MMFA60R175S6Z MGCHIP | Alldatasheet
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May. 2024. Revision 1.1 1 Magnachip Semiconductor Ltd. Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 0.175 Ω VTH,typ 3.5 V ID 18 A Qg,typ 28.6 nC Order Code Marking Temp. Range Package Packing RoHS Status MMFA60R175S6ZTH A60R175S6Z -55 ~ 150℃ TO-220FA Tube Compliant Features Low power loss by high speed switching and low on-resistance 100% avalanche tested Green package – Pb free plating, Halogen free Zener-integrated Applications PFC power supply stages Switching applications Adapter DC-DC converters MMFA60R175S6Z 600V 0.175Ω N-channel MOSFET Description Superior 6th generation SJ MOSFETs (S6-series) are cutting-edge high voltage power MOSFETs, based on Magnachip’s extensive design expertise and years of experience. The main strengths of S6- series are low on -resistance, low gate charge and reduced tendency for ringing . As a result, its switching loss is very low, making it optimized for switching applications. Moreover, these user friendly devices offer the advantages of improved ruggedness and remarkabl e ESD capability by integrated Zener diode, making it an ideal choice for designers. Key parameters Ordering Information Package & internal circuit G D S
May. 2024. Revision 1.1 2 Magnachip Semiconductor Ltd. Parameter Symbol Rating Unit Note Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±25 V Continuous drain current1) ID
18 A TC=25℃
11 A TC=100℃
Pulsed drain current2) IDM 54 A Power dissipation PD 26 W Single-pulse avalanche energy3) EAS 56 mJ MOSFET dv/dt ruggedness dv/dt 50 V/ns Continuous diode forward current ISD 5.6 A Diode dv/dt ruggedness4) dv/dt 50 V/ns Storage temperature Tstg -55 ~150 ℃ Maximum operating junction temperature Tj 150 ℃ 1) ID limited by maximum junction temperature, Duty cycle D=0.5 2) Pulse width tP limited by Tj,max 3) IAS = 2.3 A 4) ISD ≤ ID, VDS peak ≤ 400V, di/dt ≤ 900A/μs Parameter Symbol Value Unit Thermal resistance, junction-case max RthJC 4.82 ℃/W Thermal resistance, junction-ambient max RthJA 65.3 ℃/W Thermal characteristics Absolute maximum rating (Tc=25℃ unless otherwise specified)
May. 2024. Revision 1.1 3 Magnachip Semiconductor Ltd. Parameter Symbol Min. Typ. Max. Unit Test Condition Drain–source breakdown voltage V(BR)DSS 600 - - V VGS = 0V, ID = 1mA Gate threshold voltage VGS(th) 2.5 3.5 4.5 V VDS = VGS, ID = 250μA Zero gate voltage drain current IDSS - - 1 μA VDS = 600V, VGS = 0V Gate leakage current IGSS - - 10 μA VGS = ±25V, VDS =0V Drain-source on-state resistance RDS(ON) - 0.156 0.175 Ω VGS = 10V, ID = 5.6A Parameter Symbol Min. Typ. Max. Unit Test Condition Input capacitance Ciss - 1547 - pF VDS = 400V, VGS = 0V, f = 250kHz Output capacitance Coss - 29 - Reverse transfer capacitance Crss - 3.9 - Effective output capacitance energy related5) Co(er) - 44 - VDS = 0V to 400V, VGS = 0V, f = 250kHz Effective output capacitance time related6) Co(tr) - 271 - VDS = 0V to 400V, VGS = 0V, f = 250kHz Turn-on delay time td(on) - 28 - ns VGS = 10V, RG = 25Ω, VDD = 300V, ID = 18A Rise time tr - 35 - Turn-off delay time td(off) - 93 - Fall time tf - 5.6 - Total gate charge Qg - 28.6 - nC VGS = 10V, VDD = 400V, ID = 5.6A Gate–source charge Qgs - 7.1 - Gate–drain charge Qgd - 8.9 - Gate resistance RG - 9.2 - Ω VGS = 0V, f = 1MHz 5) Co(er) is a capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400V 6) Co(tr) is a capacitance that gives the same charging time as Coss while VDS is rising from 0 to 400V Static characteristics (Tc=25℃ unless otherwise specified) Dynamic characteristics (Tc=25℃ unless otherwise specified)
