MMFT5P03HD MOTOROLA | Alldatasheet

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1Motorola TMOS Power MOSFET Transistor Device Data /C0068/C0101/C0115/C0105/C0103/C0110/C0101/C0114/C0039/C0115 /C0068/C0097/C0116/C0097 /C0083/C0104/C0101/C0101/C0116 Medium Power Surface Mount Products /C0084/C0077/C0079/C0083 /C0080/C0045/C0067/C0104/C0097/C0110/C0110/C0101/C0108 /C0070/C0105/C0101/C0108/C0100 /C0069/C0102/C0102/C0101/C0099/C0116 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114 MMFT5P03HD is an advanced power MOSFET which utilizes Motorola’s High Cell Density HDTMOS process. This miniature surface mount MOSFET features ultra low RDS(on) and true logic level performance. It is capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. MMFT5P03HD devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

  • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
  • Logic Level Gate Drive — Can Be Driven by Logic ICs
  • Miniature SOT–223 Surface Mount Package — Saves Board Space
  • Diode Is Characterized for Use In Bridge Circuits
  • Diode Exhibits High Speed, With Soft Recovery
  • IDSS Specified at Elevated Temperature
  • Avalanche Energy Specified DEVICE MARKING ORDERING INFORMATION 5P03H Device Reel Size Tape Width Quantity 5P03H MMFT5P03HDT3 13″ 12 mm embossed tape 4000 units Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International Rectifier. Thermal Clad is a trademark of the Bergquist Company. REV 2 Order this document by MMFT5P03HD/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA  Motorola, Inc. 1997 CASE 318E–04, Style 3 TO–261AA /C0077/C0077/C0070/C0084/C0053/C0080/C0048/C0051/C0072/C0068 TMOS MEDIUM POWER FET

5.2 AMPERES

30 VOLTS

R DS(on) = 100 mΩ Motorola Preferred Device D S G 2, 4

/C0077/C0077/C0070/C0084/C0053/C0080/C0048/C0051/C0072/C0068

2 Motorola TMOS Power MOSFET Transistor Device Data

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Negative sign for P–Channel devices omitted for clarity Rating Symbol Max Unit Drain–to–Source Voltage VDSS 30 V Drain–to–Gate Voltage (RGS = 1.0 MΩ ) VDGR 30 V Gate–to–Source Voltage — Continuous VGS ± 20 V 1 inch SQ. FR–4 or G–10 PCB 10 seconds Thermal Resistance — Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current — Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (1) R THJA PD ID ID IDM 3.13 5.2 4.1 °C/W Watts mW/ °C A A A Minimum FR–4 or G–10 PCB 10 seconds Thermal Resistance — Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current — Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (1) R THJA PD ID ID IDM 1.56 12.5 3.7 2.9 °C/W Watts mW/ °C A A A Operating and Storage Temperature Range TJ, Tstg – 55 to 150 °C Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 30 Vdc, VGS = 10 Vdc, Peak IL = 12 Apk, L = 3.5 mH, RG = 25 /C0087) EAS 250 mJ (1) Repetitive rating; pulse width limited by maximum junction temperature.

/C0077/C0077/C0070/C0084/C0053/C0080/C0048/C0051/C0072/C0068 3Motorola TMOS Power MOSFET Transistor Device Data ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (Cpk ≥ 2.0) (1) (3) (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) V(BR)DSS Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 24 Vdc, VGS = 0 Vdc) (VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS 1.0 µAdc Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS — — 100 nAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (Cpk ≥ 2.0) (1) (3) (VDS = VGS , ID = 0.25 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) 1.0 1.75 3.5 3.0 Vdc mV/°C Static Drain–to–Source On–Resistance (Cpk ≥ 2.0) (1) (3) (VGS = 10 Vdc, ID = 5.2 Adc) (VGS = 4.5 Vdc, ID = 2.6 Adc) R DS(on) 119 100 150 m Ω Forward Transconductance (VDS = 15 Vdc, ID = 2.0 Adc) (1) gFS 2.0 4.0 — Mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 25 Vdc V 0 Vdc C iss — 475 950 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) C oss — 220 440 Transfer Capacitance f = 1.0 MHz) C rss — 70 140 SWITCHING CHARACTERISTICS (2) Turn–On Delay Time (V 15 Vd I 4 0 Ad td(on) — 12 24 ns Rise Time (VDD = 15 Vdc, ID = 4.0 Adc, VGS =1 0V d c tr — 24 48 Turn–Off Delay Time VGS = 10 Vdc, R G = 6.0 Ω ) (1) td(off) — 47 94 Fall Time G )( ) tf — 46 92 Turn–On Delay Time (V 15 Vd I 2 0 Ad td(on) — 19 38 Rise Time (VDD = 15 Vdc, ID = 2.0 Adc, VGS =45V d c tr — 55 110 Turn–Off Delay Time VGS = 4.5 Vdc, R G = 6.0 Ω ) (1) td(off) — 30 60 Fall Time G )( ) tf — 40 80 Gate Charge (V 24 Vd I 4 0 Ad Q T — 17 24 nC (VDS = 24 Vdc, ID = 4.0 Adc, Q 1 — 1.7 —( DS , D , VGS = 10 Vdc) (1) Q 2 — 6.3 — Q 3 — 4.6 — SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage(1) (IS = 4.0 Adc, VGS = 0 Vdc) (1) (IS = 4.0 Adc, VGS = 0 Vdc, TJ = 125°C) VSD 1.1 0.89 1.5 Vdc Reverse Recovery Time (I 4 0 Ad V 0 Vd trr — 39 — ns (IS = 4.0 Adc, VGS = 0 Vdc, ta — 20 —(S , GS , dIS/dt = 100 A/µs) (1) tb — 19 — Reverse Recovery Stored Charge Q RR — 0.042 — µC (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. (3) Reflects typical values. C pk = Max limit – Typ 3 x SIGMA (4) Repetitive rating; pulse width limited by maximum junction temperature.

