MMG100J120U6T4N MACMIC | Alldatasheet
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Technical content
APPLICATIONS
□ Free wheeling diodes with fast and soft reverse recovery □ Popular SOT-227 Package □ Motion/servo control □ Inverter and power supplies □ Fast switching and short tail current MMG100J120U6T4N 1200V 100A IGBT Module RoHS Compliant March 2015 □ IGBT4 Chip(Trench+Field Stop technology) □ Low saturation voltage and positive temperature coefficient □ Low switching losses Preliminary PRODUCT FEATURES □ AC motor control Unit W Unit V A2S Power Dissipation Per IGBT IC VCES Values ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) 555 ±20 VRRM Symbol 1900 150 TC=25℃,TJmax=175℃ IF(AV) Ptot Diode A TJ =125℃, t=10ms, VR=0V Gate Emitter Voltage A Parameter/Test Conditions Values 200 Repetitive Reverse Voltage 100 tp=1ms TJ=25℃ 1200 TC=100℃,TJmax=175℃ ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) tp=1msIFRM I2t V Repetitive Peak Collector Current Collector Emitter Voltage Average Forward Current IGBT TJ=25℃ VGES TC=25℃,TJmax=175℃ 1200 200 100 ICM Parameter/Test ConditionsSymbol DC Collector Current Repetitive Peak Forward Current MacMic Science & Technology Co., Ltd. Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com1 All d ata sheet.com
µA mA nA Ω µC nF nF ns ns ns ns ns ns ns ns V CE=1200V, VGE=0V, TJ=25℃ 130 6.3 TJ=125℃ Input CapacitanceCies 0.8 7.5 2.05 VCE=25V, VGE=0V, f =1MHz TJ=25℃ VCC=600V,IC=100A RG =1.6Ω, VGE=±15V, Inductive Load td(off) tf Fall Time TJ=25℃ 150 TJ=125℃ Turn off Delay Time 300 TJ=125℃ TJ=125℃ TJ=25℃ Max. MMG100J120U6T4N IGBT ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Qg 6.4 Min. IC=100A, VGE=15V, TJ=125℃ 1.75 5.2 2.15IC=100A, VGE=15V, TJ=25℃ 5.8 Parameter/Test Conditions Typ. 0.27 380 Rgint VGE(th) Symbol VCE=VGE, IC=3.8mA IGES Gate Leakage Current VCE=0V,VGE=±15V, TJ=25℃ Gate Emitter Threshold Voltage Gate Charge 100 TJ=25℃ VCE=1200V, VGE=0V, TJ=125℃ -400 400 VVCE(sat) Collector Emitter Saturation Voltage ICES Collector Leakage Current VCE=600V, IC=100A , VGE=±15V td(on) Turn on Delay Time VCC=600V,IC=100A RG =1.6Ω, VGE=±15V, Inductive Loadtr Rise Time Integrated Gate Resistor Cres Reverse Transfer Capacitance mJ mJ mJ mJ K /W Unit A µC mJ K /W 2.151.75 9.5 ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) 0.48 1.65 Min. J RthJCD Junction to Case Thermal Resistance （ Per Diode） IF=100A , VGE=0V, TJ=125℃ Symbol Max.Typ. Reverse Recovery Charge IRRM QRR Max. Reverse Recovery Current Parameter/Test Conditions IF=100A , VR=600V dIF/dt=-2800A/μs TJ =125℃Reverse Recovery EnergyErec IF=100A , VGE=0V, TJ=25℃VF 105 Diode Forward Voltage V Eon Turn on Energy VCC=600V,IC=100A RG =1.6Ω, VGE=±15V, Inductive Load TJ=25℃ 6.5 TJ=125℃ Eoff 400 Turn off Energy TJ=25℃ 6.0 TJ=125℃ 9.0 A RthJC Junction to Case Thermal Resistance （ Per IGBT） 0.27 ISC Short Circuit Current tpsc≤10µS , VGE=15V TJ=150°C,VCC=800V 2 2 All d ata sheet.com
Figure 13. Package Outline