MMG225WB120B6TN MACMIC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
May 2015 Version 01 RoHS Compliant □ IGBT3 CHIP(Trench+Field Stop technology) □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Temperature sense included
APPLICATIONS
□ AC motor control □ Motion/servo control □ Inverter and power supplies □ Photovoltaic/Fuel cell Unit W Unit V KA2S □ Photovoltaic/Fuel cell IGBT-inverter ABSOLUTE MAXIMUM RATINGS T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Values VCES Collector Emitter Voltage TJ=25℃ 1200 V VGES Gate Emitter Voltage ±20 IC DC Collector Current TC=25℃ 325 ATC=80℃ 225 ICM Repetitive Peak Collector Current tp=1ms 450 Ptot Power Dissipation Per IGBT 1050 Diode-inverter ABSOLUTE MAXIMUM RATINGS T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Values VRRM Repetitive Reverse Voltage TJ=25℃ 1200 IF(AV) Average Forward Current TC=25℃ 225 A IFRM Repetitive Peak Forward Current tp=1ms 450 I2t TJ =125℃, t=10ms, VR=0V 9.1 MacMic Science & Technology Co., Ltd. Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com All d ata sheet.com
Ω µC nF nF ns ns ns ns ns ns ns MMG225WB120B6TN IGBT-inverter ELECTRICAL CHARACTERISTICS T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Min. Typ. Max. VGE(th) Gate Emitter Threshold Voltage VCE=VGE, IC=9mA 5.0 5.8 6.5 VVCE(sat) Collector Emitter Saturation Voltage chip IC=225A, VGE=15V, TJ=25℃ 1.7 2.15 IC=225A, VGE=15V, TJ=125℃ 2.0 ICES Collector Leakage Current VCE=1200V, VGE=0V, TJ=25℃ 1 VCE=1200V, VGE=0V, TJ=125℃ 5 IGES Gate Leakage Current VCE=0V,VGE=±15V, TJ=25℃ -400 400 Rgint Integrated Gate Resistor 3.3 Qg Gate Charge VCE=600V, IC=225A , VGE=±15V 2.1 Cies Input Capacitance VCE=25V, VGE=0V, f =1MHz 16 Cres Reverse Transfer Capacitance 0.75 td(on) Turn on Delay Time VCC=600V,IC=225A RG =3.3Ω, VGE=±15V, Inductive Load TJ=25℃ 160 TJ=125℃ 170 tr Rise Time TJ=25℃ 45 TJ=125℃ 50 td(off) Turn off Delay Time VCC=600V,IC=225A RG =3.3Ω, VGE=±15V, Inductive Load TJ=25℃ 460 TJ=125℃ 530 tf Fall Time TJ=25℃ 100 ns mJ mJ mJ mJ K /W Unit ns A mJ K /W Unit KΩ tf Fall Time TJ=125℃ 150 Eon Turn on Energy VCC=600V,IC=225A RG =3.3Ω, VGE=±15V, Inductive Load TJ=25℃ 9 TJ=125℃ 13.5 Eoff Turn off Energy TJ=25℃ 22.5 TJ=125℃ 33 ISC Short Circuit Current tpsc≤10µS , VGE=15V TJ=125℃,VCC=900V 900 A RthJC Junction to Case Thermal Resistance （ Per IGBT） 0.12 Diode-inverter ELECTRICAL CHARACTERISTICS T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Min. Typ. Max. VF Forward Voltage chip IF=225A , VGE=0V, TJ=25℃ 1.65 2.15 VIF=225A , VGE=0V, TJ=125℃ 1.65 trr Reverse Recovery Time IF=225A , VR=600V dIF/dt=-3600A/μs TJ =125℃ 200 IRRM Max. Reverse Recovery Current 180 Erec Reverse Recovery Energy 18 RthJCD Junction to Case Thermal Resistance （ Per Diode） 0.2 NTC CHARACTERISTICS T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Min. Typ. Max. R25 Resistance TC =25℃ 5 KB25/50 R2 = R25 exp [B25/50(1/T2 - 1/(298.15 K))] 3375 All d ata sheet.com
Figure 15. Package Outline