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1Motorola TMOS Power MOSFET Transistor Device Data /C0077/C0101/C0100/C0105/C0117/C0109 /C0080/C0111/C0119/C0101/C0114 /C0070/C0105/C0101/C0108/C0100 /C0069/C0102/C0102/C0101/C0099/C0116 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114 N–Channel Enhancement Mode Silicon Gate TMOS E–FET/C0116 SOT–223 for Surface Mount This advanced E–FE T is a TMO S M edium P owe r MOSFET designed to withstand high energy in the avalanche and commuta- tion m odes. This device is also designed with a low threshold voltage so it is fully enhanced with 5 Volts. This new energy efficient device also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, dc–dc converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. The device is housed in the SOT–223 package which is designed for medium power surface mount applications.

  • Silicon Gate for Fast Switching Speeds
  • Low Drive Requirement to Interface Power Loads to Logic Level ICs, VGS(th) = 2 Volts Max
  • Low RDS(on) — 0.15 Ω max
  • The SOT–223 Package can be Soldered Using Wave or Re- flow. The Formed Leads Absorb Thermal Stress During Sol- dering, Eliminating the Possibility of Damage to the Die
  • Available in 12 mm T ape and Reel Use MMFT2N02ELT1 to order the 7 inch/1000 unit reel. Use MMFT2N02ELT3 to order the 13 inch/4000 unit reel. MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–to–Source Voltage VDS 20 Vdc Gate–to–Source Voltage — Continuous VGS ± 15 Vdc Drain Current — Continuous Drain Current — Pulsed ID IDM 1.6 6.4 Adc Total Power Dissipation @ TA = 25°C Derate above 25°C PD (1) 0.8 6.4 Watts mW/ °C Operating and Storage T emperature Range TJ, Tstg –65 to 150 °C Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 10 V, VGS = 5 V, Peak IL= 2 A, L = 0.2 mH, RG = 25 Ω ) EAS 66 mJ DEVICE MARKING 2N02L THERMAL CHARACTERISTICS Thermal Resistance — Junction–to–Ambient (surface mounted) R θJA 156 °C/W Maximum Temperature for Soldering Purposes, Time in Solder Bath TL 260 Sec (1)Power rating when mounted on FR–4 glass epoxy printed circuit board using recommended footprint. TMOS is a registered trademark of Motorola, Inc. E–FET is a trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. REV 3 Order this document by MMFT2N02EL/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA  Motorola, Inc. 1995 /C0077/C0077/C0070/C0084/C0050/C0078/C0048/C0050/C0069/C0076 MEDIUM POWER LOGIC LEVEL TMOS FET

1.6 AMP

20 VOLTS

R DS(on) = 0.15 OHM Motorola Preferred Device CASE 318E–04, STYLE 3 TO–261AA D S G 2,4

/C0077/C0077/C0070/C0084/C0050/C0078/C0048/C0050/C0069/C0076

2 Motorola TMOS Power MOSFET Transistor Device Data

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage, (VGS = 0, ID = 250 µA) V(BR)DSS 20 — — Vdc Zero Gate Voltage Drain Current, (VDS = 20 V, VGS = 0) IDSS — — 10 µAdc Gate–Body Leakage Current, (VGS = 15 V, VDS = 0) IGSS — — 100 nAdc ON CHARACTERISTICS Gate Threshold Voltage, (VDS = VGS , ID = 1 mA) VGS(th) 1 — 2 Vdc Static Drain–to–Source On–Resistance, (VGS = 5 V, ID = 0.8 A) R DS(on) — — 0.15 Ohms Drain–to–Source On–Voltage, (VGS = 5 V, ID = 1.6 A) VDS(on) — — 0.32 Vdc Forward Transconductance, (VDS = 10 V, ID = 0.8 A) gFS — 2.6 — mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 15 V, VGS = 0, f = 1 MHz) C iss — 580 — pFOutput Capacitance (VDS = 15 V, VGS = 0, f = 1 MHz) C oss — 430 — pF Reverse Transfer Capacitance f = 1 MHz) C rss — 250 — SWITCHING CHARACTERISTICS Turn–On Delay Time (VDD = 15 V, ID = 1.6 A VGS = 5 V, RG = 50 ohms, R GS = 25 ohms) td(on) — 16 — ns Rise Time (VDD = 15 V, ID = 1.6 A VGS = 5 V, RG = 50 ohms, R GS = 25 ohms) tr — 73 — ns Turn–Off Delay Time VGS = 5 V, RG = 50 ohms, R GS = 25 ohms) td(off) — 77 — ns Fall Time GS = 25 ohms) tf — 107 — Total Gate Charge (VDS = 16 V, ID = 1.6 A, VGS = 5 Vdc) See Figures 15 and 16 Q g — 20 — nCGate–Source Charge (VDS = 16 V, ID = 1.6 A, VGS = 5 Vdc) See Figures 15 and 16 Q gs — 1.7 — nC Gate–Drain Charge See Figures 15 and 16 Q gd — 6 — SOURCE DRAIN DIODE CHARACTERISTICS (1) Forward On–Voltage IS = 1.6 A, VGS = 0 VSD — 0.9 — Vdc Forward Turn–On Time IS = 1.6 A, VGS = 0, dlS/dt = 400 A/µs, VR = 16 V ton Limited by stray inductance Reverse Recovery Time dlS/dt = 400 A/µs, VR = 16 V trr — 55 — ns (1) Pulse Test: Pulse Width ≤/n636861720000000000000000300 µs, Duty Cycle ≤/n6368617200000000000000002%

