MMFT107T1 ONSEMI | Alldatasheet
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Publication Order Number: MMFT107T1/D Semiconductor Components Industries, LLC, 2000 November, 2000 – Rev. 4 MMFT107T1 Preferred Device Power MOSFET 250 mA, 200 Volts N–Channel SOT–223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc–dc converters, solenoid and relay drivers. The device is housed in the SOT–223 package which is designed for medium power surface mount applications.
- Silicon Gate for Fast Switching Speeds
- Low Drive Requirement
- The SOT–223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering eliminating the possibility of damage to the die. MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain–to–Source Voltage VDSS 200 Volts Gate–to–Source Voltage – Non–RepetitiveVGS ±20 Volts Drain Current ID 250 mAdc Total Power Dissipation @ TA = 25°C (Note 1.) Derate above 25°C PD 0.8 6.4 Watts mW/ °C Operating and Storage Temperature Range TJ, Tstg –65 to 150 THERMAL CHARACTERISTICS Thermal Resistance – Junction–to–Ambient R θJA 156 °C/W Maximum Temperature for Soldering Purposes Time in Solder Bath TL 260 Sec 1. Device mounted on FR–4 glass epoxy printed circuit using minimum recommended footprint. D G S 250 mA
200 VOLTS
R DS(on) = 14 N–Channel Device Package Shipping
ORDERING INFORMATION
MMFT107T1 SOT–223 1000 Tape & Reel TO–261AA CASE 318E STYLE 3 http://onsemi.com LWW MARKING DIAGRAM FT107 L = Location Code WW = Work Week PIN ASSIGNMENT Preferred devices are recommended choices for future use and best overall value. 321 Gate Drain Source Drain MMFT107T3 SOT–223 4000 Tape & Reel
- Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics
5 V6 V
http://onsemi.com INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.079 2.0 0.15 3.8 0.248 6.3 0.079 2.0 0.059 1.5 0.059 1.5 0.059 1.5 0.091 2.3 0.091 2.3 mm inches SOT-223 POWER DISSIPATION The power dissipation of the SOT-223 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT-223 package, PD can be calculated as follows: PD = TJ(max) – TA R θJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 0.8 watts. PD = 150°C – 25°C = 0.8 watts 156°C/W The 156°C/W for the SOT-223 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 0.8 watts. There are other alternatives to achieving higher power dissipation from the SOT-223 package. One is to increase the area of the collector pad. By increasing the area of the collector pad, the power dissipation can be increased. Although the power dissipation can almost be doubled with this method, area is taken up on the printed circuit board which can defeat the purpose of using surface mount technology. A graph of RθJA versus collector pad area is shown in Figure 9.
0.8 Watts
Figure 9. Thermal Resistance versus Collector or stainless steel with a typical thickness of 0.008 inches.
- Always preheat the device.
- The delta temperature between the preheat and soldering should be 100°C or less.*
- When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C.
- The soldering temperature and time should not exceed 260°C for more than 10 seconds.
- When shifting from preheating to soldering, the maximum temperature gradient should be 5°C or less.
- After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress.
- Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
being used. This profile shows temperature versus time. degrees cooler than the adjacent solder joints.
40 TO 80 SECONDS
Figure 10. Typical Solder Heating Profile
http://onsemi.com PACKAGE DIMENSIONS STYLE 3: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN H S F A B D G L 12 3 0.08 (0003) C M K J DIM A MIN MAX MIN MAX MILLIMETERS 0.249 0.263 6.30 6.70 INCHES B 0.130 0.145 3.30 3.70 C 0.060 0.068 1.50 1.75 D 0.024 0.035 0.60 0.89 F 0.115 0.126 2.90 3.20 G 0.087 0.094 2.20 2.40 H 0.0008 0.0040 0.020 0.100 J 0.009 0.014 0.24 0.35 K 0.060 0.078 1.50 2.00 L 0.033 0.041 0.85 1.05 M 0 10 0 10 S 0.264 0.287 6.70 7.30 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SOT–223 (TO–261) CASE 318E–04 ISSUE K
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