4 Motorola TMOS Power MOSFET Transistor Device Data

Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics Figure 3. On–Resistance versus Figure 4. On–Resistance versus Drain Current Figure 5. On–Resistance Variation with Figure 6. Drain–To–Source Leakage

by recognizing that the power MOSFET is charge controlled. by current from the generator. and Q2 and VGSP are read from the gate charge curve. on–state when calculating td(off). voltage at the source which reduces the gate drive current. tion of drain current, the mathematical solution is complex. sure and, consequently, is not specified. Figure 7. Capacitance Variation

6 Motorola TMOS Power MOSFET Transistor Device Data

Figure 8. Gate–To–Source and Drain–To–Source Figure 9. Resistive Switching Time switching losses, radiated noise, EMI and RFI. teristic and is usually the culprit that induces current ringing. Figure 10. Diode Forward Voltage versus Current

8 Motorola TMOS Power MOSFET Transistor Device Data

Figure 14. Thermal Response Figure 15. Diode Reverse Recovery Waveform

/C0077/C0077/C0070/C0084/C0053/C0080/C0048/C0051/C0072/C0068 9Motorola TMOS Power MOSFET Transistor Device Data INFORMATION FOR USING THE SOT–223 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. SOT–223 0.079 2.0 0.15 3.8 0.248 6.3 0.079 2.0 0.059 1.5 0.059 1.5 0.059 1.5 0.091 2.3 0.091 2.3 mm inches SOT–223 POWER DISSIPATION The power dissipation of the SOT–223 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, R θJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT–223 package, PD can be calculated as follows: PD = TJ(max) – TA R θJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 3.13 watts. PD = 150°C – 25°C 40°C/W = 3.13 watts The 40°C/W for the SOT–223 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 3.13 watts. There are other alternatives to achieving higher power dissipation from the SOT–223 package. One is to increase the area of the drain pad. By increasing the area of the drain pad, the power dissipation can be increased. Although one can almost double the power dissipation with this method, one will be giving up area on the printed circuit board which can defeat the purpose of using surface mount technology. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad . Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.

10 Motorola TMOS Power MOSFET Transistor Device Data

vary among soldering systems, but it is a good starting point. efficiently, then distributes this energy to the components. up to 30 degrees cooler than the adjacent solder joints.

40 TO 80 SECONDS

Figure 16. Typical Solder Heating Profile

/C0077/C0077/C0070/C0084/C0053/C0080/C0048/C0051/C0072/C0068 11Motorola TMOS Power MOSFET Transistor Device Data PACKAGE DIMENSIONS CASE 318E–04 ISSUE H H S F A B D G L 12 3 0.08 (0003) C M K J DIM A MIN MAX MIN MAX MILLIMETERS 0.249 0.263 6.30 6.70 INCHES B 0.130 0.145 3.30 3.70 C 0.060 0.068 1.50 1.75 D 0.024 0.035 0.60 0.89 F 0.115 0.126 2.90 3.20 G 0.087 0.094 2.20 2.40 H 0.0008 0.0040 0.020 0.100 J 0.009 0.014 0.24 0.35 K 0.060 0.078 1.50 2.00 L 0.033 0.041 0.85 1.05 M 0 10 0 10 S 0.264 0.287 6.70 7.30 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. /C0095/C0095/C0095 /C0095 STYLE 3: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN

/C0077/C0077/C0070/C0084/C0053/C0080/C0048/C0051/C0072/C0068

12 Motorola TMOS Power MOSFET Transistor Device Data

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;JAPAN : Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315 – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET : http://www.mot.com/SPS/ MMFT5P03HD/D◊