MMG100W060XB6EN

MMG100W060XB6EN MACMIC | Alldatasheet

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APPLICATIONS

□ Motion/servo control □ Inverter and power supplies □ Industry standard package with insulated copper base plate and soldering pins for PCB mounting □ Temperature sense included □ AC motor control Rectifier+Brake+Inverter □ High level of integration □ 600V IGBT3 CHIP(Trench+Field Stop technology) □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery MMG100W060XB6EN 600V 100A PIM Module February 2017 Version 1 RoHS Compliant PRODUCT FEATURES Unit W Unit V A2SI2t TJ =125℃, t=10ms, VR=0V 1000 MacMic Science & Technology Co., Ltd. IF(AV) Average Forward Current 100 AIFRM Repetitive Peak Forward Current tp=1ms 200 Symbol Parameter/Test Conditions Values VRRM Repetitive Reverse Voltage TJ=25℃ 600 Ptot Power Dissipation Per IGBT TC=25℃, TJmax=175℃ 330 Diode-inverter ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) TC=70℃, TJmax=175℃ 100 ICM Repetitive Peak Collector Current tp=1ms 200 VVGES Gate Emitter Voltage ±20 IC DC Collector Current TC=25℃, TJmax=175℃ 125 A Symbol Parameter/Test Conditions Values VCES Collector Emitter Voltage TJ=25℃ 600 IGBT-inverter ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China All d ata sheet.com

Ω µC nF pF ns ns ns ns ns ns ns ns70 290 tf Fall Time TJ=25℃ 70 T =125℃ td(off) Turn off Delay Time VCC=300V,IC=100A RG =3.3Ω, VGE=±15V, Inductive Load TJ=25℃ 260 TJ=125℃ tr Rise Time TJ=25℃ 20 TJ=125℃ td(on) Turn on Delay Time VCC=300V,IC=100A RG =3.3Ω, VGE=±15V, Inductive Load TJ=25℃ 70 TJ=125℃ Cies Input Capacitance VCE=25V, VGE=0V, f =1MHz 6.2 Cres Reverse Transfer Capacitance 190 Qg Gate Charge VCE=300V, IC=100A , VGE=±15V 1.1 Rgint Integrated Gate Resistor 2 IGES Gate Leakage Current VCE=0V,VGE=±15V, TJ=25℃ -400 400 ICES Collector Leakage Current VCE=600V, VGE=0V, TJ=25℃ 1 VCE=600V, VGE=0V, TJ=125℃ VVCE(sat) Collector Emitter Saturation Voltage IC=100A, VGE=15V, TJ=25℃ 1.45 1.9 IC=100A, VGE=15V, TJ=125℃ 1.6 VGE(th) Gate Emitter Threshold Voltage VCE=VGE, IC=1.6mA 4.9 5.8 6.5 MMG100W060XB6EN IGBT-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions Min. Typ. Max. ns mJ mJ mJ mJ K /W Unit ns A µC mJ K /WR thJCD Junction to Case Thermal Resistance （ Per Diode） 0.8 QRR Reverse Recovery Charge 8 Erec Reverse Recovery Energy 2.25 IRRM Max. Reverse Recovery Current 150 V IF=100A , VGE=0V, TJ=125℃ 1.50 trr Reverse Recovery Time IF=100A , VR=300V dIF/dt=-5100A/μs TJ =125℃ 130 VF Forward Voltage IF=100A , VGE=0V, TJ=25℃ 1.55 1.95 Diode-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions Min. Typ. Max. A RthJC Junction to Case Thermal Resistance （ Per IGBT） 0.45 TJ=125℃ 3.35 ISC Short Circuit Current tpsc≤6µS , VGE=15V TJ=125℃,VCC=360V 500 TJ=125℃ 0.7 Eoff Turn off Energy TJ=25℃ 2.5 Eon Turn on Energy VCC=300V,IC=100A RG =3.3Ω, VGE=±15V, Inductive Load TJ=25℃ 0.3 TJ=125℃ All d ata sheet.com

