MMG200HB060B6EN MACMIC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
May 2015 Version 01 RoHS Compliant □ IGBT3 CHIP(Trench+Field Stop technology) □ High short circuit capability,self limiting short circuit current □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Low switching losses
APPLICATIONS
□ High frequency switching application □ Medical applications □ Motion/servo control □ UPS systems Unit W Unit V A2S □ UPS systems IGBT-inverter ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions Values VCES Collector Emitter Voltage TJ=25℃ 600 V VGES Gate Emitter Voltage ±20 IC DC Collector Current TC=25℃ 240 ATC=60℃ 200 ICM Repetitive Peak Collector Current tp=1ms 400 Ptot Power Dissipation Per IGBT 600 Diode-inverter ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions Values VRRM Repetitive Reverse Voltage TJ=25℃ 600 IF(AV) Average Forward Current TC=25℃ 200 A IFRM Repetitive Peak Forward Current tp=1ms 400 I2t TJ =125℃, t=10ms, VR=0V 3500 MacMic Science & Technology Co., Ltd. Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com 1 All d ata sheet.com
Ω µC nF pF ns ns ns ns ns ns ns MMG200HB060B6EN IGBT-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions Min. Typ. Max. VGE(th) Gate Emitter Threshold Voltage VCE=VGE, IC=3.2mA 4.9 5.8 6.5 VVCE(sat) Collector Emitter Saturation Voltage IC=200A, VGE=15V, TJ=25℃ 1.45 1.9 IC=200A, VGE=15V, TJ=125℃ 1.6 ICES Collector Leakage Current VCE=600V, VGE=0V, TJ=25℃ 1 VCE=600V, VGE=0V, TJ=125℃ 5 IGES Gate Leakage Current VCE=0V,VGE=±15V, TJ=25℃ -400 400 Rgint Integrated Gate Resistor 2 Qg Gate Charge VCE=300V, IC=200A , VGE=±15V 2.15 Cies Input Capacitance VCE=25V, VGE=0V, f =1MHz 13 Cres Reverse Transfer Capacitance 380 td(on) Turn on Delay Time VCC=300V,IC=200A RG =2.0Ω, VGE=±15V, Inductive Load TJ=25℃ 150 TJ=125℃ 160 tr Rise Time TJ=25℃ 30 TJ=125℃ 40 td(off) Turn off Delay Time VCC=300V,IC=200A RG =2.0Ω, VGE=±15V, Inductive Load TJ=25℃ 340 TJ=125℃ 370 tf Fall Time TJ=25℃ 60 ns mJ mJ mJ mJ K /W Unit ns A µC mJ K /W tf Fall Time TJ=125℃ 70 Eon Turn on Energy VCC=300V,IC=200A RG =2.0Ω, VGE=±15V, Inductive Load TJ=25℃ 1 TJ=125℃ 1.55 Eoff Turn off Energy TJ=25℃ 5.65 TJ=125℃ 6.90 ISC Short Circuit Current tpsc≤6µS , VGE=15V TJ=125℃,VCC=360V 1000 A RthJC Junction to Case Thermal Resistance （ Per IGBT） 0.25 Diode-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions Min. Typ. Max. VF Forward Voltage IF=200A , VGE=0V, TJ=25℃ 1.55 1.95 VIF=200A , VGE=0V, TJ=125℃ 1.50 trr Reverse Recovery Time IF=200A , VR=300V dIF/dt=-5700A/μs TJ =125℃ 170 IRRM Max. Reverse Recovery Current 230 QRR Reverse Recovery Charge 17 Erec Reverse Recovery Energy 5.2 RthJCD Junction to Case Thermal Resistance （ Per Diode） 0.45 2 2 All d ata sheet.com
Figure 15. Package Outline