MMFT65R090RTH

MMFT65R090RTH MGCHIP | Alldatasheet

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Aug. 2024. Revision 1.4 1 Magnachip Semiconductor Ltd. Parameter Value Unit VDS @ Tj,max 700 V RDS(on),max 0.090 Ω VTH,typ 3.0 V ID 35 A Qg,typ 78.9 nC Order Code Marking Temp. Range Package Packing RoHS Status MMFT65R090RTH T65R090R -55 ~ 150℃ TO-220FT Tube Compliant MMFT65R090RTH 650V 0.09Ω N-channel MOSFET  Features  Low power loss by high speed switching and low on-resistance  Excellent ESD robustness  100% avalanche tested  Green package – Pb free plating, halogen free  Key Parameters  Ordering Information  Applications  Premium OLED TV  PFC power supply stages  Switching applications  Adapter  Package & Internal Circuit  Description MMFT65R090R is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI and low switching loss as well as excellent ESD capability to designers. G D S

Aug. 2024. Revision 1.4 2 Magnachip Semiconductor Ltd. Parameter Symbol Rating Unit Note Drain – Source voltage VDSS 650 V Gate – Source voltage VGSS ±30 V Continuous drain current1) ID

35 A TC=25℃

22 A TC=100℃

Pulsed drain current2) IDM 105 A Power dissipation PD 38.9 W Single - pulse avalanche energy3) EAS 900 mJ MOSFET dv/dt ruggedness dv/dt 50 V/ns Continuous diode forward current dv/dt 35 A Diode dv/dt ruggedness4) Tstg 50 V/ns Storage temperature Tj -55 ~150 ℃ Maximum operating junction temperature VDSS 150 ℃ 1) ID limited by maximum junction temperature 2) Pulse width tP limited by Tj,max 3) IAS : 9 A 4) ISD ≤ ID, VDS peak ≤ 400V, Tj=25oC Parameter Symbol Value Unit Thermal resistance, junction-case max RthJC 3.21 ℃/W Thermal resistance, junction-ambient max RthJA 73.7 ℃/W  Thermal Characteristics  Absolute Maximum Rating (Tc=25℃ unless otherwise specified)

Aug. 2024. Revision 1.4 3 Magnachip Semiconductor Ltd. Parameter Symbol Min. Typ. Max. Unit Test Condition Drain – Source breakdown voltage V(BR)DSS 650 - - V VGS = 0V, ID = 1mA Gate threshold voltage VGS(th) 2.0 3.0 4.0 V VDS = VGS, ID = 250μA Zero gate voltage drain current IDSS - - 1.0 μA VDS = 650V, VGS = 0V Gate leakage current IGSS - - 100 nA VGS = ±30V, VDS = 0V Drain-Source on state resistance RDS(ON) - 0.079 0.090 Ω VGS = 10V, ID = 17.5A Parameter Symbol Min. Typ. Max. Unit Test Condition Input capacitance Ciss - 2857 - pF VDS = 400V, VGS = 0V, f = 400kHz Output capacitance Coss - 71 - Reverse transfer capacitance Crss - 9.6 - Effective output capacitance energy related6) Co(er) - 122 - VDS = 0V to 520V, VGS = 0V, f = 400kHz Turn on delay time td(on) - 44 - ns VGS=10V, RG=25Ω VDD=325V, ID=35A Rise time tr - 84 - Turn off delay time td(off) - 252 - Fall time tf - 61 - Total gate charge Qg - 78.9 - nC VGS=10V, VDD=520V, ID=35A Gate – Source charge Qgs - 12.7 - Gate – Drain charge Qgd - 34.2 - Gate resistance RG - 5.4 - Ω VGS = 0V, f = 1.0MHz 5) Co(er) is a capacitance that gives the same stored energy as Coss while VDS is rising from 0V to 80% V(BR)DSS  Dynamic Characteristics (Tc=25 oC unless otherwise specified)  Static Characteristics (Tc=25℃ unless otherwise specified)

