MMFTN123 SEMTECH_ELEC | Alldatasheet
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Dated: 03/06/2006 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) MMFTN123 N-Channel Logic Level Enhancement Mode Field Effect Transistor Absolute Maximum Ratings (T a = 25 OC unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage V DSS 100 V Gate-Source Voltage V GSS ± 20 V Drain Current I D 170 mA Peak Drain Current I DM 680 mA Total Power Dissipation P tot 360 mW Junction Temperature T j 150 OC Storage Temperature Range T stg -65 to +150 OC Thermal Characteristics Parameter Symbol Value Unit Thermal Resistance from Juntion to Ambient R thj-a 500 1) K/W 1) Device mounted on a printed-circuit board. 1. Gate 2. Source 3. Drain SOT-23 Plastic Package Source Gate Drain
Dated: 03/06/2006 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) MMFTN123 Characteristics at Ta = 25 OC unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage at ID = 250 µA V(BR)DSS 100 - - V Gate-Source Threshold Voltage a t VGS = VDS, ID = 1 mA VGSth 0.8 - 2 V Drain-Source Leakage Current a t VDS = 100 V at VDS = 20 V IDSS µA nA Gate-Source Leakage Current a t V GS = ± 20 V IGSS - - ± 50 nA Drain-Source On-State Resistance a t VGS = 10 V, ID = 170 mA at VGS = 4.5 V, ID = 170 mA RDS(ON) Ω Input Capacitance a t V DS = 25 V, f = 1 MHz Ciss - 73 - pF Output Capacitance a t V DS = 25 V, f = 1 MHz Coss - 7 - pF Reverse Transfer Capacitance a t V DS = 25 V, f = 1 MHz Crss - 3.4 - pF Turn-On Delay Time a t V DD = 30 V, ID = 280 mA, VGS = 10 V, RG = 6 Ω td(on) - - 3.4 ns Turn-On Rise Time a t V DD = 30 V, ID = 280 mA, VGS = 10 V, RG = 6 Ω tr - - 18 ns Turn-Off Delay Time a t V DD = 30 V, ID = 280 mA, VGS = 10 V, RG = 6 Ω td(off) - - 31 ns Turn-Off Fall Time a t V DD = 30 V, ID = 280 mA, VGS = 10 V, RG = 6 Ω tf - - 5 ns