4 Motorola TMOS Power MOSFET Transistor Device Data

when it is forward biased, or when it is on, or being turned on. General Data and Its Use” provides detailed instructions. switching times less than one microsecond. Figure 7. Maximum Rated Forward Biased

0.05 R θJA(t) = r(t) RθJA

Figure 8. Thermal Response 9 are present. Full or half–bridge PWM DC motor controllers are common applications requiring CSOA data. and circuit impedances. Maximum device stress occurs during trr as the diode goes from conduction to reverse blocking. source–drain diode current just prior to the onset of commutation. VR is specified at 80% rated BVDSS to ensure that the CSOA stress is maximized as IS decays from IRM to zero. R GS should be minimized during commutation. TJ has only a second order effect on CSOA. tained with dIS /dt of 400 A/µs.

Figure 9. Commutating Waveforms Figure 10. Commutating Safe Operating Area (CSOA)

0.25 IRM

Figure 11. Commutating Safe Operating Area Figure 12. Unclamped Inductive Switching Figure 13. Unclamped Inductive Switching

6 Motorola TMOS Power MOSFET Transistor Device Data

Figure 14. Capacitance Variation With Voltage

5 V 100 k

Vin = 15 Vpk; PULSE WIDTH ≤ 100 µs, DUTY CYCLE ≤ 10%. Figure 15. Gate Charge versus Gate–To–Source Voltage Figure 16. Gate Charge Test Circuit

soldering to a pad size given for maximum power dissipation. drain pad area is shown in Figure 17.

0.8 Watts

Figure 17. Thermal Resistance versus Drain Pad

8 Motorola TMOS Power MOSFET Transistor Device Data

  • Always preheat the device.
  • The delta temperature between the preheat and soldering should be 100°C or less.*
  • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C.
  • The soldering temperature and time shall not exceed 260°C for more than 10 seconds.
  • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less.
  • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress.
  • Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. TYPICAL SOLDER HEATING PROFILE For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating “profile” for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 18 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/in- frared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177–189°C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. 170°C STEP 1 PREHEAT ZONE 1 “RAMP” STEP 2 VENT “SOAK” STEP 3 HEATING ZONES 2 & 5 “RAMP” STEP 4 HEATING ZONES 3 & 6 “SOAK” STEP 5 HEATING ZONES 4 & 7 “SPIKE” STEP 6 VENT STEP 7 COOLING 200°C 150°C 100°C 50°C TIME (3 TO 7 MINUTES TOTAL) TMAX SOLDER IS LIQUID FOR

40 TO 80 SECONDS

Figure 18. Typical Solder Heating Profile

/C0077/C0077/C0070/C0084/C0050/C0078/C0048/C0050/C0069/C0076 9Motorola TMOS Power MOSFET Transistor Device Data PACKAGE DIMENSIONS CASE 318E–04 TO–261AA SOT–223 ISSUE H H S F A B D G L 1 2 3 0.08 (0003) C M K J DIM A MIN MAX MIN MAX MILLIMETERS 0.249 0.263 6.30 6.70 INCHES B 0.130 0.145 3.30 3.70 C 0.060 0.068 1.50 1.75 D 0.024 0.035 0.60 0.89 F 0.115 0.126 2.90 3.20 G 0.087 0.094 2.20 2.40 H 0.0008 0.0040 0.020 0.100 J 0.009 0.014 0.24 0.35 K 0.060 0.078 1.50 2.00 L 0.033 0.041 0.85 1.05 M 0 10 0 10 S 0.264 0.287 6.70 7.30 /C0095 /C0095 /C0095 /C0095 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. STYLE 3: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN

/C0077/C0077/C0070/C0084/C0050/C0078/C0048/C0050/C0069/C0076

10 Motorola TMOS Power MOSFET Transistor Device Data

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE : Motorola Literature Distribution; JAPAN : Nippon Motorola Ltd.; T atsumi–SPD–JLDC, T oshikatsu Otsuki, P .O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 T atsumi Koto–Ku, T okyo 135, Japan. 03–3521–8315 INTERNET : http://Design–NET .com 51 Ting Kok Road, T ai Po, N.T ., Hong Kong. 852–26629298 MMFT2N02EL/D /C0042/C0077/C0077/C0070/C0084/C0050/C0078/C0048/C0050/C0069/C0076/C0047/C0068/C0042