Aug. 2024. Revision 1.4 4 Magnachip Semiconductor Ltd. Parameter Symbol Min. Typ. Max. Unit Test Condition Continuous Diode Forward Current ISD - - 35 A Diode forward voltage VSD - - 1.4 V ISD = 35A, VGS = 0V Reverse recovery time trr - 573 - ns ISD = 35A di/dt = 100A/μs VDD = 100V Reverse recovery charge Qrr - 12 - μC Reverse recovery current Irrm - 41.9 - A  Reverse Diode Characteristics (Tc=25℃ unless otherwise specified)

Aug. 2024. Revision 1.4 5 Magnachip Semiconductor Ltd.  Characteristic Graph Fig.3 On-resistance variation with junction temperature (normalized) Fig.4 Breakdown voltage variation with temperature (normalized) Fig.5 Transfer characteristics Fig.6 Diode forward characteristics Fig.1 On-region characteristics. Fig.2 On-resistance variation with drain current 100 120 0 5 10 15 20 ID (A) VDS (V) 10 V 0.5 1.5 2.5 -60 -30 0 30 60 90 120 150 RDS(ON) (normalized) TJ (˚C) 100 2 4 6 8 10 ID (A) VGS (V) T=150˚C -55˚C 25˚C 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 5 25 45 65 85 105 RDS(ON) (Ω) ID (A) VGS=20V VGS=10V 0.7 0.8 0.9 1.1 1.2 1.3 -60 -30 0 30 60 90 120 150 BVDSS (normalized) TJ (˚C) 100 IS (A) VSD (V) 25˚C T=150˚C 8 V 20 V *Notes : VGS=10V, ID=17.5A *Notes : VGS=0V, ID=1mA VGS = 6 V

Aug. 2024. Revision 1.4 6 Magnachip Semiconductor Ltd. Fig.9 Threshold voltage variation with junction temperature Fig.10 Drain current Fig.11 Power dissipation variation with pulse time Fig.12 Output capacitance stored energy Fig.7 Gate charge characteristics Fig.8 Capacitance characteristics 2000 4000 6000 8000 10000 10 10 10 10 10 10 PD (W) tP (s) 0 100 200 300 400 500 600 EOSS (µJ) VDS (V) 0.5 1.5 25 50 75 100 125 150 VGS(th) (normalized) TJ (˚C) 0 20 40 60 80 VGS (V) QG (nC) 0.1 100 1000 10000 0.1 1 10 100 C (pF) VDS (V) 25 50 75 100 125 150 ID (A) TC (˚C) 130V 520V Ciss Coss Crss *Notes : ID=35A *Notes : VGS=0V, f=400kHz Single Pulse Rthjc = 3.21℃/W TC=25℃ -5 -4 -3 -2 -1 0

Aug. 2024. Revision 1.4 7 Magnachip Semiconductor Ltd. Fig.13 Transient thermal response Fig.14 Safe operating area 10 10 10 10 10 10 10 10 10 Zthjc (˚C/W) tP (s) 10 10 10 10 10 ID (A) VDS (V) Single Pulse Tj=Max rated TC=25℃ Operation in This Area is Limited by RDS(on) -1 0 1 2 32-6 -5 -4 -3 -2 -1 0 1 * Notes: Duty Factor, D=t1/t2 PEAK Tj-TC=PDM* Zthjc Rthjc = 3.21℃/WSingle Pulse 0.02 0.01 0.1 D=0.5 0.2 0.05 PDM -1-2 10µs 100µs 1ms 10ms 100ms 1sDC

Aug. 2024. Revision 1.4 8 Magnachip Semiconductor Ltd.  Test Circuit

Aug. 2024. Revision 1.4 9 Magnachip Semiconductor Ltd.  Physical Dimension TO-220FT (3L) Note : Package body size, length and width do not include mold flash, protrusions and gate burrs.

Aug. 2024. Revision 1.4 10 Magnachip Semiconductor Ltd. DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. Magnachip reserves the right to change the specifications and circuitry without notice at any time. Magnachip does not consider responsibility for use of any circuitry other than circuitry entirely included in a Magnachip product. is a registered trademark of Magnachip Semiconductor Ltd.