V Unit V V µA mA K/ WR Junction to Case Thermal Resistance （ Per Diode） 04 6 IR Reverse Leakage Current VR=1600V, TJ=25℃ 50 VR=1600V, TJ=150℃ 1 VF Forward Voltage IF=100A , TJ =25℃ 1.1 1.3 IF=100A , TJ =150℃ 1.04 Diode-RECTIFIER ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions Min. Typ. Max. I2t TJ=45℃, t=10ms, 50Hz 5510 A2STJ=45℃, t=8.3ms, 60Hz 5508 R.M.S. Current at rectifier output 150 IFSM Non Repetitive Surge Forward Current TJ=45℃, t=10ms, 50Hz 1050 TJ=45℃, t=8.3ms, 60Hz 1151 IF(AV) Average Forward Current Per Diode TC=80℃ A IFRMS R.M.S. Forward Current Per Diode 125 IRMS Diode-RECTIFIER ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions Values VRRM Repetitive Reverse Voltage TJ=25℃ 1600 MMG100W060XB6EN K /W Unit W Unit V A2SI2t TJ=125℃, t=10ms, VR=0V 330 IF(AV) Average Forward Current 50 AIFRM Repetitive Peak Forward Current tp=1ms 100 ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions Values VRRM Repetitive Reverse Voltage TJ=25℃ 600 150 Ptot Power Dissipation Per IGBT TC=25℃, TJmax=175℃ 250 Diode-Brake chopper IC DC Collector Current TC=25℃, TJmax=175℃ 95 ATC=70℃, TJmax=175℃ 75 ICM Repetitive Peak Collector Current tp=1ms VCES Collector Emitter Voltage TJ=25℃ 600 VVGES Gate Emitter Voltage ±20 IGBT-Brake chopper ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions Values RthJCD Junction to Case Thermal Resistance （ Per Diode） 0.46 All d ata sheet.com

Ω µC nF pF ns ns ns ns ns ns ns ns70 240 tf Fall Time TJ=25℃ 60 T =125℃ td(off) Turn off Delay Time VCC=300V,IC=75A RG =5.1Ω, VGE=±15V, Inductive Load TJ=25℃ 210 TJ=125℃ tr Rise Time TJ=25℃ 20 TJ=125℃ td(on) Turn on Delay Time VCC=300V,IC=75A RG =5.1Ω, VGE=±15V, Inductive Load TJ=25℃ 25 TJ=125℃ Cies Input Capacitance VCE=25V, VGE=0V, f =1MHz 4.6 Cres Reverse Transfer Capacitance 145 Qg Gate Charge VCE=300V, IC=75A , VGE=±15V 0.8 Rgint Integrated Gate Resistor 0 IGES Gate Leakage Current VCE=0V,VGE=±15V, TJ=25℃ -400 400 ICES Collector Leakage Current VCE=600V, VGE=0V, TJ=25℃ 1 VCE=600V, VGE=0V, TJ=125℃ VVCE(sat) Collector Emitter Saturation Voltage IC=75A, VGE=15V, TJ=25℃ 1.45 1.9 IC=75A, VGE=15V, TJ=125℃ 1.6 VGE(th) Gate Emitter Threshold Voltage VCE=VGE, IC=1.2mA 4.9 5.8 6.5 ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions Min. Typ. Max. MMG100W060XB6EN IGBT-Brake chopper ns mJ mJ mJ mJ K /W Unit A µC mJ K /W Erec Reverse Recovery Energy 0.5 RthJCD Junction to Case Thermal Resistance (Per Diode) 1.2 QRR Reverse Recovery Charge 2.85 V IF=50A , VGE=0V, TJ=125℃ 1.50 IRRM Max. Reverse Recovery Current IF=50A , VR=300V dIF/dt=-900A/μs TJ =125℃ VF Forward Voltage IF=50A , VGE=0V, TJ =25℃ 1.55 1.95 Diode-Brake chopper ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions Min. Typ. Max. A RthJC Junction to Case Thermal Resistance （ Per IGBT） 0.6 TJ=125℃ 2.8 ISC Short Circuit Current tpsc≤6µS , VGE=15V TJ=125℃,VCC=360V 380 TJ=125℃ 0.5 Eoff Turn off Energy TJ=25℃ 2.4 Eon Turn on Energy VCC=300V,IC=75A RG =5.1Ω, VGE=±15V, Inductive Load TJ=25℃ 0.35 TJ=125℃ All d ata sheet.com

Figure 18. Package Outline