MMFT3055V MOTOROLA | Alldatasheet

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1Motorola TMOS Power MOSFET Transistor Device Data /C0080/C0114/C0111/C0100/C0117/C0099/C0116 /C0080/C0114/C0101/C0118/C0105/C0101/C0119 /C0084/C0077/C0079/C0083 /C0086 /C0083/C0079/C0084/C0045/C0050/C0050/C0051 /C0102/C0111/C0114 /C0083/C0117/C0114/C0102/C0097/C0099/C0101 /C0077/C0111/C0117/C0110/C0116 N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resis- tance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMO S devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in powe r supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety m argin against unexpected voltage transients. New Features of TMOS V

  • On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
  • Faster Switching than E–FET Predecessors Features Common to TMOS V and TMOS E–FETS
  • Avalanche Energy Specified
  • IDSS and VDS(on) Specified at Elevated Temperature
  • Static Parameters are the Same for both TMOS V and TMOS E–FET
  • Available in 12 mm T ape & Reel Use MMFT3055VT1 to order the 7 inch/1000 unit reel Use MMFT3055VT3 to order the 13 inch/4000 unit reel MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–to–Source Voltage VDSS 60 Vdc Drain–to–Gate Voltage (RGS = 1.0 MΩ ) VDGR 60 Vdc Gate–to–Source Voltage – Continuous Gate–to–Source Voltage – Non–repetitive (tp ≤ 10 ms) VGS VGSM ± 20 ± 25 Vdc Vpk Drain Current – Continuous Drain Current – Continuous @ 100°C Drain Current – Single Pulse (tp ≤ 10 µs) ID ID IDM 1.7 1.4 6.0 Adc Apk Total PD @ TA = 25°C mounted on 1” sq. Drain pad on FR–4 bd material Total PD @ TA = 25°C mounted on 0.70” sq. Drain pad on FR–4 bd material Total PD @ TA = 25°C mounted on min. Drain pad on FR–4 bd material Derate above 25°C PD 2.0 1.7 0.9 6.3 Watts mW/ °C Operating and Storage T emperature Range TJ, Tstg –55 to 175 °C Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 3.4 Apk, L = 10 mH, RG = 25 Ω ) EAS mJ Thermal Resistance – Junction to Ambient on 1” sq. Drain pad on FR–4 bd material – Junction to Ambient on 0.70” sq. Drain pad on FR–4 bd material – Junction to Ambient on min. Drain pad on FR–4 bd material R θJA R θJA R θJA 159 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C This document contains information on a new product. Specifications and information herein are subject to change without notice. E–FET and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Order this document by MMFT3055V/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA TM /C0077/C0077/C0070/C0084/C0051/C0048/C0053/C0053/C0086 TMOS POWER FET

1.7 AMPERES

60 VOLTS

R DS(on) = 0.130 OHM D S G CASE 318E–04, Style 3 TO–261AA  Motorola, Inc. 1996

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2 Motorola TMOS Power MOSFET Transistor Device Data

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) V(BR)DSS Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS 100 µAdc Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS — — 100 nAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS , ID = 250 µAdc) Threshold T emperature Coefficient (Negative) VGS(th) 2.0 2.8 5.6 4.0 Vdc mV/°C Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 0.85 Adc) R DS(on) — 0.115 0.13 Ohm Drain–to–Source On–Voltage (VGS = 10 Vdc, ID = 1.7 Adc) (VGS = 10 Vdc, ID = 0.85 Adc, TJ = 150°C) VDS(on) 0.27 0.25 Vdc Forward Transconductance (VDS = 8.0 Vdc, ID = 1.7 Adc) gFS 1.0 2.7 — mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) C iss — 360 500 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) C oss — 110 150 Transfer Capacitance f = 1.0 MHz) C rss — 25 50 SWITCHING CHARACTERISTICS (2) Turn–On Delay Time (VDD = 30 Vdc, ID = 1.7 Adc, VGS = 10 Vdc, R G = 9.1 Ω ) td(on) — 8.0 20 ns Rise Time (VDD = 30 Vdc, ID = 1.7 Adc, VGS = 10 Vdc, R G = 9.1 Ω ) tr — 9.0 20 Turn–Off Delay Time VGS = 10 Vdc, R G = 9.1 Ω ) td(off) — 32 60 Fall Time G = 9.1 Ω ) tf — 18 40 Gate Charge (VDS = 48 Vdc, ID = 1.7 Adc, VGS = 10 Vdc) Q T — 13 20 nC (VDS = 48 Vdc, ID = 1.7 Adc, VGS = 10 Vdc) Q 1 — 2.0 —(VDS = 48 Vdc, ID = 1.7 Adc, VGS = 10 Vdc) Q 2 — 5.0 — Q 3 — 4.0 — SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (1) (IS = 1.7 Adc, VGS = 0 Vdc) (IS = 1.7 Adc, VGS = 0 Vdc, TJ = 150°C) VSD 0.85 0.7 1.6 Vdc Reverse Recovery Time (IS = 1.7 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) trr — 40 — ns (IS = 1.7 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) ta — 34 —(IS = 1.7 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) tb — 6.0 — Reverse Recovery Stored Charge Q RR — 0.089 — µC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25″ from package to center of die) LD — 4.5 — nH Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) LS — 7.5 — nH (1) Pulse Test: Pulse Width ≤/n636861720000000000000000300 µs, Duty Cycle ≤ 2%. (2)Switching characteristics are independent of operating junction temperature.

/C0077/C0077/C0070/C0084/C0051/C0048/C0053/C0053/C0086 3Motorola TMOS Power MOSFET Transistor Device Data PACKAGE DIMENSIONS CASE 318E–04 ISSUE H H S F A B D G L 1 2 3 0.08 (0003) C M K J DIM A MIN MAX MIN MAX MILLIMETERS 0.249 0.263 6.30 6.70 INCHES B 0.130 0.145 3.30 3.70 C 0.060 0.068 1.50 1.75 D 0.024 0.035 0.60 0.89 F 0.115 0.126 2.90 3.20 G 0.087 0.094 2.20 2.40 H 0.0008 0.0040 0.020 0.100 J 0.009 0.014 0.24 0.35 K 0.060 0.078 1.50 2.00 L 0.033 0.041 0.85 1.05 M 0 10 0 10 S 0.264 0.287 6.70 7.30 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. /C0095 /C0095 /C0095 /C0095 STYLE 3: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN

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4 Motorola TMOS Power MOSFET Transistor Device Data

How to reach us: USA / EUROPE : Motorola Literature Distribution; JAPAN : Nippon Motorola Ltd.; T atsumi–SPD–JLDC, T oshikatsu Otsuki, P .O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 T atsumi Koto–Ku, T okyo 135, Japan. 03–3521–8315 INTERNET : http://Design–NET .com 51 Ting Kok Road, T ai Po, N.T ., Hong Kong. 852–26629298 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. MMFT3055V/D /C0042/C0077/C0077/C0070/C0084/C0051/C0048/C0053/C0053/C0086/C0047/C0068/C0042