MMG100CE065PD6TC MACMIC | Alldatasheet
Document overview
- Manufacturer or author: fqgao
- PDF pages: 6
Technical content
APPLICATIONS
□ Temperature sense included □ Solar Applications □ UPS Systems □ Free wheeling diodes with fast and soft reverse recovery MMG100CE065PD6TC 650V 100A Three Level Inverter Module RoHS Compliant December 2019 □ 650V IGBT CHIP(Trench+Field Stop technology) □ Low switching losses and short tail current □ Low saturation voltage and positive temperature coefficient Preliminary PRODUCT FEATURES □ 3-Level-Applications Unit W Unit V A2S Power Dissipation Per IGBT Symbol 116 Gate Emitter Voltage IC Parameter/Test Conditions VGES 650 Values DC Collector Current 100 ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) ValuesParameter/Test Conditions ICM 300 Repetitive Reverse Voltage A A TJ=25℃ 200 TC=25℃,TJmax=175℃ 100 200 TC=58℃,TJmax=175℃ TC=25℃,TJmax=175℃ TJ =125℃, t=10ms, VR=0V 1800 Symbol ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) tp=1msIFRM I2t V Repetitive Peak Collector Current IGBT(T1、T2、T3、T4) TJ=25℃ ±20 VCES tp=1ms Collector Emitter Voltage 650 IF(AV) Ptot VRRM Repetitive Peak Forward Current Average Forward Current MacMic Science & Technology Co., Ltd. Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com1
Ω µC nF pF ns ns ns ns ns ns ns ns mA VCC=300V,IC=100A RG =5.1Ω, VGE=±15V, Inductive Load 270TJ=150℃ TJ=150℃ TJ=150℃ 0.58 290 400 TJ=25℃ TJ=150℃ 42 6.6 Turn off Delay Time VCC=300V,IC=100A RG =5.1Ω, VGE=±15V, Inductive Load Turn on Delay Time Rise Time ICES td(on) tr TJ=25℃ Cres IGES Reverse Transfer Capacitance Collector Emitter Saturation Voltage IGBT(T1、T2、T3、T4) VCE(sat) IC=100A, VGE=15V, TJ=150℃ Min. Max. 6.5VGE(th) Gate Leakage Current Integrated Gate Resistor 1.8 5.8 Parameter/Test Conditions ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol V Typ. Qg 1.55 2 VCE=VGE, IC=1.6mAGate Emitter Threshold Voltage VCE=650V, VGE=0V, TJ=150℃ -400 4.9 tf TJ=25℃ VCE=0V,VGE=±20V, TJ=25℃ Cies Rgint Collector Leakage Current Input Capacitance VCE=300V, IC=100A , VGE=15V TJ=25℃ VCE=25V, VGE=0V, f =1MHz Gate Charge 220 Fall Time VCE=650V, VGE=0V, TJ=25℃ IC=100A, VGE=15V, TJ=25℃ td(off) MMG100CE065PD6TC mJ mJ mJ mJ K /W Unit ns A µC mJ K /W Forward Voltage 1.45 J TJ=25℃ Junction to Case Thermal Resistance （ Per IGBT） trr 0.6 IF=100A , VR=300V dIF/dt=-3000A/μs TJ =150℃ Junction to Case Thermal Resistance （ Per Diode） V 2.15 0.5 IF=100A , VGE=0V, TJ=150℃ Erec Reverse Recovery Time Symbol ISC tpsc≤6µS , VGE=15V TJ=125℃,VCC=360V Turn off Energy Parameter/Test Conditions Eoff Max. 0.45 1.75 500 1.95 Min. TJ=150℃ Eon 8.1 Turn on Energy ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) TJ=150℃ A IRRM VCC=300V,IC=100A RG =5.1Ω, VGE=±15V, Inductive Load Short Circuit Current 115 IF=100A , VGE=0V, TJ=25℃ QRR 2.15 1.7 Max. Reverse Recovery Current Typ. RthJCD 2.4 VF Reverse Recovery Charge Reverse Recovery Energy TJ=25℃ 110 RthJC 3.05