MMF5.0A ZSELEC | Alldatasheet

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Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com Ratings and Characteristic Curves TA=25°C unless otherwise noted MMF5.0A/CA-MMF19 0A/CA MMF5.0A/CA-MMF19 0A/CA 100 1000 10000 10 100 1000 C , JUNCTION CAPACITANCE (pF)T V , STANDOFF VOLTAGE (V)WM Fig.2 Typical Total Capacitance T = 2 5°Cj Unidirectional Bidirectional

10 X 1000 Wa

25 50 75 100 125 150 175 200 100 T , AMBIENT TEMPERATURE (°C)A Fig.

1 Pulse Derating Curve

PULSE DERATING IN % OF PEAK POWER OR CURRENT 2 3 100 I , PEAK PULSE CURRENT (%I )Pp p Peak Value Ipp Half Value I /2pp X 1000 Waveform as defined by R.E.A. tp TIME (ms) Fig. 4 Pulse Waveform 0.1 1.0 0.1 100 1.0 1000 10000 2 5°Cj P , PEAK PULSE POWER (kW)d 100 Non Repetitive Pulse Waveform S h o w ni nF i g .4 0.0 0.2 0.4 0.6 5 50 75 100 125 150 175 200 PM STEADY STATE POWER DISSIPATION (W)(A V), T , LEAD TEMPERATURE (°C)L Fig.

6 Steady State Power Deratin g Curve

0.8 1.0 60Hz Resistive or Inductive Load 2 5 10 PEAK FORWARD SURGE CURRENT, (A) NUMBER OF CYCLES AT 60Hz Fig. 5 Maximum Non-Repetitive Surge Current 20 50 1001 Pulse Width 8.3ms Single Half-Sine-Wave (JEDEC METHOD)

@ Ta=25°C 3 of 4 Notes: 1. Suffix C denotes Bi-directional device. VBR measured with IT current pulse = 300/c109s 3. For Bi-Directional devices havingVRWM of 10V and under, the IR is doubled. Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com El ectrical Specification ※ For Bi-d irectional type having VRWM of 10 Volts and less, the IR limit is double MMF MMF MMF MMF MMF MMF MMF MMF MMF MMF MMF MMF MMF MMF MMF MMF MMF MMF MMF MMF MMF MMF MMF MMF MMF MMF MMF MMF MMF MMF MMF MMF MMF MMF MMF MMF MMF MMF5.0A/CA-MMF19 0A/CA MMF5.0A/CA-MMF19 0A/CA Ty pe Number Marking Reverse Stand-Off Voltage Breakdown Voltage Min. @IT Bre akdown Voltage Max. @ IT T est Current Clamping Voltage Peak Pulse Current Reverse Leakage @VRMW Uni Bi Uni Bi V RMW(V) V BR MIN(V) V BR M AX(V) I T (m A) VC(V) IPP(A ) IR(u

@ Ta=25°C 4 of 4 Notes: 1. Suffix C denotes Bi-directional device. VBR measured with IT current pulse = 300/c109s 3. For Bi-Directional devices havingVRWM of 10V and under, the IR is doubled. Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com El ectrical Specification ※ For Bi-d irectional type having VRWM of 10 Volts and less, the IR limit is double Ty pe Number Marking Reverse Stand-Off Voltage Breakdown Voltage Min. @IT Bre akdown Voltage Max. @ IT T est Current Maximum Clamping Voltage @IPP Peak Pu lse Current Reverse Leakage @VRMW Uni Bi Uni Bi V RMW(V) V BR MIN(V) V BR M AX(V) I T (m A) VC(V) IPP(A ) IR(u MMF MMF MMF MMF MMF MMF MMF MMF MMF MMF MMF MMF5.0A/CA-MMF19 0A/CA MMF5.0A/CA-MMF19 0A/CA