May. 2024. Revision 1.1 4 Magnachip Semiconductor Ltd. Parameter Symbol Min. Typ. Max. Unit Test Condition Diode forward voltage VSD - - 1.4 V ISD = 5.6A, VGS = 0V Reverse recovery time trr - 203 - ns ISD = 5.6A di/dt = 100A/μs VDD = 400V Reverse recovery charge Qrr - 1.6 - μC Reverse recovery current Irrm - 16 - A Reverse diode characteristics (Tc=25℃ unless otherwise specified)
May. 2024. Revision 1.1 5 Magnachip Semiconductor Ltd. Characteristic graph Fig.5 Transfer characteristics Fig.6 Diode forward characteristics Fig.1 On-region characteristics. Fig.2 On-resistance variation with drain current Fig.3 On-resistance variation with junction temperature (normalized) Fig.4 Breakdown voltage variation with temperature (normalized) 0 5 10 15 20 ID (A) VDS (V) 6 V 5.5 V 10 V 0.5 1.5 2.5 -60 -30 0 30 60 90 120 150 RDS(ON) (normalized) TJ (˚C) 2 4 6 8 10 ID (A) VGS (V) T=150˚C -55˚C 25˚C 0.1 0.3 0.5 0 5 10 15 20 25 30 35 40 RDS(ON) (Ω) ID (A) VGS=20V VGS=10V 0.7 0.8 0.9 1.1 1.2 1.3 -60 -30 0 30 60 90 120 150 BVDSS (normalized) TJ (˚C) 100 IS (A) VSD (V) 25˚C T=150˚C 6.5 V 8 V 20 V *Notes : VGS=10V, ID=5.6A *Notes : VGS=0V, ID=1mA VGS = 5 V
May. 2024. Revision 1.1 6 Magnachip Semiconductor Ltd. Fig.7 Gate charge characteristics Fig.8 Capacitance Characteristics Fig.9 Threshold voltage variation with junction temperature Fig.10 Drain current Fig.11 Power dissipation variation with pulse time Fig.12 Output capacitance stored energy 1000 2000 3000 4000 5000 6000 7000 10 10 10 10 10 10 PD (W) tP (s) 0 100 200 300 400 500 600 EOSS (µJ) VDS (V) 0.5 1.5 25 50 75 100 125 150 VGS(th) (normalized) TJ (˚C) 0 5 10 15 20 25 30 VGS (V) QG (nC) 0.1 100 1000 10000 0 100 200 300 400 500 C (pF) VDS (V) 25 50 75 100 125 150 ID (A) TC (˚C) 120V 480V Ciss Coss Crss *Notes : ID=5.6A *Notes : VGS=0V, f=250kHz Single Pulse Rthjc = 4.82℃/W TC=25℃ -5 -4 -3 -2 -1 0
May. 2024. Revision 1.1 7 Magnachip Semiconductor Ltd. Fig.13 Transient thermal response Fig.14 Safe operating area 10 10 10 10 10 10 10 10 10 Zthjc (˚C/W) tP (s) 10 10 10 10 10 ID (A) VDS (V) Single Pulse Tj=Max rated TC=25℃ Operation in This Area is Limited by RDS(on) -1 0 1 2 32-6 -5 -4 -3 -2 -1 0 1 * Notes: Duty Factor, D=t1/t2 PEAK Tj-TC=PDM* Zthjc Rthjc = 4.82℃/WSingle Pulse 0.02 0.01 0.1 D=0.5 0.2 0.05 PDM -1-2 10µs 100µs 1ms 10ms 100ms DC
May. 2024. Revision 1.1 8 Magnachip Semiconductor Ltd. Test circuit
May. 2024. Revision 1.1 9 Magnachip Semiconductor Ltd. Physical Dimension TO-220FA (3L) Note : Package body size, length and width do not include mold flash, protrusions and gate burrs.
May. 2024. Revision 1.1 10 Magnachip Semiconductor Ltd. DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. Magnachip reserves the right to change the specifications and circuitry without notice at any time. Magnachip does not consider responsibility for use of any circuitry other than circuitry entirely included in a Ma gnachip product. is a registered trademark of Magna chip Semiconductor Ltd.