Collector Current Ptot MacMic Science & Technology Co., Ltd. Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Ω µC nF pF ns ns ns ns ns ns ns ns 270 VCC=600V,IC=25A, RG =30Ω, VGE=±15V, Inductive Load TJ=25℃ TJ=150℃ VCE=0V,VGE=±20V, TJ=25℃ TJ=150℃ 230 IC=25A, VGE=15V, TJ=125℃ VCE=1200V, VGE=0V, TJ=25℃ IGBT-inverter 190 0.15 1.9 Gate Charge TJ=150℃ Turn on Delay Time Rise Time VCC=600V,IC=25A, RG =30Ω, VGE=±15V, Inductive Load Reverse Transfer Capacitance VCE=25V, VGE=0V, f =1MHz TJ=25℃ Fall Time tr TJ=25℃ tf TJ=25℃ TJ=150℃ Turn off Delay Time Min. V td(on) Cres IGES Rgint VGE(th) Typ.Symbol Collector Emitter Saturation VoltageVCE(sat) 2.15 -400 5.8VCE=VGE, IC=0.8mA ICES Gate Leakage Current IC=25A, VGE=15V, TJ=150℃ IC=25A, VGE=15V, TJ=25℃ 6.5 Collector Leakage Current td(off) ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) 400 2.25 Qg Parameter/Test Conditions Max. Cies Integrated Gate Resistor Gate Emitter Threshold Voltage 5.0 1.85 2.25 Input Capacitance VCE=600V, IC=25A , VGE=15V MMG25CB120X6TC 210 mJ mJ mJ mJ mJ mJ K /W Unit ns A µC mJ K /W T J=125℃ 3.5 1.7 2.4 3.7 2.7 0.74 Forward Voltage 1.65 E rec Junction to Case Thermal Resistance （ Per Diode） V 1.0 1.1 IF=25A , VR=600V dIF/dt=-550A/μs TJ =150℃ Reverse Recovery Time VF Symbol ISC Parameter/Test Conditions Eoff TJ=25℃ 1.9 2.31.9 TJ=125℃ Junction to Case Thermal Resistance （ Per IGBT） ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) 2.55TJ=150℃ A Max. 0.66 100 TJ=150℃ Eon J Turn on Energy Turn off Energy QRR RthJC Min. Diode-inverter Typ. IF=25A , VGE=0V, TJ =150℃ IF=25A , VGE=0V, TJ =125℃ IRRM Reverse Recovery Energy trr IF=25A , VGE=0V, TJ =25℃ Short Circuit Current Reverse Recovery Charge tpsc≤10µS , VGE=15V TJ=150℃,VCC=600V 1.6 VCC=600V,IC=25A, RG =30Ω, VGE=±15V, Inductive Load 4.3 Max. Reverse Recovery Current TJ=25℃ RthJCD 450
Figure 2. Typical Output Characteristics IGBT-inverterFigure 1. Typical Output Characteristics IGBT-inverter