MMFT2N25E

mmft2n25e.rev2

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© Semiconductor Components Industries, LLC, 2013 May, 2013 − Rev. 2

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N−Channel Enhancement−Mode Silicon Gate This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain −to−source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

• Avalanche Energy Capability Specified at Elevated Temperature
• Internal Source−to−Drain Diode Designed to Replace External Zener Transient Suppressor − Absorbs High Energy in the Avalanche Mode
• Source−to−Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 250 Vdc Drain−to−Gate Voltage, RGS = 1.0 m/C0087 VDGR 250 Vdc Gate−to−Source Voltage — Continuous VGS ±20 Vdc Gate−to−Source Voltage — Single Pulse (tp ≤ 50 /C0109S) VGSM ±40 Vdc Drain Current — Continuous @ T C = 25°C Drain Current — Continuous @ T C = 100°C Drain Current — Single Pulse (tp ≤ 10 /C0109S) ID ID IDM 2.0 0.6 7.0 Adc Apk Total Power Dissipation @ TC = 25°C Derate above 25°C Total PD @ TA = 25°C mounted on 1″ Sq. Drain Pad on FR−4 Bd. Material Total PD @ TA = 25°C mounted on 0.7″ Sq. Drain Pad on FR−4 Bd. Material Total PD @ TA = 25°C mounted on min. Drain Pad on FR−4 Bd. Material PD 0.77 6.2 1.0 1.2 0.8 Watts mW/°C Watts Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C UNCLAMPED DRAIN−TO−SOURCE AVALANCHE CHARACTERISTICS (TJ < 150°C) Single Pulse Drain−to−Source Avalanche Energy — Starting T J = 25°C (VDD = 80 V, VGS = 10 V, Peak IL= 4.0 Apk, L = 3.0 mH, RG = 25 Ω) EAS mJ THERMAL CHARACTERISTICS — Junction −to−Ambient on 1″ Sq. Drain Pad on FR−4 Bd. Material — Junction −to−Ambient on 0.7″ Sq. Drain Pad on FR−4 Bd. Material — Junction −to−Ambient on min. Drain Pad on FR−4 Bd. Material RθJA 90 103 162 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. http://onsemi.com POWER FET

2.0 AMPERES, 250 VOLTS

RDS(on) = 3.5 /C0087 CASE 318E−04, STYLE 3 TO−261AA1 D S G 2,4

http://onsemi.com ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) Temperature Coefficient (Positive) BVDSS 250 324 Vdc V/°C Zero Gate Voltage Drain Current (VDS = 250 V, VGS = 0) (VDS = 250 V, VGS = 0, TJ = 125°C) IDSS 100 μAdc Gate−Body Leakage Current (VGS = ±20 V, VDS = 0) IGSS — — 100 nAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 0.25 mA) Threshold Temperature Coefficient (Negative) VGS(th) 2.0 2.8 5.7 4.0 Vdc mV/°C Static Drain−to−Source On−Resistance (VGS = 10 V, ID = 1.0 Adc) RDS(on) — 2.1 3.5 Ohms Drain−to−Source On−Voltage (VGS = 10 V, ID = 2.0 A) (VGS = 10 V, ID = 1.0 A, TJ = 125°C) VDS(on) 8.40 7.35 Vdc Forward Transconductance (VDS = 8.0 V, ID = 2.0 Adc) gFS 0.44 1.2 — mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Ciss — 137 190 pF Output Capacitance Coss — 30 40 Transfer Capacitance Crss — 7.0 10 SWITCHING CHARACTERISTICS (1) Turn−On Delay Time (VDS = 125 V, ID = 2.0 A, RG = 9.1 Ohms, VGS = 10 V) td(on) — 9.2 20 ns Rise Time tr — 6.6 10 Turn−Off Delay Time td(off) — 13 30 Fall Time tf — 8.5 20 Gate Charge (VDS = 200 V, ID = 2.0 A, VGS = 10 V) QT — 4.7 10 nC Q1 — 1.3 — Q2 — 3.2 — Q3 — 2.3 — SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage IS = 2.0 A, VGS = 0 V VSD — 0.94 2.0 Vdc IS = 2.0 A, VGS = 0 V, TJ = 125°C VSD — 0.83 — Reverse Recovery Time (IS = 2.0 A, dlS/dt = 100 A/μs) trr — 104 — nS ta — 63 — tb — 41 — Reverse Recovery Stored Charge qrr — 0.365 — /C0109C (1) Pulse Test: Pulse Width ≤ 300 μS, Duty Cycle ≤ 2%.

Figure 13. Thermal Response

http://onsemi.com PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE N D E b e 12 3 0.08 (0003) A C NOTES: /C8195/C81991. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. /C8195/C81992. CONTROLLING DIMENSION: INCH. 1.5 0.059 /C0466mm inches/C0467SCALE 6:1 3.8 0.15 2.0 0.079 6.3 0.2482.3 0.091 2.3 0.091 2.0 0.079 SOLDERING FOOTPRINT* HE DIM A MIN NOM MAX MIN MILLIMETERS 1.50 1.63 1.75 0.060 INCHES A1 0.02 0.06 0.10 0.001 b 0.60 0.75 0.89 0.024 b1 2.90 3.06 3.20 0.115 c 0.24 0.29 0.35 0.009 D 6.30 6.50 6.70 0.249 E 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.85 0.94 1.05 0.033 0.064 0.068 0.002 0.004 0.030 0.035 0.121 0.126 0.012 0.014 0.256 0.263 0.138 0.145 0.091 0.094 0.037 0.041 NOM MAX L1 1.50 1.75 2.00 0.060 6.70 7.00 7.30 0.264 0.069 0.078 0.276 0.287 HE − − 0° 10° 0° 10° /C0113 /C0113 L STYLE 3: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a numb er of patents, trademarks, reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 MMFT2N25E/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative