MMFT3055E ONSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Silicon Gate for Fast Switching Speeds
  • Low RDS(on) — 0.15 Ω max
  • The SOT−223 Package can be Soldered Using Wave or Reflow. The Formed Leads Absorb Thermal Stress During Soldering, Eliminating the Possibility of Damage to the Die
  • Available in 12 mm Tape and Reel Use MMFT3055ET1 to order the 7 inch/1000 unit reel. Use MMFT3055ET3 to order the 13 inch/4000 unit reel. MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 60 Vdc Gate−to−Source Voltage− Continuous VGS ± 20 Vdc Drain Current − Continuous Drain Current − Single Pulse (tp ≤ 10 /C0109s) ID IDM 1.7 6.8 Adc Apk Total Power Dissipation @ TA = 25°C Derate above 25°C (Note 1) PD 0.8 6.3 Watts mW/°C Operating and Storage Temperature Range TJ, Tstg −65 to 150 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 60 Vdc, VGS = 10 Vdc, Peak IL = 1.7 Apk, L = 0.2 mH, RG = 25 Ω ) EAS 168 mJ Thermal Resistance − Junction to Ambient (surface mounted) RθJA 156 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C 1. Power rating when mounted on FR −4 glass epoxy printed circuit board using recommended footprint. N−Channel Device Package Shipping †

ORDERING INFORMATION

MMFT3055ET1 SOT −223 1000 Tape & Reel SOT−223 CASE 318E STYLE 3 LWW MARKING DIAGRAM 3055 L = Location Code WW = Work Week PIN ASSIGNMENT 321 Gate Drain Source Drain MMFT3055ET3 SOT −223 4000 Tape & Reel D S G 2,4 http://onsemi.com †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. VDSS RDS(ON) TYP I D MAX 60 V 150 m Ω 1.7 A

http://onsemi.com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage, (VGS = 0, ID = 250 /C0109A) V(BR)DSS 60 Vdc Zero Gate Voltage Drain Current, (VDS = 60 V, VGS = 0 V) IDSS 10 /C0109Adc Gate−Body Leakage Current, (VGS = 20 V, VDS = 0 V) IGSS 100 nAdc ON CHARACTERISTICS (Note 2) Gate Threshold Voltage, (VDS = VGS, ID = 1.0 mA) VGS(th) 2.0 4.5 Vdc Static Drain−to−Source On−Resistance, (VGS = 10 V, ID = 0.85 A) RDS(on) 0.15 /C0087 Drain−to−Source On−Voltage, (VGS = 10 V, ID = 1.7 A) VDS(on) 0.34 Vdc Forward Transconductance, (VDS = 15 V, ID = 0.85 A) gFS 2.2 mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 20 V, VGS = 0 V, f = 1.0 MHz) Ciss 430 pFOutput Capacitance Coss 225 Reverse Transfer Capacitance Crss 40 SWITCHING CHARACTERISTICS Turn−On Delay Time (VDD = 25 V, ID = 0.85 A VGS = 10 V, RG = 50 /C0087, RGS = 25 /C0087) td(on) 15 ns Rise Time tr 22 Turn−Off Delay Time td(off) 31 Fall Time tf 49 Total Gate Charge (VDS = 48 V, ID = 1.7 A, VGS = 10 Vdc) See Figures 15 and 16 Qg 12.5 nCGate−Source Charge Qgs 2.0 Gate−Drain Charge Qgd 4.5 SOURCE DRAIN DIODE CHARACTERISTICS(1) Forward On−Voltage IS = 1.7 A, VGS = 0 V VSD 0.8 Vdc Forward Turn−On Time IS = 1.7 A, VGS = 0 V, dlS/dt = 400 A//C0109s, VR = 30 V ton Limited by stray inductance Reverse Recovery Time trr 50 ns 2. Pulse Test: Pulse Width ≤300 /C0109s, Duty Cycle ≤2%.

25°C and a maximum junction temperature of 150 °C. devices for switching times less than one microsecond. Figure 7. Maximum Rated Forward Biased

0.05 RθJA(t) = r(t) RθJA

Figure 8. Thermal Response applications requiring CSOA data. S/dt is specified with a maximum value. conduction to reverse blocking. CSOA stress is maximized as IS decays from IRM to zero. only a second order effect on CSOA. 10 V/ns was attained with dI S/dt of 400 A/ /C0109s.

Figure 9. Commutating Waveforms Figure 10. Commutating Safe Operating

0.25 IRM

Figure 11. Commutating Safe Operating Area Figure 12. Unclamped Inductive Switching Figure 13. Unclamped Inductive Switching

http://onsemi.com PACKAGE DIMENSIONS STYLE 3: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN H S F A B D G L 12 3 0.08 (0003) C M K J DIM A MIN MAX MIN MAX MILLIMETERS 0.249 0.263 6.30 6.70 INCHES B 0.130 0.145 3.30 3.70 C 0.060 0.068 1.50 1.75 D 0.024 0.035 0.60 0.89 F 0.115 0.126 2.90 3.20 G 0.087 0.094 2.20 2.40 H 0.0008 0.0040 0.020 0.100 J 0.009 0.014 0.24 0.35 K 0.060 0.078 1.50 2.00 L 0.033 0.041 0.85 1.05 M 0 10 0 10 S 0.264 0.287 6.70 7.30 NOTES: /Em/figure1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. /Em/figure2. CONTROLLING DIMENSION: INCH. /C0095/C0095 /C0095 /C0095 SOT−223 (TO−261) CASE 318E−04 ISSUE K *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOLDERING FOOTPRINT* 1.5 0.059 /C0466mm inches/C0467SCALE 6:1 3.8 0.15 2.0 0.079 6.3 0.2482.3 0.091 2.3 0.091 2.0 0.079 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 MMFT3055E/D E−FET is a trademark of Semiconductor Components Industries, LLC. LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.