MMFTN0253K

MMFTN0253K HUIXIN | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 6

Technical content

Features

• Built-in G-S Protection Diode
• Typical ESD Protection HBM Class 1B

Applications

• Portable appliances
• Battery management Absolute Maximum Ratings (at Ta = 25℃ unless otherwise specified ) Parameter Symbol Value Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ± 12 V Drain Current I D 2.5 A Peak Drain Current, Pulsed 1) I DM 10 A Power Dissipation 2) P tot 1 W Operating Junction Temperature T j 150 ℃ Storage Temperature Range T stg - 55 to + 150 ℃ Thermal Characteristics Parameter Symbol Max. Unit Thermal Resistance from Junction to Ambient 2) R θJA 125 ℃/W 1) Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%,Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. 2) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. Classification Voltage Range(V) 0A < 125 0B 125 to < 250 1A 250 to < 500 1B 500 to < 1000 1C 1000 to < 2000 2 2000 to < 4000 3A 4000 to < 8000 3B ≥ 8000 1. Gate 2. Source 3. Drain SOT-23 Plastic Package Source Gate Drain 6GMK1UL6

Characteristics at Ta = 25℃ unless otherwise specified Parameter Symbol Min. Typ. Max. Unit STATIC PARAMETERS Drain-Source Breakdown Voltage a t ID = 250 µA BVDSS 30 - - V Drain-Source Leakage Current a t VDS = 30 V IDSS - - 1 µA Gate Leakage Current a t VGS = ± 10 V IGSS - - ± 10 µA Gate-Source Threshold Voltage a t VDS = VGS, ID = 250 µA VGS(th) 0.5 - 1.5 V Drain-Source On-State Resistance a t VGS = 4.5 V, ID = 2.5 A at VGS = 4 V, ID = 2.5 A at VGS = 2.5 V, ID = 2.5 A RDS(on) 133 mΩ DYNAMIC PARAMETERS Gate Resistance at V GS = 0 V, VDS = 0 V, f = 1 MHz Rg - 1.5 - K Ω Input Capacitance a t VGS = 0 V, VDS = 15 V, f = 1 MHz Ciss - 387 - pF Output Capacitance a t VGS = 0 V, VDS = 15 V, f = 1 MHz Coss - 37 - pF Reverse Transfer Capacitance a t VGS = 0 V, VDS = 15 V, f = 1 MHz Crss - 10 - pF Total Gate Charge at V GS = 10 V, VDS = 15 V, ID = 2.5 A at VGS = 4.5 V, VDS = 15 V, ID = 2.5 A Qg 6.8 nC Gate-Source Charge at V GS = 10 V, VDS = 15 V, ID = 2.5 A Qgs - 1.2 - nC Gate-Drain Charge at V GS = 10 V, VDS = 15 V, ID = 2.5 A Qgd - 2.6 - nC Turn-On Delay Time a t VDD = 15 V, VGS = 10 V, ID = 1 A, Rg = 1 Ω td(on) - 1138 - nS Turn-On Rise Time a t VDD = 15 V, VGS = 10 V, ID = 1 A, Rg = 1 Ω tr - 68 - nS Turn-Off Delay Time a t VDD = 15 V, VGS = 10 V, ID = 1 A, Rg = 1 Ω td(off) - 892 - nS Turn-Off Fall Time a t VDD = 15 V, VGS = 10 V, ID = 1 A, Rg = 1 Ω tf - 98 - nS Body-Diode PARAMETERS Diode Forward Voltage a t IS = 1 A, VGS = 0 V VSD - - 1.2 V Body-Diode Continuous Current IS - - 2.5 A Body Diode Reverse Recovery Time a t IS = 2.5 A, di/dt = 100 A / µs trr - 607 - ns Body Diode Reverse Recovery Charge a t IS = 2.5 A, di/dt = 100 A / µs Qrr - 3.3 - µC 6GMK2UL6

Electrical Characteristics Curves Fig. 3 on-Resistance vs. Drain Current Fig. 2 Typical Transfer Characteristics Fig. 1 Typical Output Characteristics Fig. 4 on-Resistance vs. Gate-Source Voltage Fig. 6 Typical Forward Characteristics Fig. 5 on-Resistance vs.Tj 6GMK3UL6

Fig. 7 Typical Junction Capacitance Fig. 11 Gate Charge Fig. 10 Gate Threshold Variation vs. Tj Fig. 8 Drain-Source Leakage Current vs. Tj Fig. 9 V(BR)DSS vs. Junction Temperature 6GMK4UL6

Fig.1-1 Switching times test circuit Fig.1-2 Switching Waveform Fig.2-1 Gate charge test circuit Fig.2-2 Gate charge waveform Marking information " TA " = Part No. " YM " = Date Code Marking " Y " = Year " M " = Month Font type: Arial TA 6GMK5UL6

Plastic surface mounted package; 3 leads SOT-23