MMG200B065PD6EN MACMIC | Alldatasheet
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Technical content
APPLICATIONS
□ Solar Applications □ UPS Systems □ 650V IGBT3 CHIP(Trench+Field Stop technology) □ Low saturation voltage and positive temperature coefficient □ Low switching losses and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Temperature sense included □ 3-Level-Applications MMG200B065PD6EN 650V 200A Three Level Inverter Module November 2017 Version 01 RoHS Compliant PRODUCT FEATURES Unit W Unit V A2S A2S AIFRM Repetitive Peak Forward Current(D5、D6) tp=1ms 400 I2t (D5、D6) TJ =125℃, t=10ms, VR=0V 2650 I2t (D1～D4) TJ =125℃, t=10ms, VR=0V 1450 IF(AV) Average Forward Current(D5、D6) 200 IF(AV) Average Forward Current(D1～D4) 150 AIFRM Repetitive Peak Forward Current(D1～D4) tp=1ms 300 Symbol Parameter/Test Conditions Values VRRM Repetitive Reverse Voltage TJ=25℃ 650 400 Ptot Power Dissipation Per IGBT TC=25℃, TJmax=175℃ 600 Diode(D1～D6) ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified ) IC DC Collector Current TC=25℃,TJmax=175℃ 235 ATC=60℃,TJmax=175℃ 200 ICM Repetitive Peak Collector Current tp=1ms VCES Collector Emitter Voltage TJ=25℃ 650 VVGES Gate Emitter Voltage ±20 IGBT(T1、T2、T3、T4) ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions Values MacMic Science & Technology Co., Ltd. Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com1 All d ata sheet.com
Ω µC nF nF ns ns ns ns ns ns ns ns80 420 t f Fall Time TJ=25℃ 60 TJ=150℃ td(off) Turn off Delay Time VCC=300V,IC=200A RG =2.7Ω, VGE=±15V, Inductive Load TJ=25℃ 390 TJ=150℃ 110 tr Rise Time TJ=25℃ 60 TJ=150℃ td(on) Turn on Delay Time VCC=300V,IC=200A RG =2.7Ω, VGE=±15V, Inductive Load TJ=25℃ 90 TJ=150℃ Cies Input Capacitance VCE=25V, VGE=0V, f =1MHz 12.4 Cres Reverse Transfer Capacitance 0.37 Qg Gate Charge VCE=300V, IC=200A , VGE=±15V 2.15 400 Rgint Integrated Gate Resistor 2 mA VCE=650V, VGE=0V, TJ=150℃ 5 IGES Gate Leakage Current VCE=0V,VGE=±15V, TJ=25℃ -400 1.7 ICES Collector Leakage Current VCE=650V, VGE=0V, TJ=25℃ 1 6.5 VVCE(sat) Collector Emitter Saturation Voltage IC=200A, VGE=15V, TJ=25℃ 1.45 1.9 IC=200A, VGE=15V, TJ=150℃ Symbol Parameter/Test Conditions Min. Typ. Max. VGE(th) Gate Emitter Threshold Voltage VCE=VGE, IC=3.2mA 4.9 5.8 MMG200B065PD6EN IGBT(T1、T2、T3、T4) ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) mJ mJ mJ mJ K /W Unit ns A µC mJ K /W ns A µC mJErec Reverse Recovery Energy(D5、D6) 5 QRR Reverse Recovery Charge(D5、D6) 20 trr Reverse Recovery Time(D5、D6) IF=200A , VR=300V dIF/dt=-2300A/μs TJ =150℃ 135 IRRM Max. Reverse Recovery Current(D5、D6) 148 1.95 V IF=200A , VGE=0V, TJ=150℃ 1.45 RthJCD Junction to Case Thermal Resistance（ Per Diode）(D1～D4) 0.6 VF Forward Voltage(D5、D6) IF=200A , VGE=0V, TJ=25℃ 1.55 QRR Reverse Recovery Charge(D1～D4) 13 Erec Reverse Recovery Energy(D1～D4) 3.5 IRRM Max. Reverse Recovery Current(D1～D4) 80 V IF=150A , VGE=0V, TJ=150℃ 1.45 trr Reverse Recovery Time(D1～D4) IF=150A , VR=300V dIF/dt=-1700A/μs TJ =150℃ 130 VF Forward Voltage(D1～D4) IF=150A , VGE=0V, TJ=25℃ 1.55 1.95 Diode(D1～D6) ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions Min. Typ. Max. A RthJC Junction to Case Thermal Resistance （ Per IGBT） 0.25 TJ=150℃ 7.1 ISC Short Circuit Current tpsc≤6µS , VGE=15V TJ=125℃,VCC=360V 1000 TJ=150℃ 3.1 Eoff Turn off Energy TJ=25℃ 5.5 Eon Turn on Energy VCC=300V,IC=200A RG =2.7Ω, VGE=±15V, Inductive Load TJ=25℃ 2.5 J mJ K /W Erec Reverse Recovery Energy(D5、D6) 5 RthJCD Junction to Case Thermal Resistance（ Per Diode）(D5、D6) 0.45 All d ata sheet.com
Symbol Parameter/Test Conditions Min. Typ. Max. Figure 1. Typical Output Characteristics IGBT Figure 2. Typical Output Characteristics IGBT