MMFT2N25E MOTOROLA | Alldatasheet
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1Motorola TMOS Power MOSFET Transistor Device Data /C0080/C0114/C0111/C0100/C0117/C0099/C0116 /C0080/C0114/C0101/C0118/C0105/C0101/C0119 /C0084/C0077/C0079/C0083 /C0069/C0045/C0070/C0069/C0084 /C0072/C0105/C0103/C0104 /C0069/C0110/C0101/C0114/C0103/C0121 /C0080/C0111/C0119/C0101/C0114 /C0070/C0069/C0084 N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
- Avalanche Energy Capability Specified at Elevated Temperature
- Internal Source–to–Drain Diode Designed to Replace External Zener Transient Suppressor – Absorbs High Energy in the Avalanche Mode
- Source–to–Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–to–Source Voltage VDSS 250 Vdc Drain–to–Gate Voltage, RGS = 1.0 m/C0087 VDGR 250 Vdc Gate–to–Source Voltage — Continuous VGS ± 20 Vdc Gate–to–Source Voltage — Single Pulse (tp ≤ 50 /C0109S) VGSM ± 40 Vdc Drain Current — Continuous @ TC = 25°C Drain Current — Continuous @ TC = 100°C Drain Current — Single Pulse (tp ≤ 10 /C0109S) ID ID IDM 2.0 0.6 7.0 Adc Apk Total Power Dissipation @ TC = 25°C Derate above 25°C Total PD @ TA = 25°C mounted on 1″ Sq. Drain Pad on FR–4 Bd. Material Total PD @ TA = 25°C mounted on 0.7″ Sq. Drain Pad on FR–4 Bd. Material Total PD @ TA = 25°C mounted on min. Drain Pad on FR–4 Bd. Material PD 0.77 6.2 1.0 1.2 0.8 Watts mW/ °C Watts Operating and Storage Temperature Range TJ, Tstg –55 to 150 °C UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (T J < 150°C) Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 80 V, VGS = 10 V, Peak IL= 4.0 Apk, L = 3.0 mH, RG = 25 Ω ) EAS mJ THERMAL CHARACTERISTICS — Junction–to–Ambient on 1″ Sq. Drain Pad on FR–4 Bd. Material — Junction–to–Ambient on 0.7″ Sq. Drain Pad on FR–4 Bd. Material — Junction–to–Ambient on min. Drain Pad on FR–4 Bd. Material R θJA 90 103 162 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. TMOS is a registered trademark of Motorola, Inc. E–FET is a trademark of Motorola, Inc. Order this document by MMFT2N25E/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA Motorola, Inc. 1997 /C0077/C0077/C0070/C0084/C0050/C0078/C0050/C0053/C0069 TMOS POWER FET
2.0 AMPERES
250 VOLTS
R DS(on) = 3.5 /C0087 CASE 318E–04, STYLE 3 TO–261AA D S G 2,4
/C0077/C0077/C0070/C0084/C0050/C0078/C0050/C0053/C0069
2 Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) Temperature Coefficient (Positive) BV DSS 250 324 Vdc V/°C Zero Gate Voltage Drain Current (VDS = 250 V, VGS = 0) (VDS = 250 V, VGS = 0, TJ = 125°C) IDSS 100 µAdc Gate–Body Leakage Current (VGS = ± 20 V, VDS = 0) IGSS — — 100 nAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS , ID = 0.25 mA) Threshold Temperature Coefficient (Negative) VGS(th) 2.0 2.8 5.7 4.0 Vdc mV/°C Static Drain–to–Source On–Resistance (VGS = 10 V, ID = 1.0 Adc) R DS(on) — 2.1 3.5 Ohms Drain–to–Source On–Voltage (VGS = 10 V, ID = 2.0 A) (VGS = 10 V, ID = 1.0 A, TJ = 125°C) VDS(on) 8.40 7.35 Vdc Forward Transconductance (VDS = 8.0 V, ID = 2.0 Adc) gFS 0.44 1.2 — mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 V, C iss — 137 190 pF Output Capacitance (VDS = 25 V, VGS = 0, f 1 0 MHz) C oss — 30 40 Transfer Capacitance f = 1.0 MHz) C rss — 7.0 10 SWITCHING CHARACTERISTICS (1) Turn–On Delay Time (VDS = 125 V td(on) — 9.2 20 ns Rise Time (VDS = 125 V, ID = 2.0 A, tr — 6.6 10 Turn–Off Delay Time D , R G = 9.1 Ohms, VGS =1 0V ) td(off) — 13 30 Fall Time VGS = 10 V) tf — 8.5 20 Gate Charge (V 200 V Q T — 4.7 10 nC (VDS = 200 V, ID =20A Q 1 — 1.3 — ID = 2.0 A, VGS = 10 V) Q 2 — 3.2 —GS ) Q 3 — 2.3 — SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage IS = 2.0 A, VGS = 0 V VSD — 0.94 2.0 Vdc IS = 2.0 A, VGS = 0 V, TJ = 125°C VSD — 0.83 — Reverse Recovery Time (I 2 0 A trr — 104 — nS dlS/dt = 100 A/µs) tb — 41 — Reverse Recovery Stored Charge qrr — 0.365 — /C0109C (1) Pulse Test: Pulse Width ≤ 300 µS, Duty Cycle ≤ 2%.
4 Motorola TMOS Power MOSFET Transistor Device Data
Figure 7. Capacitance Variation Figure 8. Gate–to–Source and Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage versus Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy versus
Figure 13. Thermal Response
/C0077/C0077/C0070/C0084/C0050/C0078/C0050/C0053/C0069
6 Motorola TMOS Power MOSFET Transistor Device Data
CASE 318E–04 ISSUE H H S F A B D G L 12 3 0.08 (0003) C M K J DIM A MIN MAX MIN MAX MILLIMETERS 0.249 0.263 6.30 6.70 INCHES B 0.130 0.145 3.30 3.70 C 0.060 0.068 1.50 1.75 D 0.024 0.035 0.60 0.89 F 0.115 0.126 2.90 3.20 G 0.087 0.094 2.20 2.40 H 0.0008 0.0040 0.020 0.100 J 0.009 0.014 0.24 0.35 K 0.060 0.078 1.50 2.00 L 0.033 0.041 0.85 1.05 M 0 10 0 10 S 0.264 0.287 6.70 7.30 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. /C0095/C0095/C0095 /C0095 STYLE 3: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;JAPAN : Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Customer Focus Center: 1–800–521–6274 Motorola Fax Back System – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 – http://sps.motorola.com/mfax/ HOME PAGE : http://motorola.com/sps/ MMFT2N25E/D◊