MMFTN138 SEMTECH_ELEC | Alldatasheet
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Dated: 01/06/2006 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) MMFTN138 N-Channel Logic Level Enhancement Mode Field Effect Transistor for low voltage, low current switching applications Absolute Maximum Ratings (T a = 25 OC unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage V DSS 50 V Drain-Gate Voltage (RGS ≤ 20 KΩ) V DGR 50 V Gate-Source Voltage - Continuous Gate-Source Voltage - Non-Repetitive (TP < 50 µs) VGSS ± 20 ± 40 V Drain Current - Continuous Drain Current - Pulsed ID 220 880 mA Total Power Dissipation P tot 360 mW Operating and Storage Temperature Range T j, Ts - 55 to + 150 OC Thermal Characteristics Parameter Symbol Value Unit Thermal Resistance from Juntion to Ambient R θJA 350 K/W 1. Gate 2. Source 3. Drain SOT-23 Plastic Package Source Gate Drain
Dated: 01/06/2006 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) MMFTN138 Characteristics at Ta = 25 OC unless otherwise specified Parameter Symbol Min. Max. Unit Drain-Source Breakdown Voltage at ID = 250 µA V(BR)DSS 50 - V Drain-Source Leakage Current a t VDS = 50 V at VDS = 30 V IDSS 500 100 nA Gate-Source Leakage Current a t VGS = ± 20 V IGSS - ± 100 nA Gate-Source Threshold Voltage a t VGS = VDS, ID = 1 mA VGS(th) 0.8 1.6 V Drain-Source On-State Resistance a t VGS = 10 V, ID = 220 mA at VGS = 4.5 V, ID = 220 mA RDS(on) 3.5 Ω Forward Transconductance a t V DS = 10 V, ID = 220 mA gFS 0.12 - S Input Capacitance a t V DS = 25 V, f = 1 MHz Ciss - 60 pF Output Capacitance a t V DS = 25 V, f = 1 MHz Coss - 25 pF Reverse Transfer Capacitance a t V DS = 25 V, f = 1 MHz Crss - 10 pF Turn-On Delay Time a t V DD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω td(on) - 8 ns Turn-On Rise Time a t V DD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω tr - 12 ns Turn-Off Delay Time a t V DD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω td(off) - 16 ns Turn-Off Fall Time a t V DD = 30 V, ID = 290 mA, VGS = 10 V, RG = 50 Ω tf - 22 ns Drain-Source Diode Characteristics and Maximum Ratings Parameter Symbol Min. Max. Unit Maximum Continuous Source Current IS - 220 mA Maximum Pulse Source Current ISM - 880 mA Drain-Source Diode Forward Voltage a t IS = 440 mA VGD - 1.4 V