MMFT6N03HD MOTOROLA | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

1Motorola TMOS Power MOSFET Transistor Device Data /C0080/C0114/C0111/C0100/C0117/C0099/C0116 /C0080/C0114/C0101/C0118/C0105/C0101/C0119 /C0072/C0068/C0084/C0077/C0079/C0083 /C0083/C0105/C0110/C0103/C0108/C0101 /C0078/C0045/C0067/C0104/C0097/C0110/C0110/C0101/C0108 /C0070/C0105/C0101/C0108/C0100 /C0069/C0102/C0102/C0101/C0099/C0116 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114 Medium Power Surface Mount Products These medium power SOT–223 devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These surface mount MOSFETs feature low R DS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. SOT–223 HDTMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in peripheral products such as printers and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

  • Low RDS(on) Provides Higher Efficiency and Extends Battery Life
  • Logic Level Gate Drive — Can Be Driven by Logic ICs
  • SOT–223 Saves Board Space and Height
  • Diode Is Characterized for Use In Bridge Circuits
  • IDSS Specified at Elevated Temperature
  • Avalanche Energy Specified
  • Mounting Information for SOT–223 Package Provided
  • Use MMFT5N02HDT1 to order the 7 inch/1000 unit reel Use MMFT5N02HDT3 to order the 13 inch/4000 unit reel MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–to–Source Voltage VDSS 30 Vdc Drain–to–Gate Voltage (RGS = 1.0 MΩ ) VDGR 30 Vdc Gate–to–Source Voltage – Continuous VGS ± 20 Vdc Drain Current – Continuous(1) Drain Current – Continuous @ 100°C (1) Drain Current – Single Pulse (tp ≤ 10 µs)(1) ID ID IDM 6.0 3.7 Adc Apk Total PD @ TA = 25°C (1) Total PD @ TA = 25°C (2) PD 1.8 0.8 Watts Operating and Storage Temperature Range TJ, Tstg –55 to 150 °C Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 6.0 Apk, L = 72 mH) EAS 1300 mJ Thermal Resistance – Junction to Ambient(1) – Junction to Ambient(2) R θJA R θJA 156 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C (1) When mounted on 1” sq. Drain pad on FR–4 bd material (2) When mounted on minimum recommended Drain pad on FR–4 bd material This document contains information on a new product. Specifications and information herein are subject to change without notice. HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Order this document through Power Products Marketing /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA /C0077/C0077/C0070/C0084/C0054/C0078/C0048/C0051/C0072/C0068 TMOS POWER FET

6.0 AMPERES

30 VOLTS

R DS(on) = 0.050 OHM D S G CASE 318E–04, Style 3 TO–261AA  Motorola, Inc. 1996

/C0077/C0077/C0070/C0084/C0054/C0078/C0048/C0051/C0072/C0068

2 Motorola TMOS Power MOSFET Transistor Device Data

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) V(BR)DSS 30 — — Vdc Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS 100 µAdc Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS — — 100 nAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS , ID = 250 µAdc) VGS(th) 1.0 1.5 2.0 Vdc Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 5.5 Adc) (VGS = 4.5 Vdc, ID = 4.3 Adc) R DS(on) 0.040 0.053 0.050 0.060 Ohm Forward Transconductance (VDS = 10 Vdc, ID = 5.5 Adc) gFS 6.0 9.5 — mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 25 Vdc V 0 Vdc C iss — 420 — pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) C oss — 190 — Transfer Capacitance f = 1.0 MHz) C rss — 65 — SWITCHING CHARACTERISTICS (2) Turn–On Delay Time (V 15 Vd I 6 0 Ad td(on) — 6.0 15 ns Rise Time (VDD = 15 Vdc, ID = 6.0 Adc, VGS =1 0V d c tr — 21 40 Turn–Off Delay Time VGS = 10 Vdc, R G = 6.0 Ω ) td(off) — 25 50 Fall Time G ) tf — 30 60 Gate Charge (V 24 Vd I 6 0 Ad Q T — 15 30 nC (VDS = 24 Vdc, ID = 6.0 Adc, Q 1 — 2.0 —( DS , D , VGS = 10 Vdc) Q 2 — 4.3 — Q 3 — 4.3 — SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (1) (IS = 6.0 Adc, VGS = 0 Vdc) (IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C) VSD 0.92 0.80 1.2 Vdc Reverse Recovery Time (I 6 0 Ad V 0 Vd trr — 28 — ns (IS = 6.0 Adc, VGS = 0 Vdc, ta — 13 —(S , GS , dIS/dt = 100 A/µs) tb — 15 — Reverse Recovery Stored Charge Q RR — 0.020 — µC (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature.

/C0077/C0077/C0070/C0084/C0054/C0078/C0048/C0051/C0072/C0068 3Motorola TMOS Power MOSFET Transistor Device Data PACKAGE DIMENSIONS CASE 318E–04 ISSUE H H S F A B D G L 12 3 0.08 (0003) C M K J DIM A MIN MAX MIN MAX MILLIMETERS 0.249 0.263 6.30 6.70 INCHES B 0.130 0.145 3.30 3.70 C 0.060 0.068 1.50 1.75 D 0.024 0.035 0.60 0.89 F 0.115 0.126 2.90 3.20 G 0.087 0.094 2.20 2.40 H 0.0008 0.0040 0.020 0.100 J 0.009 0.014 0.24 0.35 K 0.060 0.078 1.50 2.00 L 0.033 0.041 0.85 1.05 M 0 10 0 10 S 0.264 0.287 6.70 7.30 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. /C0095/C0095/C0095 /C0095 STYLE 3: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN

/C0077/C0077/C0070/C0084/C0054/C0078/C0048/C0051/C0072/C0068

4 Motorola TMOS Power MOSFET Transistor Device Data

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;JAPAN : Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–54543–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315 INTERNET : http://Design–NET.com 51 Ting Kok R oad, Tai Po, N.T., Hong Kong. 852–26629298 MMFT6N03HD/D /C0042/C0077/C0077/C0070/C0084/C0054/C0078/C0048/C0051/C0072/C0068/C0047/C0068/C0042