MMG15CB120X6TC MACMIC | Alldatasheet
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□ Motion/servo control □ Inverter and power supplies MMG15CB120X6TC 1200V 15A Six-Pack Module November 2019 Version 01 RoHS Compliant PRODUCT FEATURES □ IGBT CHIP(Trench+Field Stop technology) □ Substrate for Low Thermal Resistance □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Solder Contact Technology, Rugged mounting due to integrated Mounting clamps □ Temperature sense included □ AC motor control Unit W Unit V A2S IGBT-inverter ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions Values VCES Collector Emitter Voltage TJ=25℃ 1200 VVGES Gate Emitter Voltage ±20 IC DC Collector Current TC=25℃, TJmax=175℃ 27 ATC=105℃, TJmax=175℃ 15 ICM Repetitive Peak Collector Current tp=1ms 30 Ptot Power Dissipation Per IGBT TC=25℃, TJmax=175℃ 130 Diode-inverter ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions Values VRRM Repetitive Reverse Voltage TJ=25℃ 1200 IF(AV) Average Forward Current 15 AIFRM Repetitive Peak Forward Current tp=1ms 30 I2t TJ =125℃, t=10ms, VR=0V 18 MacMic Science & Technology Co., Ltd. Add #18 H Sh Zh L N Di i Ch h Ci Ji P i P R f Chi Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com All d ata sheet.com
µA mA nA Ω µC nF pF ns ns ns ns ns ns ns ns MMG15CB120X6TC IGBT-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions Min. Typ. Max. VGE(th) Gate Emitter Threshold Voltage VCE=VGE, IC=0.38mA 5.0 5.8 6.5 VVCE(sat) Collector Emitter Saturation Voltage IC=15A, VGE=15V, TJ=25℃ 1.85 2.25 IC=15A, VGE=15V, TJ=125℃ 2.15 IC=15A, VGE=15V, TJ=150℃ 2.25 ICES Collector Leakage Current VCE=1200V, VGE=0V, TJ=25℃ 100 VCE=1200V, VGE=0V, TJ=150℃ 10 IGES Gate Leakage Current VCE=0V,VGE=±20V, TJ=25℃ -400 400 Rgint Integrated Gate Resistor 0 Qg Gate Charge VCE=600V, IC=15A , VGE=15V 0.105 Cies Input Capacitance VCE=25V, VGE=0V, f =1MHz 1.1 Cres Reverse Transfer Capacitance 50 td(on) Turn on Delay Time VCC=600V,IC=15A RG =30Ω, VGE=±15V, Inductive Load TJ=25℃ 20 TJ=125℃ 25 TJ=150℃ 25 tr Rise Time TJ=25℃ 22 TJ=125℃ 24 TJ=150℃ 24 td( ff) Turn off Delay Time TJ=25℃ 180 TJ=125℃ 210 ns ns ns ns ns mJ mJ mJ mJ K /W Unit ns A µC mJ K /W td(off) Turn off Delay Time VCC=600V,IC=15A RG =30Ω, VGE=±15V, Inductive Load TJ=125℃ 210 TJ=150℃ 240 tf Fall Time TJ=25℃ 160 TJ=125℃ 195 TJ=150℃ 220 Eon Turn on Energy VCC=600V,IC=15A RG =30Ω, VGE=±15V, Inductive Load TJ=125℃ 1.71 TJ=150℃ 1.92 Eoff Turn off Energy TJ=125℃ 1.12 TJ=150℃ 1.21 ISC Short Circuit Current tpsc≤10µS , VGE=15V TJ=150℃,VCC=800V 60 A RthJC Junction to Case Thermal Resistance （ Per IGBT） 1.05 1.15 Diode-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions Min. Typ. Max. VF Forward Voltage IF=15A , VGE=0V, TJ =25℃ 2.1 2.65 VIF=15A , VGE=0V, TJ =125℃ 1.75 IF=15A , VGE=0V, TJ =150℃ 1.7 trr Reverse Recovery Time IF=15A , VR=600V dIF/dt=-800A/μs TJ =150℃ 220 IRRM Max. Reverse Recovery Current 25 QRR Reverse Recovery Charge 2.6 Erec Reverse Recovery Energy 0.75 RthJCD Junction to Case Thermal Resistance （ Per Diode） 1.75 1.9 All d ata sheet.com
Symbol Parameter/Test Conditions Min. Typ. Max. Figure 1. Typical Output Characteristics IGBT-inverter Figure 2. Typical Output Characteristics IGBT-inverter